160BE Search Results

CY7C68013

Abstract: LCMXO640C ceh3v3 USB m
Contextual Info: C 25 4 u 7 /X 5 R /1 0 V J1 R11 18k USB R12 82k C 24 1 0 U /X 5R /6V 3 C1 4 u 7 /X 5 R /1 0 V ¡58 — s r i= 1 i CB3V3 ^ |>-EDs| 160BEC 3 00 R 1 7 I 1* I CY7C68013 to­ r n m ¥ m R24 I 18k I £,9 X0_USB Rev: 2 August 2007 - -s I O <S> I X -¡II 3 Q *•

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

MBM29LV160TE70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

TSOP 48 Package

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

FPT-48P-M19

Abstract: FPT-48P-M20 marking M29 F160BE-55 be552
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-1E FLASH MEMORY CMOS 16M 2 M x 8/1M x 16 BIT MBM29F160TE/BE-55/-70/-90 • FEATURES • 0.23(.im Process Technology • Single 5.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

MBM29F160

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be

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DIODE A6

Abstract: MBM29LV160TE70
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV160TE70
Contextual Info: MBM29LV160TE/BE70/90 Data Sheet Retired Product 70/90 MBM29LV160TE/BE Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90/MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • FEATURES • 0.23µm Process Technology • Single 5.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

AE f3

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160TE MBM29LV160TE70
Contextual Info: MBM29LV160TE70/90/ 160BE70/90 70/90 データシート 生産終息品 MBM29LV160TE 70/90 /160BE Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: MBM29LV160TE70/90 160BE70/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: Page 1 of 14 Catalog Search for type DCMC Cornell Dubilier Electronics, Inc Type DCMC, High Capacitance, Computer Grade, 85 °C N om inal S iz e D X L in Cap uF . V o l t s . S u r g e . C a t a l o g N u m ber. ESR M a x . R i p p l e Max (WVdc) V d c +25C 120Hz

MBM29F160BE70TN

Abstract: MBM29F160TE-70TN MBM29F160TE70TN DS05 FPT-48P-M19 FPT-48P-M20 MBM29F160BE-70TN MBM29F160BE MBM29F160 MBM29F160BE-90TN
Contextual Info: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • FEATURES • 0.23µm Process Technology • Single 5.0 V read, program and erase Minimizes system level power requirements