16778 Search Results

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA <DISCRETE/OPTO fä h ih a 99D 16778 D"T:'3>9-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA flV M O SE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS

Contextual Info: Housing - HC-B 16-SMLD-84/O2PG29 - 1677898 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: DO NOT SCALE DATE SYM RE VISION RECORD AUTH DR CK 18MY95 A RELEASED 950005 HBT MVA 05SE95 Al REVISED 167788 AMV MVA id VVW N > PED _. z 1 1o Û H< cr o °C L O cr cr­ oi uo II_ U ì tr. o oír lu_2< S _l_. OLU |\ y \ \ UUU'ü'u^ 6 5 4 V w h it UJÍ o! cr

Contextual Info: Extract from the online catalog HC-B 10-TFQ-72/O1PG29S Order No.: 1677801 Sleeve housing, for double locking latch, height: 72 mm, with supports, 1 x Pg29, lateral cable outlet

Contextual Info: Housing - HC-B 16-SMLD-84/O1PG29 - 1677885 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: Housing - HC-B 16-SML-84/O1PG21 - 1677869 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: Extract from the online catalog HC-B 16-SML-84/O1PG29 Order No.: 1677843 Box mounting base, with single locking latch, height 84 mm, with a support 1x PG29 Product notes WEEE/RoHS-compliant since:

Contextual Info: Housing - HC-B 10-TFQ-72/O1PG29S - 1677801 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

006F2

Contextual Info: Ti mT| TO^aSD TOSHIBA {DISCRETE/OPTO} C D I S C R E T E /OPTO 99 D D -T='3>9-I3 TOSHIBA FIELD EFFECT TRANSISTOR YTF 1 5 3 SILIC O N N CHANNEL MOS TYPE ff-M O S H ) TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

Contextual Info: SHEET 1 OF 1 A B C D 1 2 3 4 5 6 7 8 9 10 11 12 CONTACT CONFIGURATION TIMING BBM NON-SHORTING n26.00 [1.024 in] 14.20 [.559 in] HARDWARE SUPPIED ON SWITCH 17.30 [.681 in] 2.00 [.079 in] 8.00 [.315 in] 30.00 `.50 [1.181 `.020 in] n6.00 [.236 in] .5 n ] 27 83 i

Contextual Info: FINAL A M D ii Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

Contextual Info: FINAL AMD£I Am28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V High performance — Access tim es as fast as 70 ns * — 5 seconds typical chip erase, including

16778

Abstract: UM0861
Contextual Info: UM0861 User manual Adapter board for single and double axis gyroscopes in a 5x5 mm package Introduction This document applies to all adapter boards related to ST MEMS single and double axis gyroscopes in 5 x 5 mm packages, hereafter referred to as “STEVAL-MKI0xxV1”.

Contextual Info: th July 25 , 2012 Automotive Grade AUIRS4427S DUAL LOW SIDE DRIVER Features • • • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs 3.3V and 5V logic compatible Two independent gate drivers Matched propagation delay for both channels

cfl light circuit diagram

Abstract: cfl circuit diagram dimmable cfl ccf lamp circuit diagram lamp failure detection cfl preheat circuit diagram of automatic mains failure CFL lamp UBA2024P SO20l Package
Contextual Info: NXP Driver ICs for CFL/HF-TL applications Optimize the cost, size, and efficiency of fluorescent lighting NXP’s driver ICs save space, increase efficiency, and lower the overall cost of standard, long-life, and dimmable fluorescent lighting. Designed for applications in the range of 5 to 25 W, these advanced

TERMI-POINT AMP

Abstract: 2303481 amp edge connector
Contextual Info: AMP EDGE AMP EDGE AMP EDGE „Low Profile" AMP EDGE “Low Profile” zum Einloten in Leiterplattten for Board-to-Board Applications Polzahlen: Vergoldete Kontakte max. 85polig 170 Kontakte Number of Positions: Gold plated Contact Area 85 position max. (170 contacts)

UES2603R

Abstract: UES2602R UFR-14 1N6707
Contextual Info: Ultra Fast Rectifiers Part Number |lip lÊ siîil:•11£S 1N6707R UFT2080 PPR1310 UES701 UES701R PPR1311 UES702 UES702R PPR1312 UES703 UES703R UES2601 UES2601R UES3005C UES3005S UFR3005 UFR3005PF UFR3005R UF3010 UES2602 UES2602R UES3010C UES3010S UFR3010

aff11

Contextual Info: 1 1234567895ABC5DEF55 5 55 5 1 1 225245 5 8585 12345625 A 5 2234563781 9A6B17B21 CDB271 EF19AAA1 233271 9A6B17BD1 CDB271 FA151CDB71 723A3221 9A612B71 CDB21 4A1 !A1 1 2!C23456728

797h

Contextual Info: 9  E%! 58789D 49A9 48F5A F 5B- 233E1$%$%' 256 &+ 3D&%%@ 29  9 7 C   45C75 B  9 E 9C5 CA9A7 9!!D789A7C "7A B5#5875C BF 1$%% A &%%% ' ) E7A9 D5 B 4*+ 4* 9 FDA789BB75B 9F!D775B

str w 6252

Abstract: str 6668 str f 6706 TERMI-POINT AMP
Contextual Info: jK Catalog 82005 Printed Circuit Connectors Revised 7-95 TERMI-TWIST Connectors Features • Locking shoulders firmly secure contact in housing ■ Adaptability of connectors to the automatic AMP M-TACT Wiring Head assures greatest economy and production efficiency.

Contextual Info: a Am 28 F 010 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access time

OA95

Abstract: 28F010A
Contextual Info: F IN A L a A m 28F 010A 131,072 x 8-Bit CMOS Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time ■ CMOS low pow er consum ption - 30 m A m aximum active current - 100 mA m aximum standby current