15N1 Search Results

15N1 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS15N120HB		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247	Datasheet
TW015N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247	Datasheet

15N1 Datasheets (6)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
15N10	UMW	100V 15A 50W 80MR@10V,10A 2.5V@2	Original	PDF	670.48KB	5
15N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N120C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N15	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N15	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1

15N1 Price and Stock

Filter by Manufacturer

Select Manufacturer


Walsin Technology Corporation HH15N100G500CT Capacitor: ceramic; low ESR,MLCC; 10pF; 50V; C0G (NP0); ±2%; SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	HH15N100G500CT		8,700		100	1 - 10 - 100 $0.02 1000 $0.01 10000 $0.01	Buy Now
Walsin Technology Corporation HH15N100F500CT Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±1%; SMD; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	HH15N100F500CT		2,793		100	1 - 10 - 100 $0.03 1000 $0.01 10000 $0.01	Buy Now
Luguang Electronic Technology Co Ltd LGEGW15N120TS Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	LGEGW15N120TS		333		1	1 $2.16 10 $1.72 100 $1.60 1000 $1.32 10000 $1.32	Buy Now
Walsin Technology Corporation MG15N151J500CT Capacitor: ceramic; 150pF; 50V; C0G (NP0); ±5%; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MG15N151J500CT				10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote
Walsin Technology Corporation RF15N1R7B500CT Capacitor: ceramic; MLCC; 1.7pF; 50V; C0G (NP0); ±0.1pF; SMD; 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	RF15N1R7B500CT				10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Get Quote

Find more 15N1 price and stock on Findchips.com

15N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	15n120c o-247 o-268	PDF
15N12 Abstract: 575 C2 Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	15n120b o-220ab o-263 15n12 +1575 c2	PDF
Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	15n120b o-247	PDF
IC IGBT 15N120 Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits Contextual Info: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector	Original	15n120 o-220 o-263 ic igbt 15n120 +715n120 igbt ixrp 15n120 ixys ixra15n120 bi-directional switches igbt bi-directional switches" igbt ixrp15n120 induction heating circuits	PDF
15N15 Abstract: rfm15n15 diode RA 225 R Contextual Info: R FM 15N 12/15N 15 R 15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d	OCR Scan	12/15n fp15n12/15n15 -204a fp15n12 +6rfp15n15 92cs-j4b52r1 92cs-36i45 15n15 rfm15n15 diode ra 225 r	PDF
Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000	Original	15n100c o-220ab o-263	PDF
15N120 Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS Contextual Info: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C	Original	15n120 o-220 20070703a ic igbt 15n120 +6bi-directional switches igbt bi-directional switches" igbt 15n120 igbt igbt clip igbt for induction heating ic ixrp 15n120 ixys	PDF
15N120BD1 Abstract: 15N120 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120cd1 o-247ad 15n120 +1ixgt15n120bd1	PDF
IXSH15N120B Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200	Original	15n120b o-247 o-268 13/1or +1ixsh15n120b	PDF
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	15n120c o-220ab o-263 728b1	PDF
Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms	OCR Scan	15n120au1 o-247 -100/ps	PDF
Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120c o-220ab o-263 o-220	PDF
RGE 17-18 Abstract: TO220-4 weight Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i	OCR Scan	15n120c o-220 o-263 rge 17-18 +1to220-4 weight	PDF
15N120 Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120	PDF

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM	OCR Scan	15n120c	PDF
15n10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15n100q o-247 o-268 o-268aa +115n10	PDF
IC IGBT 15N120 Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT Contextual Info: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions	Original	15n120 o-220 o-263 ic igbt 15n120 +2bi-directional switches" igbt bi-directional switches igbt	PDF
Contextual Info: Advanced Technical Information HIGH Voltage IGBT with Diode = 30 A IXSH 15N120BD1 IC25 IXST 15N120BD1 V = 1200 V CES VCE sat = 3.4 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 o-247	PDF
001-045 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20	OCR Scan	15n120b o-268 001-045	PDF
RGE 17-18 Abstract: 10i2 TRI 1461 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V	OCR Scan	15n120b t0-220 o-263 rge 17-18 +210i2 tri 1461	PDF
15N120BD1 Abstract: 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15n120bd1 15n120cd1 o-247ad o-268 +1ixgt15n120bd1	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V	Original	15n120b o-220 o-263	PDF
Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	15n100c o-220ab o-263 728b1	PDF
15n120 Contextual Info: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES	Original	15n120 o-263ab 20110120b	PDF

15N1 Search Results

15N1 Result Highlights (2)

15N1 Datasheets (6)

15N1 Price and Stock

Walsin Technology Corporation HH15N100G500CT

Walsin Technology Corporation HH15N100F500CT

Luguang Electronic Technology Co Ltd LGEGW15N120TS

Walsin Technology Corporation MG15N151J500CT

Walsin Technology Corporation RF15N1R7B500CT

15N1 Datasheets Context Search

15N12

IC IGBT 15N120

15N15

15N120

15N120BD1

IXSH15N120B

RGE 17-18

15N120

15n10

IC IGBT 15N120

001-045

RGE 17-18

15N120BD1

15n120