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TE Connectivity 154N-015V-RT Pressure Sensor Module 0Psi to 15Psi 0V to 0.1V Vacuum Gauge - Bag (Alt: 154N-015V-RT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	154N-015V-RT	Bag		17 Weeks	50	1 - 10 - 100 $171.07 1000 $158.24 10000 $158.24	Buy Now
Mouser Electronics	154N-015V-RT					1 - 10 - 100 $206.06 1000 $206.06 10000 $206.06	Get Quote
Sager	154N-015V-RT				25	1 - 10 - 100 $204.18 1000 $204.18 10000 $204.18	Buy Now
Interstate Connecting Components	154N-015V-RT					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	154N-015V-RT					1 - 10 - 100 $159.97 1000 $159.97 10000 $159.97	Buy Now
Abracon Corporation ASDMPAC-150.0000MHz-VR-T Standard Clock Oscillators Oscillator 150.0000MHz 25ppm -40 C 125 C CMOS 2.25V 3.63V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ASDMPAC-150.0000MHz-VR-T					1 - 10 - 100 - 1000 $3.47 10000 $3.47	Get Quote
Abracon Corporation ASEMPAC-150.0000MHz-VR-T Standard Clock Oscillators Oscillator 150.0000MHz 25ppm -40 C 125 C CMOS 2.25V 3.63V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ASEMPAC-150.0000MHz-VR-T					1 - 10 - 100 - 1000 $3.59 10000 $3.59	Get Quote
Abracon Corporation ASFLMPAC-150.0000MHz-VR-T Standard Clock Oscillators Oscillator 150.0000MHz 25ppm -40 C 125 C CMOS 2.25V 3.63V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ASFLMPAC-150.0000MHz-VR-T					1 - 10 - 100 - 1000 $3.89 10000 $3.89	Get Quote
Abracon Corporation ASVMPAC-150.0000MHz-VR-T Standard Clock Oscillators Oscillator 150.0000MHz 25ppm -40 C 125 C CMOS 2.25V 3.63V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ASVMPAC-150.0000MHz-VR-T					1 - 10 - 100 - 1000 $4.19 10000 $4.19	Get Quote

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15VRT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
WEIGHING SCALE 8051 Abstract: AD1175 weighing scale code using microcontroller 8051 2e21 Contextual Info: ~ ~ HighAccuracy, 22-Bit Integrating AIDConverter ANALOG DEVICES FEATURES High Resolution: 22 Bits Wide Dynamic Range: 133dB Low Nonlinearity: Integral: :t 0.5ppm max Differential: :t 0.5LSB max High Stability: Gain: :!:1ppm/oC max Zero: :to.5J.lVrC max INL: :to.01ppmrC	Original	22-bit 133db 01ppmrc oo25ppm/oc +7ssq-122-03-g-s ad1l75 22-pin weighing scale 8051 ad1175 weighing scale code using microcontroller 8051 2e21	PDF
086-56 UNC Abstract: pabi CAMH9126 Contextual Info: FEATURES MODEL NO. CAMH9126 L-Band Op. Freq. 52 dB Gain 61.7 dBm Pout 45% Efficiency VSWR, Infinity to1 Withstand AMP A L-Band Power Amplifier A .250-.252 DIA. x.40 MIN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 MIN DEEP INCLUDING SUPPORT FLANGE.	Original	camh9126 086-56 unc pabi	PDF
266CT125-3E2A Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A Contextual Info: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit	Original	an-937 500ns/div 266ct125-3e2a gban-pvi-1 +8240xt250-3ea2 hexfet power mosfet designer manual cd4093 cd4093 ic details irf540 complementary ca3103 ir7509 toroid 3e2a	PDF
SPM6G140-060D Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977 Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE	Original	spm6g140-060d 500ua c 4977 igbt driver analog devices +4brake cleaner 210c bi-directional switches igbt on 4977	PDF
SPM6G120-120D Abstract: 210C 3 pins Variable resistor 5K ohm Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE	Original	spm6g120-120d 500ua 210c 3 pins variable resistor 5k ohm	PDF
GBAN-PVI-1 Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary Contextual Info: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit	Original	an-937 500ns/div gban-pvi-1 ca3103 +8266ct125-3e2a ir7509 ic cd4093 oscillator with cd4093 types dc to dc chopper zener in4148 240xt250-3ea2 irf540 complementary	PDF
ca3103 Abstract: 2n2222 -331 Cd4093 SiHF Contextual Info: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2	Original	an-937 ca3103 2n2222 -331 cd4093 +1sihf	PDF
Contextual Info: MODEL NUMBER CAM H9126 L-Band Power Amplifier FEATURES • L-Band Op. Freq. • 52 dB Gain • 61 dBm Pout • 45% Efficiency AMP A A .250-.252 DIA. x.40 M IN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 M IN DEEP INCLUDING SUPPORT FLANGE. 10.50	Original	h9126	PDF
CAMH9126 Abstract: AA-75 amplifier UNC-2B 086-56 UNC 15VRT RF power amplifier MHz Contextual Info: MODEL NUMBER CAMH9126 L-Band Power Amplifier FEATURES • L-Band Op. Freq. • 52 dB Gain • 61 dBm Pout • 45% Efficiency AMP A A .250-.252 DIA. x.40 MIN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 MIN DEEP INCLUDING SUPPORT FLANGE. 10.50 MAX	Original	camh9126 aa-75 amplifier unc-2b 086-56 unc +215vrt rf power amplifier mhz	PDF
HEXFET Power MOSFET designer manual Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent Contextual Info: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2	Original	an-937 500ns/div hexfet power mosfet designer manual gban-pvi-1 +8266ct125-3e2a hexfet power mosfet designer manual gban-pvi-1 ttl dm7400 cd4093 ic details cd4093 ci 7407 ic cd4093 ir2121 equivalent	PDF