15J1 Search Results

AD518JN

Abstract: AD518 op amp AD518 AD518J AD518KN ad507 HOSA
Contextual Info: ,. W LowCost, HighSpeed,IC Operational Amplifier ANALOG DEVICES FEATURES High Slew Rate: 70V /J1.s Wide Bandwidth: 12MHz 60° Phase Margin At Unity Gain Crossover Drives 300pF Load Guaranteed Low Offset Drift: 15J1.VtC Max (AD518K) Pin Compatible With 118-Type

Scans-0017302

Contextual Info: 15JI2 FORCED AtR COOLED TRIODE Directiy heated T E N T A T IV E GENERAL The 15J12 is a forced air cooled triode which has a directly heated thoriated tungsten filament, it is intended fo r use in r.f. heating equipment. R A T IN G Filament Voltage Filament Current

HN2V02H

Contextual Info: HN2V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN2V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including three devices in FM8 package (flat pack mini 8 pin)

HN1V01H

Contextual Info: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including four devices in FM8 package (flat pack mini 8 pin)

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

PLDC18G8

Abstract: T1216 416rp Cypress 12h6 16v8 programming 15WC
Contextual Info: PLDC18G8 CYPRESS SEMICONDUCTOR CMOS Generic 20-Pin Programmable Logic Device • Generic architecture to replace >tandard logic functions including; 10H8, 1 2 H 6 ,1 4 H 4 ,1 6 H 2 ,1 0 L 8 ,1 2 U , 14L4, 1 6 L 2 ,1 0 P 8 ,1 2 P 6,14P 4,1«P 2,16H 8, 16L 8,16P 8,16R 8,16R 6,16R 4,16R P 8,

Contextual Info: DS1075-1ND PRELIMINARY DALLAS SEMICONDUCTOR FEATURES D S 1 0 7 5 - I N D EconO scillator/D ivider PIN ASSIGNMENT • Dual Fixed frequency outputs 200 KHz - 100 MHz I/O Q D • U ser-program m able o n -ch ip dividers (from 1 - 5 1 3 ) • U ser-program m able o n -ch ip prescaler (1, 2, 4)

7C4211

Abstract: lm 4046 IC
Contextual Info: CY7 C4421/4201/4211/4221 CY7C4231/4241/4251 CYPRESS Features • 64 \ 9 C Y 7 C 4 4 2 I ( • 2 5 6 x 9 ( C Y 7 C 4 2 0 II • 512 x 9 IC Y 7 C 4 2 1 1 • I K x 9 (C Y 7 C 4 2 2 1 ) • 2 K x 9 ( C Y 7 C 4 2 3 I) • 4 K x 9 (C Y 7 C 4 2 4 1 ) • 8 K x 9 (C Y 7 C 4 2 5 1 )

toshiba P

Contextual Info: HN2V02H TOSHIBA TO SHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN7X/ÌÌ7H U nit in mm A M R AD IO B AN D TU N IN G APPLICATIONS. +0.3 4-5-0,2 • High Capacitance Ratio : CIV /C 8 V = 19.5 Typ. • High Q • Including Three Devices in FM8 Package (Flat

Contextual Info: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1X/ÌÌ7H AM RADIO BAND TUNING APPLICATIONS. U nit in mm -0.3 4 -5 -0 ,2 • High Capacitance Ratio : CIV /C 8 V = 19.5 Typ. • High Q • Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)

1V02H

Abstract: HN1V02H
Contextual Info: HN1V02H 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 HN1V02H ○ AM チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C8V = 19.5 標準 • 性能指数が高い。 • 1 パッケージに 2 素子を内蔵しています。

Contextual Info: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including four devices in FM8 package (flat pack mini 8 pin)

Contextual Info: HN2V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN2V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including three devices in FM8 package (flat pack mini 8 pin)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

Contextual Info: TOSHIBA HN2V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. — • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin)

asterm

Contextual Info: DS2407 m a i i æ l ^ D S 2 4 0 7 Dual Addressable Switch Plus • h a c o w u c t o t K _ B it M e m o r y ii FEATURES PIN ASSIGNMENT • Open drain PIO p in s are controlled and their logic level can be determined over 1—WireT^ bus for d o s e d -io o p control

HN1V02H

Contextual Info: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 1 SYMBOL VR Tj T stg RATING 16 125 -5 5 -1 2 5 UNIT V

H123

Abstract: MARKING D3 8pin HN2V02H
Contextual Info: HN2V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Three Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1—8V

Contextual Info: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: TO SH IBA HN2V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 3.1 ±0 .2 □8 C'JCO to 7 to ÖÖ + 1 6 3 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range

4271-35J1

Contextual Info: =#. ^BP^f?YPRF.SS Features • 16K x 9 CY7C4261 • 32K x 9 (CY7C4271) • High-speed 100-MHz operation <10 ns read/write cycle time) • Pin-compatible density upgrade to CY7C42XI family • Pin-compatible density upgrade to IDT7220I/11/21/31/41/51 • Fully asynchronous and simulta­

Contextual Info: TOSHIBA HN1V02H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 02 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. M A X IM U M RATINGS Ta = 25°C (D 1# D2) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 SYMBOL VR

24EB60

Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Contextual Info: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC

HN1V02H

Contextual Info: HN1V02H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V02H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including two devices in FM8 package (flat pack mini 8 pin)