160NS Search Results

200n60

Abstract: robot control
Contextual Info: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

Datasheet CD4008

Abstract: cd4008 CD4008BMS IOH15
Contextual Info: CD4008BMS S E M I C O N D U C T O R CMOS 4-Bit Full Adder With Parallel Carry Out November 1994 Features Pinout • High-Voltage Type 20V Rating CD4008BMS TOP VIEW • 4 Sum Outputs Plus Parallel Look-ahead Carry-Output • High-Speed Operation - Sum In-To-Sum Out, 160ns

Contextual Info: Memory Module Specifications KHX1600C9D3K4/16GX 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

Contextual Info: Advance Technical Information IXFH160N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 150V 160A Ω 9.0mΩ 160ns TO-247 Symbol Test Conditions Maximum Ratings VDSS VDGR

DSP320C10I

Abstract: DSP320C10 DSP320C10-25 dsp32010 Pin Diagram of ic MC 4086 DSP320 dps320
Contextual Info: MICROCHIP TECHNOLOGY INC OS D • Microchip blD3201 DDD4DflS t ■_ DSP320C10 CMOS Digital Signal Processor FEATURES: ■ ■ ■ ■ ■ 160ns instruction cycle max 144 word on-chip data RAM ROMIess version-DSP320C10 1.5K word on-chip program ROM - DSP320CM10

La 7676

Contextual Info: CD4008BMS S3 H Ä ls a s CMOS 4-Bit Full Adder With Parallel Carry Out Decem ber 1992 Pinout Features CD4008BMS TOP VIEW • High-Voltage Type 20V Rating • 4 Sum Outputs Plus Parallel Look-ahead Carry-Output • High-Speed Operation - Sum In-To-Sum Out, 160ns

Contextual Info: Semiconductor CD4008BMS C M O S 4-B it Full A d d er W ith Parallel C arry O ut November 1994 Pinout Features • High-Voltage Type 20V Rating CD4008BM S TOP VIEW • 4 Sum Outputs Plus Parallel Look-ahead Carry-Output • High-Speed Operation - Sum In-To-Sum Out, 160ns

Contextual Info: Memory Module Specifications KHX1866C9D3/4G 4GB 512M x 64-Bit DDR3-1866 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin) 36ns (min.)

Contextual Info: Memory Module Specifications KHX16C9B1B/4 4GB 512M x 64-Bit DDR3-1600 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin) 36ns (min.)

Contextual Info: High-Speed Load Response, Non-Isolated Type POL DC-DC Converter Ultra Small Size, Able to drive the Latest Digital LSI with High-Speed Load Response! NEW RoHS BELLNIX Compliance High Response T=160ns 12A BSV-H Series High accuracy Output Accuracy ±1 High-Speed Load Response, Step Down DC-DC Converter

Contextual Info: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient

Contextual Info: Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 IXFH150N17T2 IXFT150N17T2 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 175V 150A Ω 12.0mΩ 160ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings

Ci 4008 HCF

Abstract: HCF4008BC1 Ci 4008 HCC4008BF
Contextual Info: r= Z S G S -T H O M S O N » M i L i O T i s * ! H C C / H C F 4 0 0 8 B 4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT • 4 SUM OUTPUTS PLUS PARALLEL LOOKAHERD CARRY-OUTPUT ■ HIGH-SPEED OPERATION-SUM IN-TO-SUM O UT 160ns (typ. : CARRY IN-TO-CARRY OUT 50ns (typ.) AT V d d = 10V, C l = 50pF

Contextual Info: BELLNIX High Speed Load Response, Non-isolated Type POL DC-DC Converter NEW RoHS BELLNIX Compliance Fast response High accuracy T=160ns ±１％ Low Cost Ultra small type and responds to latest Digital LSI 9.5A BSV-HE Series High speed response, Output accuracy ±1% step down DC-DC converter

ddr3

Contextual Info: Memory Module Specifications KHX1600C9D3K3/12GX 12GB 4GB 512M x 64-Bit x 3 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

DDR3-2400

Abstract: Kingston 16gb
Contextual Info: Memory Module Specifications KHX24C11K4/16X 16GB 4GB 512M x 64-Bit x 4 pcs. DDR3-2400 CL11 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

SODIMM DDR3 Mechanical Dimensions

Abstract: SODIMM ddr3 8gb DDR3 Mechanical Dimensions DDR3 SDRAM Document ddr3 so-dimm 204
Contextual Info: Memory Module Specifications KHX1600C9S3K2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1600 CL9 204-Pin SODIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

Sj31

Contextual Info: Æ J S G S T H O M S O N K E M I I L i e r a W l g i H C C / H C F 4 8 B 4-BIT FULL ADDER WITH PARALLEL CARRY OUTPUT . 4 SUM OUTPUTS PLUS PARALLEL LOOKAHERD CARRY-OUTPUT • HIGH-SPEED OPERATION-SUM IN-TO-SUM OUT 160ns typ. : CARRY IN-TO-CARRY OUT 50ns (typ.) AT V dd = 10 V , C l = 50pF

Contextual Info: Memory Module Specifications KHX1333C7AD3K2/8G 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1333 CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

Contextual Info: Memory Module Specifications KHX1333C9D3B1K2/8G 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1333 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

jeida dram 88 pin

Abstract: STI321000C2
Contextual Info: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic

IXFH150N17T2

Abstract: IXFT150N17T2 ixfh150n17t
Contextual Info: Advance Technical Information IXFH150N17T2 IXFT150N17T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 175V 150A Ω 12.0mΩ 160ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings

SODIMM DDR3 Mechanical Dimensions

Contextual Info: Memory Module Specifications KHX1333C7S3K2/4G 4GB 2GB 256M x 64-Bit x 2 pcs. DDR3-1333 CL7 204-Pin SODIMM Kit SPECIFICATIONS CL(IDD) 7 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns (min.) Row Active Time (tRASmin)

Contextual Info: High-Speed Load Response, Non-Isolated Type POL DC-DC Converter RoHS Compliance Ultra Small Size, Able to drive the Latest Digital LSI with High-Speed Load Response! High Response T=160ns 12A BSV-H Series Output Accuracy ±3 High-Speed Load Response, Step Down DC-DC Converter