16160 Search Results

HY51VS

Contextual Info: HY51V S 16160HG/HGL 1M x 16Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)16160HG/HGL is the new generation dynamic RAM organized 1,048,576 words x 16bit. HY51V(S)16160HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16160HG/HGL offers Fast Page Mode as a high

Contextual Info: VISHAY IE51, 1.9 mm, Gull Wing CA Vishay Semiconductors IE51, 1.9 mm, Gull Wing (CA) Package Dimensions in mm 16160 Document Number 83960 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE51, 1.9 mm, Gull Wing (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement

PD54

Abstract: 83981
Contextual Info: VISHAY PD54, 1.9 mm, Gull Wing CA Vishay Semiconductors PD54, 1.9 mm, Gull Wing (CA) Package Dimensions in mm 16160 Document Number 83981 Rev. 1.1, 03-Jun-04 www.vishay.com 1 PD54, 1.9 mm, Gull Wing (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

Contextual Info: 16160 160 x 160dots 1/160 Duty STN LED Backlight • ELECTRICAL CHARACTERISTICS ■ MECHANICAL DATA Module Size 87. XW x 87.0(H) x 10.3(T) mm View Area 62.0(W) x 62.0(H) mm Dot Size 0 3 4 x 0 .3 4 mm Dot Pitch 038 x 038 mm Standard Value Symbol Min for Logic

Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The

Contextual Info: Current Transducer LA 25-NP/SP7 For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit and the secondary circuit. IPN = 2.5 A 16160 Features Electrical data Primary nominal current rms Primary current, measuring range

Contextual Info: 16160C 16160CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16160C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > .050" C enterline > Product Feature Selector > Product Details 161601-2 Product Details

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V(S)16160B/BL has realized higher density, higher performance and various functions by utilizing a d v an ced CM OS pr oc e s s t e c hnol ogy. The

NEC 4216160

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ /¡¿ P D 42S 16160, 16160, 42S 18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e /1 P D 4 2 S 1 6 1 6 0 ,4 21 6160, 4 2 S 1 8 1 6 0 ,4 2 1 8 1 6 0 a re 1,048, 576 w o rds by 16 b its C M O S d y n a m ic RA M s. T he

X633

Abstract: MTG-16160A LCM 5v 182 EL DRIVER X033H
Contextual Info: MTG-16160A GENERAL SPECIFICATION Item INTERFACE PIN ASSIGNMENT Content Pin No. Pin Out Function Description Number of Character 160x160 Module Size 69.0 W x70.5(H)x6.2(D)mm Max Viewing Area 63.4(W)x63.3(H)mm Dot Size/Dot Pitch 0.33(W)x0.33(H)mm/0.35(W)x0.35(H)mm

Contextual Info: 16160C 16160CL Semicon Co. .Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71V S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM 71V(S) 16160C/CL has realized higher density, higher performance and various

Contextual Info: 16160C 16160CL Semicon Co. .Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71C S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM 71C(S) 16160C/CL has realized higher density, higher performance and various

Contextual Info: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 16160A achieves high integration, high-speed operation, and low-power

Contextual Info: 16160C 16160CL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)16160C/CL has realized higher density, higher performance and various

Contextual Info: GM71C S 16160C(CL) 1Mx16, 5V, 4K Ref, FP F e a tu re s Description T h e G M 7 1 C (S )1 6 1 6 0 C /C L is th e new * 1 ,0 4 8 ,5 7 6 W o rd s x 16 B it O rg a n iza tio n g e n e ra tio n d y n a m ic RAM o rg a n iz e d 1 ,0 48,5 76 ' Fast P age M ode C a p a b ility

535W

Abstract: 16160
Contextual Info: GM71 V S 16160C(CL) 1Mx16, 3.3V, 4K Ref, FP Description Features The G M 7 1V (S )1 6 1 60C /C L is the new generation dynamic RAM organized 1,048,576 x 16 bit. G M 71V(S) 16160C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process

Contextual Info: Part Details for P/N: 161601-2 Products | Brands | Industries | Customer Service | About Current Brand View Home AMP Part Number Search Text Search Alternate Part Search Multiple Part Comparison Alphabetical Search Brand Search Previous Document Number Search

Contextual Info: Current Transducer LA 25-NP/SP7 For the electronic measurement of currents: DC, AC, pulsed., with galvanic isolation between the primary circuit and the secondary circuit. IPN = 2.5 A 16160 Features Electrical data IPN Primary nominal current rms IPM Primary current, measuring range

GM7IC

Abstract: CS110- 12
Contextual Info: 16160C 16160CL LG Semicon Co.,Ltd. 1,048,576 W ORDS x 16 BIT CM OS DYNAM IC RAM Description Features The GM 71C S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. G M 71C(S) 16160C/CL has realized higher density, higher performance and various

phc51

Abstract: A0317
Contextual Info: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The 16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques

Contextual Info: 16160C 16160CL LG Semicon Co.,Ltd. 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16160C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71V(S)16160C/CL has realized higher density, higher performance and various

L038

Contextual Info: 16160 160 x 160dots 1/160 Duty STN LED Backlight • MECHANICAL DATA Item U nit Dimension Module Size 87. XW x 87.0(H) x 10.3(T> mm View Area 62XXW) x 62.0(H) mm Dot Size 0.34 x 0.34 mm mm 0 3 8 x 0 38 Dot Pitch Min Supply Voltage V do- for Logic Vss Supply Voltage