16L8 JEDEC FUSE Search Results

Contextual Info: Philips Semiconductors Programmable Logic Devices Product specification PAL devices 16L8,16R8,16R6,16R4 PLUS16R8D/-7 SERIES FEATURES DESCRIPTION • Ultra high-speed The Philips Semiconductors PLUS16XX family consists of ultra high-speed 7.5ns and 10ns versions of Series 20 PAL devices.

PAL16L8 programming specifications

Abstract: conversion software jedec lattice GAL16V8 emulate GAL20RA10 GAL20V8 GAL22V10 PAL16L8 RAL16L8 16l8 JEDEC fuse
Contextual Info: Copying PAL, EPLD & PEEL Patterns Into GAL Devices the GAL16V8 or GAL20V8 data sheets . The programmer will automatically configure the GAL device to emulate the PAL device during programming. The resulting GAL device is 100% compatible with the original PAL device.

PAL16L8 programming specifications

Abstract: GAL16V8 PAL16L8 Pal programming 22v10 emulate gal16v8 programming 16L8 GAL20RA10 GAL20V8 GAL22V10
Contextual Info: Copying PAL, EPLD & PEEL Patterns Into GAL Devices INTRODUCTION The generic/universal architectures of Lattice Semiconductor Corporation LSC GAL devices are able to emulate a wide variety of PAL, EPLD and PEEL devices. GAL devices are direct functional and parametric

16l8 JEDEC fuse

Abstract: GAL16V8 gal16v8 programming GAL EQUIVALENT OF PAL emulate 16L8 GAL RAL16L8 16L8* GAL gal programmer GAL20RA10
Contextual Info: Copying PAL, EPLD and PEEL Patterns Into GAL Devices the GAL16V8 or GAL20V8 data sheets . The programmer will automatically configure the GAL device to emulate the PAL device during programming. The resulting GAL device is 100% compatible with the original PAL device.

AMD 16L8

Abstract: application PAL 16l8 16L8 PLUS16L8 16R4 16l8 JEDEC fuse 16R4 programming specification 16R6 16R8 PLUS16R8
Contextual Info: Philips Semiconductors Programmable Logic Devices Product specification PAL devices 16L8, 16R8, 16R6, 16R4 PLUS16R8D/-7 SERIES FEATURES DESCRIPTION • Ultra high-speed The Philips Semiconductors PLUS16XX family consists of ultra high-speed 7.5ns and 10ns versions of Series 20 PAL devices.

PAL16l8A MMI

Abstract: mmi 16L8 PAL16L8B mmi PAL16L8B PLHS16L8 ampal16l8b plhs16l8b AmPAL16L8A PLHS16L8A PAL16L8A
Contextual Info: Philips C o m p o n e n ts Data sheet status Product specification date o1 Issue October 1 6 ,1 9 8 9 PLHS16L8A/B Programmable AND array logic 16x64x8 Program m able Logic Devices DESCRIPTION The PLHS16L8A is a high-speed “A’ version, and the PLHS16L8B is a very

Contextual Info: FINAL COM’L: -4/5/7/B/B-2/A, D/2 Zi Advanced Micro Devices PAL16R8 Family 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 4.5 ns maximum propagation delay ■ Power-up reset for initialization ■ Popular 20-pin architectures: 16L8,16R8,16R6,

GAL16VB

Abstract: National SEMICONDUCTOR GAL16V8 GAL16V8 application notes GAL16v8 algorithm
Contextual Info: GAL16V8 National Semiconductor GAL16V8 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

icc r1390

Contextual Info: ATF16V8B Features • Industry Standard Architecture Emulates Many 20-Pin PALs Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device ATF16V8B

P16V8S

Abstract: ispGAL16Z8 G16V8S
Contextual Info: Lattice* ispGALI 6Z8 Semiconductor Corporation In-System Programmable High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • IN-SYSTEM-PROGRAMMABLE — 5-VOLT ONLY — Change Logic "On The Fly" In Seconds — Non-volatile EJ Technology • MINIMUM 10,000 ERASE/WRITE CYCLES

Contextual Info: Lattice GAL16V8C High Performance E2CMOS PLD Generic Array Logic •■■■ FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE ElCMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 125 MHz — 4 ns Maximum from Clock Input to Data Output

gal 16v8 programming specification

Abstract: gal 16v8 programming algorithm National SEMICONDUCTOR GAL16V8 gal16v8 programming algorithm gal16v8 national GAL16V8-25 GAL16V8-20 application GAL 16l8 gal programming gal16v8
Contextual Info: GAL16V8/A 03 National Semiconductor GAL16V8/A 20-Pin Generic Array Logic Family General Description Features The EECMOS GAL 16V8/A devices are fabricated using electrically erasable floating gate technology. This program­ mable memory technology applied to array logic provides

Contextual Info: Lattice G A L16LV8C Low Voltage E2CMOS PLD Generic Array Logic S em ico n d u cto r • ■ ■ ■ ■ ■ C orporation FEATURES FUNCTIONAL BLOCK DIAGRAM • 3.3V LOW VOLTAGE — Interfaces with Standard 5V TTL Devices — 45mA Typical Active Current 65mA Max.

Contextual Info: •■■ ■■■ Lattice FEATURES GAL16V8C High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maxim um Propagation Delay — Fmax = 1 6 6 MHz — 4 ns Maxim um from Clock Input to Data Output

ats 2300

Abstract: A23S8
Contextual Info: GA23SV8/GA23S8 gazelle High-Perform ance Logic Device Gallium Arsenide _ Features G eneral Description G azelle’s GA23SV8/GA23S8 are TTL-compatible high-perform­ ance logic sequencers. Based on the fam iliar programmable array logic architecture, they provide highest performance and

application PAL 16v8

Abstract: 16v8 application PAL 16l8 AMD 16V8 PAL10L8 PAL12H6 PAL12L6 PAL14H4 PAL14L4 PAL16L8
Contextual Info: Converting Bipolar PLD Designs to CMOS Advanced Micro Devices The world learned about programmable logic through the use of bipolar PLDs. As PAL device designs proliferated, bipolar fuse technology was the only productionworthy vehicle for implementing the programming

Contextual Info: GAL16V8A-10, -12, -15, -20 National Semiconductor GAL16V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

TCO - 909

Contextual Info: GAL16LV8 Lattice Low Voltage E2CMOS PLD Generic Array Logic Semiconductor Corporation • HIGH PERFORMANCE E2CMOS TECHNOLO G\ — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology

Contextual Info: Lattice G A L 1 6 L V 8 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from C lock Input to Data Output

Harris fusing procedure

Abstract: T16M
Contextual Info: 3 HARRIS H P L-77317/ 16L D 8 H P L -77318/ 16H D 8 Preliminary TM HPL H arris P r o g ra m m a b le L o g ic Features • LO G IC PATHS TE STED TO INSU RE F U N C T IO N A L IT Y • R E D U C TIO N OF IC IN V E N TO R IE S • FAST ACCESS IN P U T TO O UTPUT)

GAL16V8B-25QJI

Contextual Info: •■ ■■ Lattice FEATURES GAL16V8B High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E’CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax =100 MHz — 5 ns Maximum from Clock Input to Data Output

Contextual Info: H iL a ttic e g a l ig l v s d i ! : : : : Semiconductor •■■■■■ Corporation Hi9h Performance E2CMOS PLD Generic Array Logic FEATURES • HIGH PERFORMANCE E’ CMOS TECHNOLOGY — 3.5 ns Maxim um Propagation Delay — Fmax = 250 MHz — 2.5 ns Maxim um from Clock Input to Data Output

Contextual Info: Lattice GAL16LV8 Low Voltage E2CMOS PLD Generic Array Logic ; ; Semiconductor •■ Corporation HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 2.5 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology

16l8 JEDEC fuse

Abstract: DIN153 Programmable Logic Array PLUS153-10N PLUS153 16L8 PLUS153-10A
Contextual Info: Philips Semiconductors Programmable Logic Devices Product specification Programmable logic array 18 x 42 × 10 DESCRIPTION PLUS153–10 FEATURES The PLUS153–10 PLD is a high speed, combinatorial Programmable Logic Array. The Philips Semiconductors state-of-the-art