15MAY2003 Search Results

M25P16 VDFPN8

Abstract: M25P16 A21 SO8 MARKING CODE A21 SO8 Numonyx AN1995
Contextual Info: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features n 16 Mbit of Flash memory n Page Program up to 256 bytes in 0.64 ms (typical) n Sector Erase (512 Kbit) in 0.6 s (typical) n Bulk Erase (16 Mbit) in 13 s (typical) n 2.7 V to 3.6 V single supply voltage

Contextual Info: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum

M25P16 VDFPN8

Abstract: MARKING code mf stmicroelectronics VDFPN 8x6 M25P16-V vdfpn8 VDFPN8 package SO8N M25P16 MARKING CODE A21 SO8
Contextual Info: M25P16 16 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 17 s (typical)

VDFPN8

Contextual Info: M25P16 16 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface Feature summary • 16Mbit of Flash Memory ■ Page Program up to 256 Bytes in 1.4ms (typical) ■ Sector Erase (512 Kbit) ■ Bulk Erase (16Mbit) ■ 2.7 to 3.6V Single Supply Voltage

VDFPN8 package

Contextual Info: M25P32 32-Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode

A3 SOT223

Abstract: i-pak Package zener diode
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE

Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit) 2.7 to 3.6V Single Supply Voltage

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

MIL-T-10727

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. DIST FT R E V IS IO N S LTR F1 1.65 [.065] WHEN TINES ARE COMPRESSED TO 0 .25[.010] FROM BODY DESCRIPTION REV PER ECO—05—13552 DATE

VDFPN8 package

Abstract: M25P32 SO8w
Contextual Info: M25P32 32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • 32 Mbit of Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ VPP = 9 V for Fast Program/Erase mode

MLP8 package

Abstract: MLP8 m25p64 PACKAGE MARKING so16-300 MLP8 m25p64 PACKAGE MLP8 m25p64
Contextual Info: M25P64 64 Mbit, low voltage, Serial Flash memory with 75 MHz SPI bus interface Features „ 64 Mbit of Flash memory „ 2.7 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) „ Page Program (up to 256 Bytes)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

M831

Abstract: M830 STM-64 Frequency multiplier IT 249
Contextual Info: Product Brief Integrated Circuit Systems, Inc. 10 GBIT OC-192 CLOCK & DATA RECOVERY MODULE GENERAL DESCRIPTION PIN ASSIGNMENT 1.89 x 2.49 inch SMA The M830/831 Voltage Controlled Clock & Data Recovery Module recovers the spectral component from an incoming NRZ data stream and outputs a

24SER

Contextual Info: M25P16 16 Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512 Kbit) Bulk Erase (16Mbit)

i-pak Package zener diode

Abstract: STN1NK60Z stn1nk60
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω

Contextual Info: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features • 16 Mbit of Flash memory ■ Page Program up to 256 bytes in 0.64 ms (typical) ■ Sector Erase (512 Kbit) in 0.6 s (typical) ■ Bulk Erase (16 Mbit) in 13 s (typical) ■ 2.7 V to 3.6 V single supply voltage

MLP8 m25p64

Abstract: vdfpn8 wip 74 VDFPN 8x6 MLP8 m25p64 PACKAGE M25P64 ST10
Contextual Info: M25P64 64Mbit, Low Voltage, Serial Flash Memory With 50 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (64Mbit)

1NK60Z

Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω

1Nk60

Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
Contextual Info: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω

MLP8

Abstract: M25P16 M25P16 VDFPN8
Contextual Info: Numonyx Forté Serial Flash Memory M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features „ 16 Mbit of Flash memory „ Page Program up to 256 bytes in 0.64 ms (typical) VFDFPN8 (MP) 6 x 5 mm (MLP8) „ Sector Erase (512 Kbit) in 0.6 s (typical)

A11-A21

Abstract: A0-A21 M29DW640D M29DW640DB 3A800
Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

VDFPN 8x6

Abstract: 8x6mm M25P32 ST10 mlp 8x6
Contextual Info: M25P32 32 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 32Mbit of Flash Memory Page Program up to 256 Bytes in 1.4ms (typical) Sector Erase (512Kbit) Bulk Erase (32Mbit)