16GHZ Search Results

Contextual Info: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)

Contextual Info: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p

4304

Abstract: P35-4304-000-200 NN12
Contextual Info: Data sheet 6 Bit Digital Attenuator, 0.5 - 16GHz The P35-4304-000-200 is a high performance Gallium Arsenide monolithic 6 bit digital attenuator offering an attenuation range of 31.5dB in 0.5dB steps. It is suitable for use in broadband communications, instrumentation and

Contextual Info: CPH6020 Ordering number : ENA1548 SANYO Semiconductors DATA SHEET CPH6020 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

AN0005

Abstract: CHA2066RBF RO4003
Contextual Info: CHA2066RBF 10-16GHz Self biased Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a two-stage self biased wide band monolithic low noise amplifier. • Broad band performance: 10-16GHz

marking code IC .ftf

Abstract: BFR340T GPS05996
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Target Data • • • • Low Voltage/ Low Current Operation High Transistion Frequency of 16GHz High Insertion Gain Ideal for Low Current and Amplifiers and Oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,

HN3C18F

Abstract: E33 marking
Contextual Info: TOSHIBA HN3C18F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 18 F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5317F

Contextual Info: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1

2SC5320

Contextual Info: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)

IC 6693

Abstract: CHA3666-SNF c 2026 amplifier CHA3666 4468 8 pin Assembly ic
Contextual Info: CHA3666-SNF RoHS COMPLIANT 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHT4016

Abstract: CHT4016-99F
Contextual Info: CHT4016 RoHS COMPLIANT 4-16GHz 6-BIT DIGITAL ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4016 is a 4-16GHz 6-bit digital attenuator designed to address a dynamic of 31.5dB by 0.5dB step. This device is manufactured on pHEMT 0.25µm process, including via holes

Contextual Info: Coaxial Bandpass Filter 50Ω VBFZ-780+ 710 to 850 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Input* 7W at 25°C *Passband rating, derate linearly to 3W at 100°C ambient. • Good Rejection, 30dB up to 16GHz

4304

Abstract: NN12 P35-4304-000-200
Contextual Info: P35-4304-000-200 6 BIT DIGITAL ATTENUATOR, 0.5 - 16GHz Features • • • • • Broadband 0.5 - 16GHz Low insertion loss; 4dB typ at 8GHz Attenuation 0.5dB steps to 31.5dB Fast switching speed Through GaAs vias for improved performance Description The P35-4304-000-200 is a high performance Gallium Arsenide monolithic 6 bit digital attenuator

NN12

Abstract: P35-4307-000-200 MARCONI power
Contextual Info: P35 P35-4307-000-200 5 BIT DIGITAL ATTENUATOR DC - 16GHz Features • • • • • Broadband DC - 16GHz Low insertion loss; 3dB typ at 8GHz Attenuation 0.5dB steps to 15.5dB Fast switching speed Through GaAs vias for improved performance Description The P35-4307-000-200 is a high performance broadband Gallium Arsenide monolithic 5 bit digital attenuator

DC1013

Contextual Info: RFRX5933A RFRX5933A 10GHz to 16GHz Downconverter 10GHz TO 16GHz DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mm GND LOIN GND N/C Vd1 N/C 32 Features  Integrated LNA, Image Rejection Mixer, LO Buffer Amplifier 2.0dB NF  13dB Conversion Gain   25dBc Image Frequency

Contextual Info: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features           RF Frequency: 12GHz 16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB

transistor A1281

Abstract: a1281 TRANSISTOR equivalent A1281 TRANSISTOR A1281 A1281(327) IT139 CBC 337 MCH4021 PS 9829 608-113
Contextual Info: MCH4021 Ordering number : ENA1281 SANYO Semiconductors DATA SHEET MCH4021 NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier Features • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

a1601

Contextual Info: MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

Contextual Info: JXWBLB-T-BP-16000-2000-9CSMF 16GHz Cavity Band Pass Filter Test report is for reference only. TEST REPORT For JXWBLB-T-BP-16000-2000-9CSMF 1 JXWBLB-T-BP-16000-2000-9CSMF 16GHz Cavity Band Pass Filter Technical Specification Center Frequency[f0] GHz 16 1dB Bandwidth(GHz)

Contextual Info: TOSHIBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2 l e|2= 9.0dB (f=2GHz) 2.1 +0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Double Balanced Mixers B90V 9 to 16GHz Specifications RF Frequency LO Frequency LO Power 9 to 16GHz 10 to 17GHz 16 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

Contextual Info: Double Balanced Mixers B90A 9 to 16GHz Specifications RF Frequency LO Frequency LO Power 9 to 16GHz 10 to 17GHz 13 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

Contextual Info: Double Balanced Mixers B90H 9 to 16GHz Specifications RF Frequency LO Frequency LO Power 9 to 16GHz 10 to 17GHz 7 dBm typ Transfer Characteristics Conversion Loss IF Frequency LO to RF Isolation LO to IF Isolation IP3 In P1dB In Available Package Styles Available Package Styles

Contextual Info: AMMP-6421 13-16 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6421 MMIC is a 1W power amplifier in a surface mount package designed for use in transmitters that operate at frequencies between 13GHz and 16GHz. Between 13GHz and 16GHz, it provides 29 dBm