1600MB Search Results

ddr3

Abstract: intel-centrino J0876E60 DDR3 DIMM elpida DDR3 impedance 78-FBGA "DDR3 SDRAM" 78FBGA DDR3-800 ddr3 tsop
Contextual Info: DDR3 SDRAM DDR3 SDRAMDDR2 SDRAM、DDR SDRAMの比較 項 目 DDR3 SDRAM DDR2 SDRAM DDR SDRAM 転送速度 800/1066/1333/1600Mbps 400/533/667/800Mbps 200/266/333/400Mbps 400/533/667/800MHz (200/266/333/400MHz) (100/133/166/200MHz) 電源電圧 (VDD/VDDQ)

Contextual Info: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

ALLAYER COMMUNICATIONS

Abstract: gvrp AL1022 "address learning" disable 802.3 802.1d port AL126 AL3000 AL300A 00XXX1
Contextual Info: AL126 Revision 1.0 8-Port 10/100 Mbit/s Dual Speed Fast Ethernet Switch • • • • • • • • Supports eight 10/100 Mbit/s Ethernet ports with MII and RMII interface Capable of trunking up to 800 Mbit/s link with link fail-over Full- and half-duplex mode operation

k4b2g1646q

Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Contextual Info: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

MIG toshiba

Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Contextual Info: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.

lsi 2108 iops

Abstract: LSI SAS 2108 LSI 1078 MegaRAID SAS 9260-8i iops "read channel" hdd lsi 8888ELP multipath SSD CONTROLLER AND CHIP SET
Contextual Info: MegaRAID Benchmark Tips January 27, 2010 Benchmark Review Requirements • Providing the following information will improve our ability to support product evaluations – Summary of test cases you will be performing – System details and benchmark parameters listed on slide 3

96-ball FBGA

Contextual Info: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)

w3j128m72

Abstract: w3j512m72
Contextual Info: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s  35%* Space savings vs. FBGA  Packages:  Reduced part count

toshiba a75

Abstract: ejdalf
Contextual Info: TOSHIBA THMR1E8-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108.864-WORD BY 18-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E8 is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

L9D3256M32SBG1

Contextual Info: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999

Optical SAS QSFP

Abstract: Amphenol QSFP L77SDB25S1ACH4F U65B044010T MD5ML50S10 Amphenol 191-2801-110 Amphenol d 40 - e16a VCSEL array HDMI G38A71214AEU amphenol airbag
Contextual Info: Amphenol Amphenol Preferred Parts Catalogue Amphenol Corporation Amphenol was founded in 1932. Today the company is one of the largest manufacturers of interconnect products in the world serving towards 8 major markets: Aerospace/Military, Automotive, Broadband

TA 7698 AP

Contextual Info: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:

Contextual Info: Rev. 1.0, Nov. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

K4B4G0846C

Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
Contextual Info: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B4G0846B-HYK0

Abstract: K4B4G0846B-HYH9 K4B4G0446B-HYK0 K4B4G0446B-HYH9 09 06 115 2932
Contextual Info: Rev. 1.2, Dec. 2011 K4B4G0446B K4B4G0846B 4Gb B-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4B4G0846a

Contextual Info: Rev. 1.11, Jan. 2011 K4B4G0446A K4B4G0846A 4Gb A-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

D2618

Contextual Info: DDR3L SDRAM Registered DIMM DDR3L SDRAM Specification 240pin Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

k4b2g0446d-hyh9

Contextual Info: Rev. 1.01, Nov. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

k4b2g0846f

Abstract: K4B2G0846F-MY k4b2g0846 M392B5673FH0
Contextual Info: DDR3L SDRAM VLP Registered DIMM DDR3L SDRAM Specification 240pin VLP Registered DIMM based on 1Gb F-die 72-bit ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE