16403HG Search Results

Contextual Info: HY51 V S 16403HG(HGL) 4Mx4, 3.3V, 4KRef, EDO DESCRIPTION T h e H Y 5 1 V (S )1 6 4 0 3 H G /H G L is the new generation dynam ic R A M organized 4 ,1 9 4 ,3 0 4 words x 4bit. H Y 5 1 V (S )1 6 4 0 3 H G /H G L has realized higher density, higher perform ance and various functions by utiliz­

HY51V16403HG

Contextual Info: HY51V S 16403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)16403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)16403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16403HG/HGL offers Extended Data Out PageMode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)16403HG/HGL to be

Contextual Info: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns

edo ram 4Mx16

Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP