160V 200A TRANSISTOR Search Results
160V 200A TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
160V 200A TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BSP297Contextual Info: Rev. 2.2 BSP297 Ò Small-Signal-Transistor SIPMOS Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101 |
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BSP297 PG-SOT223 IEC61249221 VPS05163 BSP297 H6327: 55/150oss | |
BSP297
Abstract: L6327 VPS05163
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BSP297 PG-SOT223 VPS05163 L6327: BSP297 L6327 VPS05163 | |
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Contextual Info: BSP297 Rev. 2.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4 x Qualified according to AEC Q101 |
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BSP297 PG-SOT223 IEC61249Â VPS05163 H6327: | |
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Contextual Info: UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, |
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FDP52N20 FDPF52N20T FDPF52N20T | |
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Contextual Info: BSP297 Rev. 1.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 VPS05163 Type Package Ordering Code |
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BSP297 PG-SOT-223 VPS05163 Q67000-S068 E6327: | |
p035h
Abstract: HFA16PA120CPBF HFA16PA120C HFA16PA60C IRFP250
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PD-95974 HFA16PA120CPbF O-247AC HFA16PA120C O-247, p035h HFA16PA120CPBF HFA16PA60C IRFP250 | |
B120
Abstract: HFA08TB120 IRFP250
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PD-95736 HFA08TB120PbF 140nC O-220AC HFA08TB120 ad08TB120PbF O-220, B120 IRFP250 | |
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Contextual Info: Preliminary Data Sheet PD -2.361 rev. A 11/00 HFA16PA120C HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • * 2 Features VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF max. = 3.3V |
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HFA16PA120C O-247AC HFA16PA120C O-247, | |
irfp250 applications
Abstract: marking code C76 HFA08PB120 IRFP250
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5680A HFA08PB120PbF 140nC O-247AC HFA08PB120 cons20PbF O-247, irfp250 applications marking code C76 IRFP250 | |
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Contextual Info: BSP297 Rev. 1.2 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information |
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BSP297 PG-SOT-223 VPS05163 BSP297 P-SOT-223 E6327: L6327: | |
diode 66a
Abstract: SMD TRANSISTOR MARKING 94 BSP297 BSP297 200V marking 66a MARKING QG 6 PIN E6327 L6327 VPS05163
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BSP297 PG-SOT-223 P-SOT-223 E6327: L6327: VPS05163 diode 66a SMD TRANSISTOR MARKING 94 BSP297 BSP297 200V marking 66a MARKING QG 6 PIN E6327 L6327 VPS05163 | |
BSP297
Abstract: E6327 Q67000-S068 VPS05163
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BSP297 OT-223 VPS05163 Q67000-S068 E6327: BSP297 E6327 Q67000-S068 VPS05163 | |
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Contextual Info: BSP297 Rev. 1.22 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS 200 V RDS on 1.8 W ID 0.66 A · Enhancement mode · Logic Level · dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information |
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BSP297 PG-SOT-223 VPS05163 L6327: BSP297 | |
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Contextual Info: PD - 95680 HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A |
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HFA08PB120PbF 140nC O-247AC HFA08PB120 O-247, O-247AC | |
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HFA08TB120
Abstract: IRFP250
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HFA08TB120 140nC O-220AC HFA08TB120 constr33 IRFP250 | |
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Contextual Info: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252 |
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SPD07N20 SPU07N20 P-TO251 P-TO252 Q67040-S4120-A2 Q67040-S4112-A2 | |
HFA16PA120C
Abstract: IRFP250 irrm1
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HFA16PA120C O-247AC HFA16PA120C O-247, IRFP250 irrm1 | |
HFA08TB120Contextual Info: Bulletin PD -2.383 rev. B 04/00 HFA08TB120 TM HEXFRED Ultrafast, Soft Recovery Diode VR = 1200V VF typ. * = 2.4V Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions |
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HFA08TB120 140nC O-220AC HFA08TB120 | |
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Contextual Info: PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A |
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5680A HFA08PB120PbF 140nC O-247AC HFA08PB120 08-Mar-07 | |
94055
Abstract: P035H IRFP250 HFA16PA120C HFA16PA60C
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PD-95974 HFA16PA120CPbF O-247AC HFA16PA120C 12-Mar-07 94055 P035H IRFP250 HFA16PA60C | |
4 switched reluctance motor miller
Abstract: APTM20DHM08 mosfet 400a 200V
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APTM20DHM08 profil1000 4 switched reluctance motor miller APTM20DHM08 mosfet 400a 200V | |
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Contextual Info: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, |
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KSM61N20 O-220 | |
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Contextual Info: PD-95736 HFA08TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A |
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PD-95736 HFA08TB120PbF 140nC O-220AC HFA08TB120 08-Mar-07 | |
94055Contextual Info: PD-95974 HFA16PA120CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features * VR = 1200V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF max. = 3.3V IF (AV) = 8.0A IRRM (typ.) = 4.5A |
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PD-95974 HFA16PA120CPbF O-247AC HFA16PA120C 08-Mar-07 94055 | |