15DEC03 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS LTR D 1. DESCRIPTION REV PER 0G3H—0031 —03 S P E C IF IC A T ID N S DATE OWN APVD 15DEC03 JR GJ • D

FLUXGATE

Abstract: inductive sensor IC Fluxgate Magnetic Field Sensor 74HC4066 application note 74HC4066 Magnetic inductive Sensor datasheet magnetic sensor circuit diagram Magnetic inductive Sensor inductive sensor oscillator circuit compass Sensor circuit
Contextual Info: 1000083 R02 – Revised 15Dec03 Application Note: Discrete Circuit for Magneto-Inductive Sensors Introduction PNI Corporation’s Magneto-Inductive MI sensors are based on patented technology that delivers breakthrough, cost-effective magnetic field sensing performance. These sensors change inductance with

SUB75N05-06A

Abstract: SUP75N05-06A
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET

s4 vishay

Abstract: DG444B DG444BDJ DG444BDN DG444BDY DG445B DG445BDJ DG445BDY
Contextual Info: DG444B/445B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection TTL/CMOS Logic Compatible D D D D D

DG441B

Abstract: s4 vishay DG441BDJ DG441BDN DG441BDY DG442B DG442BDJ DG442BDY VN0300L equivalent
Contextual Info: DG441B/442B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection—Q: −1 pC TTL/CMOS-Compatible Logic

s4 vishay

Abstract: DG444B DG444BDJ DG444BDN DG444BDY DG445B DG445BDJ DG445BDY
Contextual Info: DG444B/445B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection TTL/CMOS Logic Compatible D D D D D

SMR1D

Contextual Info: SMR1D Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Precision Molded Surface Mount Resistor FEATURES • Small footprint • Temperature Coefficient of Resistance — Nominal TCR: + 0.6 ppm/°C 0°C to + 25°C ; - 0.6ppm/°C (+ 25°C to + 60°C)

591D

Contextual Info: 591D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Low ESR, Conformal Coated, Maximum CV FEATURES • • • • • New case size offerings. 1.2mm to 2mm height Terminations: Lead Pb -free (2) standard. Very low ESR 8mm, 12mm tape and reel packaging available per EIA481-1 and reeling per IEC 286-3. 7” [178mm] standard.

SUP 03

Abstract: SUB75N05-06A SUP75N05-06A
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET

s4 vishay

Abstract: DG441B DG441BDJ DG441BDN DG441BDY DG442B DG442BDJ DG442BDY
Contextual Info: DG441B/442B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection—Q: −1 pC TTL/CMOS-Compatible Logic

V4580

Abstract: DG444B DG444BDJ DG444BDN DG444BDY DG445B DG445BDJ DG445BDY
Contextual Info: DG444B/445B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection TTL/CMOS Logic Compatible D D D D D

Contextual Info: BAR63V-03 VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

,vishay 0805 SMD resistors 0.050

Abstract: IPC-782A WSE0805 dale leaded resistor code 1K500 10 k .5 watts smd resistors
Contextual Info: WSE Vishay Dale Power Metal Strip Resistors Extended Range Surface Mount FEATURES • 0805 size resistors with 0.25 watt power rating • Smaller footprint than a 1206 resistor (uses 40% less board space) • Superior overload and pulse handling capability

B230LA

Abstract: B240A
Contextual Info: B230LA & B240A Vishay Semiconductors New Product formerly General Semiconductor High-Current Density Surface Mount Schottky Rectifier Reverse Voltage 30 & 40 V Forward Current 2.0 A DO-214AC SMA Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79)

Contextual Info: DG441B/442B Vishay Siliconix New Product Improved Quad SPST CMOS Analog Switches FEATURES D D D D D D BENEFITS Low On-Resistance: 45 W Low Power Consumption: 1.0 mW Fast Switching Action—tON: 120 ns Low Charge Injection—Q: −1 pC TTL/CMOS-Compatible Logic

STG3157

Abstract: DG3157 DG3157DL NC7SB3157 SC70-6 SN74LVC1G3157 Pl5A3157
Contextual Info: DG3157 Vishay Siliconix New Product High-Speed, Low rON, SPDT Analog Switch 2:1 Multiplexer/Demultiplexer Bus Switch FEATURES D Direct Cross to Industry Standard SN74LVC1G3157 NC7SB3157, NLASB3175, Pl5A3157, and STG3157 D SC-70 6-Lead Package D 1.65-V to 5.5-V VCC Operation

1806 footprint

Contextual Info: VSM1506 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor FEATURES • High Precision, Low TCR • Temperature Coefficient of Resistance: Nominal TCR: + 0.6ppm/°C 0°C to + 25°C - 0.6ppm/°C (+ 25°C to + 60°C)

DG3157

Abstract: DG3157DL NC7SB3157 SC70-6 SN74LVC1G3157 STG3157
Contextual Info: DG3157 Vishay Siliconix New Product High-Speed, Low rON, SPDT Analog Switch 2:1 Multiplexer/Demultiplexer Bus Switch FEATURES D Direct Cross to Industry Standard SN74LVC1G3157 NC7SB3157, NLASB3175, Pl5A3157, and STG3157 D SC-70 6-Lead Package D 1.65-V to 5.5-V VCC Operation

Si4434DY

Abstract: Si4434DY-T1 72562
Contextual Info: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS

Contextual Info: SSA23L and SSA24 Vishay Semiconductors New Product formerly General Semiconductor High-Current Density Surface Mount Schottky Rectifier Reverse Voltage 30 & 40 V Forward Current 2.0 A DO-214AC SMA Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79)

IDCP3020

Abstract: IDCP-3020
Contextual Info: IDCP-3020 Vishay Dale High Current, Surface Mount Inductor FEATURES • High energy storage. • Low resistance. • Tape and reel packaging for automatic handling. ELECTRICAL SPECIFICATIONS MATERIALS Inductance Range: 10.0µH to 470µH. Inductance Tolerance: 20%.

Contextual Info: FX5545G006 Vishay Industry Smallest and Low Profile 7.5W 1.5A DC/DC Boost Converter with High Output Density Power FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 100% duty cycle • Power density - more than 280W/inch3

Multimeter fluke 23

Contextual Info: FX5545G108 Vishay The Smallest and Low Profile 1.35V to 4.5V*, 4A with 570W/in3 Density Power Efficiency up to 95% DC/DC Buck Coverter FEATURES • Fully integrated DC/DC converter • High efficiency over large load range • 100% duty cycle • Power density - more than 570W/inch3

SUB75N05-06A

Abstract: SUP75N05-06A sup75n05
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET