15N1 Search Results

15N1 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS15N120HB		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247	Datasheet
TW015N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247	Datasheet

15N1 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
15N10	UMW	100V 15A 50W 80MR@10V,10A 2.5V@2	Original	PDF	670.48KB	5
15N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N120C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N15	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N15	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
SK15N10	Shikues Semiconductor	N-Channel 100V MOSFET, RDS(ON)≦100mΩ@VGS=10V, low RDS(ON), high DC current, medium voltage applications.	Original	PDF
MDD15N10D	Microdiode Semiconductor	100V N-Channel Enhancement Mode MOSFET	Original	PDF
SL15N10A	SLKOR	VDS 100V, ID 15A, RDS(ON) at VGS=10V <115mohm, at VGS=4.5V <10mohm, Trench Power MV MOSFET, high density cell, heat dissipation, DC-DC Converters, power management.	Original	PDF

15N1 Price and Stock

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Walsin Technology Corporation HH15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HH15N100J500CT	Digi-Reel	23,504		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
	HH15N100J500CT	Cut Tape	23,504		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
	HH15N100J500CT	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Walsin Technology Corporation MT15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT15N100J500CT	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now
Avnet Asia	MT15N100J500CT			14 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Goford Semiconductor G15N10C N100V,RD(MAX)<110M@10V,RD(MAX)<1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	G15N10C	Cut Tape	2,299		1	1 $0.77 10 $0.48 100 $0.31 1000 $0.21 10000 $0.21	Buy Now
	G15N10C	Digi-Reel	2,299		1	1 $0.77 10 $0.48 100 $0.31 1000 $0.21 10000 $0.21	Buy Now
Laird, A DuPont Business MGV1004R15N-10 FIXED IND 150NH 43A 0.6MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MGV1004R15N-10	Reel	2,000		500	1 - 10 - 100 - 1000 $0.83 10000 $0.80	Buy Now
UMW 15N10 100V 15A 50W 80MR@10V,10A 2.5V@2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	15N10	Digi-Reel	1,554		1	1 $0.84 10 $0.52 100 $0.34 1000 $0.23 10000 $0.23	Buy Now
	15N10	Cut Tape	1,554		1	1 $0.84 10 $0.52 100 $0.34 1000 $0.23 10000 $0.23	Buy Now

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15N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	15N120C O-247 O-268	PDF
15N12 Abstract: 575 C2 Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	15N120B O-220AB O-263 15N12 575 C2	PDF
Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	15N120B O-247	PDF
IC IGBT 15N120 Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits Contextual Info: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector	Original	15N120 O-220 O-263 O-220 IC IGBT 15N120 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits	PDF
15N15 Abstract: rfm15n15 diode RA 225 R Contextual Info: R FM 15N 12/15N 15 R 15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d	OCR Scan	12/15N FP15N12/15N15 -204A FP15N12 RFP15N15 92CS-J4B52R1 92CS-36I45 15N15 rfm15n15 diode RA 225 R	PDF
Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000	Original	15N100C O-220AB O-263	PDF
15N120 Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS Contextual Info: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C	Original	15N120 O-220 20070703a 15N120 IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS	PDF
15N120BD1 Abstract: 15N120 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1	PDF
IXSH15N120B Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200	Original	15N120B O-247 O-268 O-247) 13/1or IXSH15N120B	PDF
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	15N120C O-220AB O-263 728B1	PDF
Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms	OCR Scan	15N120AU1 O-247 -100/ps;	PDF
Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120C O-220AB O-263 O-220	PDF
RGE 17-18 Abstract: TO220-4 weight Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i	OCR Scan	15N120C O-220 O-263 RGE 17-18 TO220-4 weight	PDF
15N120 Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 15N120	PDF

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM	OCR Scan	15N120C	PDF
15n10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15N100Q 15N100Q O-247 O-268 O-268AA 15n10	PDF
IC IGBT 15N120 Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT Contextual Info: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions	Original	15N120 O-220 O-263 O-263 O-220 IC IGBT 15N120 15n120 "bi-directional switches" IGBT bi-directional switches IGBT	PDF
Contextual Info: Advanced Technical Information HIGH Voltage IGBT with Diode = 30 A IXSH 15N120BD1 IC25 IXST 15N120BD1 V = 1200 V CES VCE sat = 3.4 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 O-247	PDF
001-045 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20	OCR Scan	15N120B 15N120B O-268 001-045	PDF
RGE 17-18 Abstract: 10i2 TRI 1461 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V	OCR Scan	15N120B 15N120B T0-220 O-263 RGE 17-18 10i2 TRI 1461	PDF
15N120BD1 Abstract: 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V	Original	15N120B 15N120B O-220 O-263	PDF
Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	15N100C O-220AB O-263 728B1	PDF
15n120 Contextual Info: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES	Original	15N120 O-263AB 20110120b 15n120	PDF

15N1 Search Results

15N1 Result Highlights (2)

15N1 Datasheets (9)

15N1 Price and Stock

Walsin Technology Corporation HH15N100J500CT

Walsin Technology Corporation MT15N100J500CT

Goford Semiconductor G15N10C

Laird, A DuPont Business MGV1004R15N-10

UMW 15N10

15N1 Datasheets Context Search

15N12

IC IGBT 15N120

15N15

15N120

15N120BD1

IXSH15N120B

RGE 17-18

15N120

15n10

IC IGBT 15N120

001-045

RGE 17-18

15N120BD1

15n120