166FT Search Results

Contextual Info: mosaic 512Kx 32 SRAM MODULE semiconductor, inc. SYS32512ZK/LK - 020/025/30/35 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS32512ZK/LK is plastic 16Mbit Static RAM Module housed in a 72 pin plastic SIMM, ZIP

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial) - 20/25/35/45/55ns (Military) Data Retention with 2.0V Supply, 10 nA Typical

Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Low Power operation (Commercial) - 715 mW Active -10/12 - 550 mW Active - 15/20/25

TI07

Abstract: um61256fs 15 UM61256Fs TAG 203-500
Contextual Info: ADE-203-500 Z HB66D6464BA Series 32k x 64-bit Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Prelimimary Rev. 0.0 HITACHI D ecem ber 29, 1995 Description The HB66D6464BA has been developed as an optimized • Internal input registers (address, data, control)

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS j j - FEATURES • Full CMOS, 6T Cell ■ Single 5V+10% Power Supply ■ High Speed (Equal Access and Cycle Times)

A7153

Contextual Info: P E R F O R MA N C E SEMI CONDUCTOR 50E D • TOhEST? 0001230 P3C3164 SUPER FAST 8K X 8 STATIC CMOS RAMS SCRAMS 3 ■ PIRHLBIMIBMA1V ^ _ ■ 2$ - FEATURES ■ Single 3.3V + 0.2V Pow er Supply fo r High Speed w ith Low Noise and Low Pow er Dissipation ■

Contextual Info: mosaic 128Kx B SRAM MSM8128X-020/25/35 semiconductor, inc. Issue 4 .2 : June 1996 Description 131,072 x 8 CMOS High Speed Static RAM Features The MSM8128X is a 1Mbit monolithic SRAM organised as 128K X 8 with access times of 20ns to 35ns. This is available in 2 ceramic

OC37

Contextual Info: P relim in ary HB66D6464BB Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Mode Selectable, Single Cycle Disable and Pipelined Data Output H ITA CH I So0,0,«* D e sc rip tio n The H B 6 6D 646 4B B has been developed as an optim ized cache m em o ry solution for 8 Bytes

sem 2105

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E J> • 70^55^7 OOOOt.51 2 ■ T -V 6 -3 M O P4C1982/P4C1982L, P4C1981 /P4C1981L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS A -

Contextual Info: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports ■ High Speed Equal Access and Cycle Times - 12/15/20/25ns (Commercial) - 20/25/35ns (P4C168 Military) Three Options - P4C168 Low Power Standby Mode

Contextual Info: P3C1256 HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.3V Power Supply High Speed Equal Access and Cycle Times — 12/15/20/25 ns (Commercial) — 15/20/25 ns (Industrial) Low Power — 360 mW Active Single 3.3 Volts ±0.3Volts Power Supply

15811

Abstract: lz 53s 158111
Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D TGbEST? OOG154b 7 P3G3198/P3C3198L SUPER FAST 16Kx 4 STATIC CMOS RAMS SCRAMS P R E L IM IN A R Y T - U - H - i o FEATURES • Full CMOS, 6T Cell ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation

t523

Abstract: DD01 P4C148 P4C149 433 M SDE Contactor
Contextual Info: PERFORMANCE SEMICONDUCTOR 50E D • 7GbBSt17 OOGlTTb 7 4 3 « P S C P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES ■ Two Options - P4C148 Low Power Standby Mode -P4C149 Fast Chip Select Control ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)

Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM x i- FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts ±10% Power Supply