15N1 Search Results

15N1 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS15N120HB		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247	Datasheet
TW015N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247	Datasheet

15N1 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
15N10	UMW	100V 15A 50W 80MR@10V,10A 2.5V@2	Original	PDF	670.48KB	5
15N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N12	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N120C3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N15	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
15N15	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.25KB	1
CXG15N120H	CREATEK Microelectronics	1200V 15A IGBT in TO-247 package with VCE(sat) of 2.30V at 15A, featuring high speed switching, soft turn-off waveforms, and square RBSOA for motor control and inverter applications.	Original	PDF
SK15N10	Shikues Semiconductor	N-Channel 100V MOSFET, RDS(ON)≦100mΩ@VGS=10V, low RDS(ON), high DC current, medium voltage applications.	Original	PDF
HKTD15N10	Shenzhen Heketai Electronics Co Ltd	N-channel Power MOSFET HKTD15N10 with 100V drain-source voltage, 15A continuous drain current, and 100mΩ maximum RDS(on) at VGS=10V, available in TO-252 package.	Original	PDF
CJU15N10	JCET Group	N-channel Power MOSFET CJU15N10 with 100V drain-source voltage, 15A continuous drain current, 70mΩ RDS(on) at 10V VGS, featuring low gate charge, fast switching, and avalanche energy rating.	Original	PDF
SL15N10A	SLKOR	VDS 100V, ID 15A, RDS(ON) at VGS=10V <115mohm, at VGS=4.5V <10mohm, Trench Power MV MOSFET, high density cell, heat dissipation, DC-DC Converters, power management.	Original	PDF
HSBB15N15S	Huashuo Semiconductor	N-Ch 150V Fast Switching MOSFET HSBB15N15S with 35 mΩ typical RDS(ON), 15 A continuous drain current, low gate charge, and advanced trench technology for high-efficiency synchronous buck converters.	Original	PDF
MDD15N10D	Microdiode Semiconductor	100V N-Channel Enhancement Mode MOSFET	Original	PDF
SLD_U15N10T	Maplesemi	N-channel 100V 15A Power MOSFET with RDS(on) of 95mΩ at VGS = 10V, advanced TRENCH technology, low Crss, fast switching, and 100% avalanche tested for PWM and power management applications.	Original	PDF

HSU15N10	Huashuo Semiconductor	N-Ch 100V Fast Switching MOSFET with 15A continuous drain current, 65 mΩ typical RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converter applications.	Original	PDF

15N1 Price and Stock

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Walsin Technology Corporation HH15N100J500CT CAP CER 10PF 50V C0G/NP0 0402
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HH15N100J500CT	Digi-Reel	22,394		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
	HH15N100J500CT	Cut Tape	22,394		1	1 $0.10 10 $0.02 100 $0.01 1000 $0.01 10000 $0.01	Buy Now
	HH15N100J500CT	Tape & Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
IBS Electronics	HH15N100J500CT				1	1 $0.00 10 $0.00 100 $0.00 1000 $0.00 10000 $0.00	Buy Now
onsemi NTMFS015N15MC MOSFET N-CH 150V 9.2A/61A 8PQFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	NTMFS015N15MC	Cut Tape	8,038		1	1 $4.28 10 $2.82 100 $1.99 1000 $1.82 10000 $1.82	Buy Now
	NTMFS015N15MC	Digi-Reel	8,038		1	1 $4.28 10 $2.82 100 $1.99 1000 $1.82 10000 $1.82	Buy Now
	NTMFS015N15MC	Tape & Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.49	Buy Now
Mouser Electronics	NTMFS015N15MC		4,258			1 $2.00 10 $1.77 100 $1.68 1000 $1.65 10000 $1.48	Buy Now
Rochester Electronics	NTMFS015N15MC		44,783		1	1 - 10 - 100 $1.48 1000 $1.33 10000 $1.25	Buy Now
Richardson RFPD	NTMFS015N15MC				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	NTMFS015N15MC			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	NTMFS015N15MC			23 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTMFS015N15MC		16,640			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	NTMFS015N15MC				1	1 $2.38 10 $2.38 100 $2.38 1000 $2.38 10000 $2.38	Buy Now
Wuhan P&S	NTMFS015N15MC		2,840		1	1 $4.15 10 $4.15 100 $2.65 1000 $2.01 10000 $2.01	Buy Now
PanJit Group PSMN015N10NS2_R2_00201 100V/ 1.5M / TOLL FOR ESS/ BBU/
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	PSMN015N10NS2_R2_00201	Cut Tape	2,541		1	1 $8.93 10 $6.11 100 $4.85 1000 $4.85 10000 $4.85	Buy Now
	PSMN015N10NS2_R2_00201	Digi-Reel	2,541		1	1 $8.93 10 $6.11 100 $4.85 1000 $4.85 10000 $4.85	Buy Now
	PSMN015N10NS2_R2_00201	Tape & Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.97	Buy Now
STMicroelectronics STH315N10F7-6 MOSFET N-CH 100V 180A H2PAK-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STH315N10F7-6	Cut Tape	1,829		1	1 $6.03 10 $4.04 100 $2.91 1000 $2.88 10000 $2.88	Buy Now
	STH315N10F7-6	Digi-Reel	1,829		1	1 $6.03 10 $4.04 100 $2.91 1000 $2.88 10000 $2.88	Buy Now
	STH315N10F7-6	Tape & Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.35 10000 $2.35	Buy Now
Mouser Electronics	STH315N10F7-6		3,072			1 $5.88 10 $4.05 100 $2.92 1000 $2.35 10000 $2.35	Buy Now
STMicroelectronics	STH315N10F7-6		3,082		1	1 $5.76 10 $3.97 100 $2.86 1000 $2.83 10000 $2.83	Buy Now
Avnet Silica	STH315N10F7-6		4,000	27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STH315N10F7-6			27 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IBS Electronics	STH315N10F7-6		243,000		1,000	1 - 10 - 100 - 1000 $3.23 10000 $3.23	Buy Now
Infineon Technologies AG IPT015N10NF2SATMA1 MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IPT015N10NF2SATMA1	Digi-Reel	1,744		1	1 $4.51 10 $2.98 100 $2.11 1000 $1.95 10000 $1.95	Buy Now
	IPT015N10NF2SATMA1	Cut Tape	1,744		1	1 $4.51 10 $2.98 100 $2.11 1000 $1.95 10000 $1.95	Buy Now
Avnet Americas	IPT015N10NF2SATMA1	Tape & Reel	7,200	8 Weeks	1,800	1 - 10 - 100 - 1000 - 10000 $1.25	Buy Now
Mouser Electronics	IPT015N10NF2SATMA1		1,355			1 $4.51 10 $2.99 100 $2.12 1000 $1.60 10000 $1.59	Buy Now
Newark	IPT015N10NF2SATMA1	Cut Tape	1,373		5	1 $5.24 10 $3.72 100 $3.43 1000 $3.43 10000 $3.43	Buy Now
Rochester Electronics	IPT015N10NF2SATMA1		576		1	1 - 10 - 100 $1.61 1000 $1.44 10000 $1.35	Buy Now

Rutronik	IPT015N10NF2SATMA1	Tape & Reel	9,040		1,800	1 - 10 - 100 - 1000 - 10000 $1.57	Buy Now
Chip One Stop	IPT015N10NF2SATMA1	Cut Tape	300	0 Weeks, 1 Days	1	1 $4.04 10 $2.58 100 $1.95 1000 $1.61 10000 $1.50	Buy Now
EBV Elektronik	IPT015N10NF2SATMA1			9 Weeks	1,800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	IPT015N10NF2SATMA1				1	1 $1.53 10 $1.53 100 $1.53 1000 $1.53 10000 $1.51	Buy Now

Find more 15N1 price and stock on Findchips.com

15N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous	Original	15N120C O-247 O-268	PDF
15N12 Abstract: 575 C2 Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES	Original	15N120B O-220AB O-263 15N12 575 C2	PDF
Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	15N120B O-247	PDF
IC IGBT 15N120 Abstract: 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits Contextual Info: IXRP 15N120 IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability IXRP 15N120 C IXRA 15N120 TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector	Original	15N120 O-220 O-263 O-220 IC IGBT 15N120 15n120 15n120 igbt IXRP 15N120 IXYS IXRA15N120 bi-directional switches IGBT "bi-directional switches" IGBT IXRP15N120 induction heating circuits	PDF
15N15 Abstract: rfm15n15 diode RA 225 R Contextual Info: R FM 15N 12/15N 15 R 15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d	OCR Scan	12/15N FP15N12/15N15 -204A FP15N12 RFP15N15 92CS-J4B52R1 92CS-36I45 15N15 rfm15n15 diode RA 225 R	PDF
Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000	Original	15N100C O-220AB O-263	PDF
15N120 Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS Contextual Info: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C	Original	15N120 O-220 20070703a 15N120 IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS	PDF
15N120BD1 Abstract: 15N120 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 15N120CD1 O-247AD 15N120BD1 15N120 15N120CD1 IXGT15N120BD1	PDF
IXSH15N120B Contextual Info: IXSH 15N120B I = 30 A C25 IXST 15N120B V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200	Original	15N120B O-247 O-268 O-247) 13/1or IXSH15N120B	PDF
Contextual Info: IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series VCES IC25 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 30 A IC90 TC = 90°C	Original	15N120C O-220AB O-263 728B1	PDF
Contextual Info: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms	OCR Scan	15N120AU1 O-247 -100/ps;	PDF
Contextual Info: Advanced Technical Information IXGA 15N120C IXGP 15N120C IGBT Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat = 1200 V = 30 A = 3.8 V = 115 ns tfi(typ) Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120C O-220AB O-263 O-220	PDF
RGE 17-18 Abstract: TO220-4 weight Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 15N120C IXGP 15N120C Lightspeed Series V CES IC 25 V C E sa t =1200 V = 30 A = 3.8 V = 115 ns t fi( ty p ) Sym bo l T e s tC o n d itio n s V CES ^ = 2 5 °C to 150°C 1200 V V CGR Tj = 25 °C to 150°C ; R GE = 1 M £i	OCR Scan	15N120C O-220 O-263 RGE 17-18 TO220-4 weight	PDF
15N120 Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 15N120	PDF

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM	OCR Scan	15N120C	PDF
15n10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	15N100Q 15N100Q O-247 O-268 O-268AA 15n10	PDF
IC IGBT 15N120 Abstract: 15n120 "bi-directional switches" IGBT bi-directional switches IGBT Contextual Info: IXRH 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat = 2.5 V typ. IGBT with Reverse Blocking capability C TO-220 G G C C (TAB) E G CE C (TAB) TO-263 E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions	Original	15N120 O-220 O-263 O-263 O-220 IC IGBT 15N120 15n120 "bi-directional switches" IGBT bi-directional switches IGBT	PDF
Contextual Info: Advanced Technical Information HIGH Voltage IGBT with Diode = 30 A IXSH 15N120BD1 IC25 IXST 15N120BD1 V = 1200 V CES VCE sat = 3.4 V "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 O-247	PDF
001-045 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGH 15N120B IXGT 15N120B V CES ^C25 V CE sat ^fi(typ) Maximum Ratings Symbol TestC onditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20	OCR Scan	15N120B 15N120B O-268 001-045	PDF
RGE 17-18 Abstract: 10i2 TRI 1461 Contextual Info: □ IXYS Advanced Technical Information HiPerFAST IGBT IXGA 15N120B IXGP 15N120B V CES IC25 V CE sat ^ fi(typ) Symbol T e s tC o n d itio n s V CES ^ = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES V GEM Continuous ±20 V	OCR Scan	15N120B 15N120B T0-220 O-263 RGE 17-18 10i2 TRI 1461	PDF
15N120BD1 Abstract: 15N120CD1 IXGT15N120BD1 Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1 IC25 1200 V 30 A 1200 V 30 A VCE(sat) 3.2 V 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	15N120BD1 15N120CD1 O-247AD O-268 15N120CD1 IXGT15N120BD1	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 15N120B IXGP 15N120B VCES = 1200 V = 30 A IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V	Original	15N120B 15N120B O-220 O-263	PDF
Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM	Original	15N100C O-220AB O-263 728B1	PDF
15n120 Contextual Info: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES	Original	15N120 O-263AB 20110120b 15n120	PDF

15N1 Search Results

15N1 Result Highlights (2)

15N1 Datasheets (15)

15N1 Price and Stock

Walsin Technology Corporation HH15N100J500CT

onsemi NTMFS015N15MC

PanJit Group PSMN015N10NS2_R2_00201

STMicroelectronics STH315N10F7-6

Infineon Technologies AG IPT015N10NF2SATMA1

15N1 Datasheets Context Search

15N12

IC IGBT 15N120

15N15

15N120

15N120BD1

IXSH15N120B

RGE 17-18

15N120

15n10

IC IGBT 15N120

001-045

RGE 17-18

15N120BD1

15n120