168PIN DIMM 32MB Search Results

M366S0924CTS-C7A

Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Single Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C7A(Intel SPD 1.2B ver. base) • Organization : 4Mx64

K4S281632B-TC75

Abstract: K4S640832D-TC75 M366S1623DT0-C7A K4S280832A-TC75
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Double Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0824DT0-C7A(Intel SPD 1.2B ver. base) • Organization : 8Mx64

K4S641632d-TC80

Abstract: samsung date code 64Mb samsung SDRAM
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4

m366s1723cts-c75

Abstract: M366S1723BTS K4S641632 M366S0924CTS-C75 M366S1723ATS K4S640832D-TC75 M374S0823DTS-C75 K4S280832A-TC75
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Single Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 1.3 March. 2000 REV. 1.3 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C75(Intel SPD 1.2B ver. base) ¡Ü ¡Ü ¡Ü

K4S560832A

Abstract: K4S560832B K4S640832D-TC75 K4S641632C-TC75 M366S1623DT0-C75 K4S280832C-TC75 m374s6453bt0-c75 K4S280832A-TC75 K4S281632B-TC75
Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Double Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 1.3 March. 2000 REV. 1.3 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0824CT0-C75(Intel SPD 1.2B ver. base) ¡Ü ¡Ü ¡Ü

DIMM 1999

Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CT0-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4

Contextual Info: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Unbuffered SDRAM DIMM 168pin SPD Specification REV. 1.3 March. 2000 REV. 1.3 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C75(Intel SPD 1.2B ver. base) ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü

k4s641632d-tc80

Abstract: samsung date code sAMSUNG PC100-322-620
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0824DT0-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü

Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü

Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CTS-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü

KM416S8030BT

Abstract: sAMSUNG PC100-322-620
Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered SDRAM DIMM 168pin 6 Layer SPD Specification Rev. 0.0 November 1999 Rev. 0.0 Nov. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM • Revision History [Revision 0.0] November 18, 1999 Merged PC100 SDRAM 6 Layer Unbuffered DIMMs based 64SD D-die, 128SD M/A/B-die, 256SD A-die.

A1-A10

Contextual Info: ADVANCE MT36LD872 X 8 MEG x 72 DRAM MODULE TECHNOLOGY, INC. DRAM MODULE 8 MEG x 72 64 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard ECC pinout in a 168pin, dual-in-line memory module (DIMM)

HY57V168

Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
Contextual Info: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG

Contextual Info: 168PIN PC66 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V1PN Description Placement The TS4MLS64V1PN is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-66. The TS4MLS64V1PN consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V8P Description Placement The TS4MLS64V8P is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS4MLS64V8P consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 32MB 168PIN PC66 SDRAM DIMM With 2M X 8 3.3VOLT TS4MLS64V1P2N Description Placement The TS4MLS64V1P2N is a 4M bit x 64 Synchronous Dynamic RAM, high density for PC-66. The TS4MLS64V1P2N consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 168PIN PC100 Unbuffered DIMM 64MB With 4Mx16 CL3 TS8MLS64V8Z Description Placement The TS8MLS64V8Z is a 8M bit x 64 Synchronous Dynamic RAM high density for PC-100. The TS8MLS64V8Z consists of 8pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and a

Contextual Info: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

hynix and bcd

Abstract: sdram hynix
Contextual Info: 8Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M635HG L T6 Series DESCRIPTION The Hynix HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

p2808

Contextual Info: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series Preliminary DESCRIPTION The Hyundai HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

HYNIX process code

Abstract: S08H hynix internal process code hynix module internal process code hym76v8m655hgt sdram dimm module hynix so 128 144
Contextual Info: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M655HG L T6 Series DESCRIPTION The Hynix HYM71V8M655HG(L)T6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series DESCRIPTION The Hynix HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series Preliminary DESCRIPTION The Hyundai HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy