16FEB09 Search Results

EIA-364-05

Abstract: EIA-364-29 EIA-364-65 aisi EIA-TS-364-1000 240 pin DIMM DDR3 through hole EIA-364-52 DDR3 socket Qualification Test Report ddr3 connector EIA EIA-364-13 DIMM
Contextual Info: Product Specification 108-2214 16Feb09 Rev C Fully Buffered and DDR3 DIMM Soldertail Sockets 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics Fully Buffered and DDR3 Dual In-Line Mem ory Module DIMM Soldertail Socket.

BLY65

Abstract: EIA-364-29 BLY12 EIA-364-29B
Contextual Info: 502-1257 Engineering Report 16Feb09 Rev A Contact Retention Testing of Medical CPC Subassemblies 1. INTRODUCTION 1.1. Purpose Testing was perform ed on Tyco Electronics Medical Circular Plastic Connector CPC plug and receptacle subassem blies to determ ine the effects of soldering heat on contact retention.

EIA-364-13

Abstract: EIA-364-20 EIA-364-21 EIA-364-27 EIA-364-28 EIA-364-52 EIA-364-18
Contextual Info: Product Specification 108-2246 16Feb09 Rev C 1.0 mm Mezzanine Connectors 1. SCOPE 1.1. Content This specification covers perform ance, tests and quality requirem ents for the Tyco Electronics 1.0 m m Mezzanine Connectors. 1.2. Qualification W hen tests are perform ed on the subject product line, procedures specified in Figure 1 shall be used.

Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

si7272

Contextual Info: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized

3.96 Card Edge Connectors

Contextual Info: EBT156 Vishay Dale Edgeboard Connectors, Single Readout, Dip Solder, Eyelet and Wire Wrap Termination FEATURES • 0.156" 3.96 mm C-C • Modified tuning fork contacts have chamfered lead-in to reduce wear on printed circuit board contacts without sacrificing contact pressure and wiping action

Si7489DP

Abstract: Si7489DP-T1-E3 Si7489DP-T1-GE3
Contextual Info: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7852DP

Abstract: Si7852DP-T1-E3
Contextual Info: Si7852DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 12.5 0.022 at VGS = 6 V 10.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Si7456DP-T1-E3

Abstract: Si7456DP Si7456DP-T1-GE3
Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC

0116 transformer

Abstract: IRLI630G SiHLI630G SiHLI630G-E3 16-FEB-09 IRLI630
Contextual Info: IRLI630G, SiHLI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5V

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: FOR 1.25MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 85°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL

Contextual Info: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7998DP-T1-GE3

Abstract: si7998dp si7998
Contextual Info: New Product Si7998DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 0.0053 at VGS = 10 V 30 0.007 at VGS = 4.5 V 30 VDS (V) Channel-1 30 Channel-2 30 Qg (Typ.)

Si7445DP-T1-E3

Contextual Info: Si7445DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0077 at VGS = - 4.5 V - 19 0.0094 at VGS = - 2.5 V - 17 0.0125 at VGS = - 1.8 V - 15 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

PowerPAK

Contextual Info: Si7459DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) - 30 0.0068 at VGS = - 10 V - 22 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7448DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0065 at VGS = 4.5 V 22 0.009 at VGS = 2.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

24V DC motor speed control

Abstract: TMC603 schematic pwm AC "motor control" mosfet motor dc 48v pc based dc motor control using chopper AC Motor Speed Controller TMC603EVAL bldc motor for 48v "Common rail" PWM push button switch
Contextual Info: TMC603EVAL – MANUAL Evaluation board for the TMC603 three phase motor driver with BLDC back EMF commutation hallFX TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features The TMC603 evaluation board makes it possible to evaluate the features of the TMC603 three phase

Si7483ADP

Abstract: SI7483ADP-T1-E3 SI7483ADP-T1-GE3
Contextual Info: Si7483ADP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0057 at VGS = - 10 V - 24 0.0095 at VGS = - 4.5 V - 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Si7491DP

Abstract: Si7491DP-T1-E3
Contextual Info: Si7491DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0085 at VGS = - 10 V - 18 0.013 at VGS = - 4.5 V - 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®

Si7452DP

Abstract: Si7452DP-T1-E3
Contextual Info: Si7452DP Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.0083 at VGS = 10 V 19.3 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

si7940dp-t1-ge3

Abstract: Si7940DP
Contextual Info: Si7940DP Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.017 at VGS = 4.5 V 11.8 0.025 at VGS = 2.5 V 9.8 APPLICATIONS PowerPAK SO-8 S1 6.15 mm • Point-of-Load Synchronous Rectifier - 5 V or 3.3 V BUS Step Down

TLHB5800

Contextual Info: TLHB5800 Vishay Semiconductors High Efficiency Blue LED, ∅ 5 mm Untinted Non - Diffused Package FEATURES • • • • • • • • 19223 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.

Si7983DP

Abstract: Si7983DP-T1-E3 GS 1,2 12
Contextual Info: Si7983DP Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 12 0.020 at VGS = - 2.5 V - 11 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available

c 8188-2

Abstract: DIODE MARKING 9X LLP2513-11L
Contextual Info: VBUS054CD-FHI Vishay Semiconductors 4-Line BUS-Port ESD-Protection - Flow Through Design Features • • • • • • • • • • • Compact LLP2513-11L package Low package height < 0.6 mm 4-line ESD-protection Low leakage current IR < 0.1 µA Low load capacitance CD = 0.8 pF