15DB Search Results

BTS 132 SMD

Contextual Info: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package

Contextual Info: Coaxial Precision Fixed Attenuator 50Ω 2W 15dB Maximum Ratings Operating Temperature DC to 18000 MHz Features -55°C to 100°C Storage Temperature BW-S15W2+ -55°C to 100°C* *With mated connectors, unmated, 85°C max. • DC to 18000 MHz • precise attenuation

HAT-15

Contextual Info: Coaxial HAT-15+ HAT-15 Precision Fixed Attenuator 50Ω 1W 15dB Maximum Ratings DC to 2000 MHz Features Operating Temperature -45°C to 100°C Storage Temperature -55°C to 100°C • excellent VSWR, 1.05:1 typ. • excellent flatness, 0.20 dB typ. to 2000 MHz

Contextual Info: Coaxial VAT-15W2+ VAT-15W2 SMA Fixed Attenuator 50Ω 2W 15dB Maximum Ratings DC to 6000 MHz Features Operating Temperature -45°C to 100°C Storage Temperature -55°C to 100°C • wideband coverage, DC to 6000 MHz • 2 watt rating • rugged unibody construction

Contextual Info: Coaxial Precision Fixed Attenuator 50Ω 5W 15dB Maximum Ratings Operating Temperature Storage Temperature BW-N15W5+ DC to 18000 MHz Features -55°C to 100°C -55°C to 100°C* * With mated connectors; unmated, 85°C max. • DC to 18000 MHz • precise attenuation

SD2941-10

Abstract: EE-19 transformer SD2931-10 VK200
Contextual Info: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

notebook schematic diagram

Abstract: P2779A P2779AF-08SR P2779AF-08ST P2779AG-08SR P2779AG-08ST
Contextual Info: P2779A June 2005 rev 0.1 Low-Cost Notebook EMI Reduction IC Features the clock source, which provides system-wide reduction of ƒ Provides up to 15dB of EMI suppression EMI of all clock dependent signals. The P2779A allows ƒ FCC approved method of EMI attenuation

1SV170

Contextual Info: SMM-008, -010 100-4000 MHz Low Noise Amplifier Preliminary Data Features - 2.2dB Noise Figure - Excellent VSW R: 1.7:1 Typical - 18dB Gain and 15dBm P1dB - Operates From Single 12V Supply - Low-Cost Surface-Mount Package SMM-010 Pm 0«'iion«tKHi Ground Ground

GALI-4F

Contextual Info: MMIC Amplifier GALI-4F+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 50mA 16.0 16.0 15.5 - 45°C 15.5 40mA 15.0 +25°C 15.0 50mA 14.5 +85°C 14.5 60mA 14.0 dB

Contextual Info: Plug-In LIMITER PLS-2 Typical Performance Data FREQUENCY MHz 100.0 140.0 180.0 220.0 260.0 320.0 360.0 400.0 440.0 480.0 520.0 560.0 600.0 640.0 680.0 740.0 780.0 820.0 860.0 900.0 POWER OUTPUT (15dBm IN) (3 dBm IN) (dBm) -3.51 -3.46 -3.40 -3.34 -3.29 -3.23

RDF-1245C

Contextual Info: GALI-4F Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-4F Reference Data: RDF-1245C S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -15dBm, Icc = 50mA, Vd = 4.34V @Temperature = +25degC

ERA-1

Abstract: era1 ERA-1 MMIC
Contextual Info: MMIC Amplifier ERA-1+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 40mA 15 15 14 - 45°C 14 32mA 13 +25°C 13 40mA 12 +85°C 12 48mA 11 dB (dB) 11 10 10 9 9

P2040CF-08SR

Abstract: I2040C-08SR I2040C-08ST P2040C P2040C-08SR P2040C-08ST P2040C-08TR P2040C-08TT
Contextual Info: P2040C September 2005 rev 1.4 LCD Panel EMI Reduction IC Features system wide reduction of EMI of all clock dependent signals. The P2040C allows significant system cost ƒ FCC approved method of EMI attenuation. ƒ Provides up to 15dB of EMI suppression savings by reducing the number of circuit board layers and

A450-FIS

Abstract: F1-8751CXX F1-0031-40C 8122S fixed attenuator sma F1-8228S 8125s A40D-FIS 8222s ATTENUATOR
Contextual Info: The F IS In-Line Fixed Attenuator is built to meet your low reflection attenuation requirements. Each cord is custom built to accommodate up to 10 meters of cable and the connector styles of your choice. The 5dB and 10dB versions hold a +/-.5dB tolerance with the 15dB and 20dB holding a 1dB tolerance. Please specify operating wavelength. The in-line attenuator pro­

Contextual Info: •Optical Fixed Attenuators ●For Multimode HRS No. Product Number CL820-0063-0 HRFC-AT1S-B05A Attenuation ±1.5 dB 5dB Reflection Attenuation c22dB CL820-0064-3 HRFC-AT1S-B10A 10dB c22dB CL820-0065-6 HRFC-AT1S-B15A 15dB c22dB CL820-0066-9 HRFC-AT1S-B20A

Contextual Info: SPECIFICATION D Mot ing Cycles 500 F ilter C type Copoc i tonce i70p f ±20% Work ing Vo 1toge 10Ov Current Rating 7.5A I nsu la t ion Resistance >1Gfi FREQUENCY MHzl PCB Layout Component side ATTENUATION IdB 5 - 10 IdB 50 10dB 100 15dB 500 35dB 1000 32dB

Contextual Info: SPECIFICATION D 6 .,0 .3 Moling Cyc1es 500 F iller C type Copac i tonce 470pf±20* Working Vo 1toge 10Ov Current Rating 7.5A 1nsu1at ion Resistance >1GQ v— 0,9" FREQUENCY [MHz] 0.2 5 Solder buckets for AWG 20 Mox ATTENUATION IdB - 10 IdB 50 10dB 100 15dB

DIN iec 286-3

Contextual Info: RF Transformer 15dB directional coupler recommended frequency range: 4MHz – 862 MHz Circuit diagram of directional coupler: 1 6 2 5 3 4 DL 3,6 B78408-A1231-A3 Test arrangement for directional coupler: Measurement instrument: Network Analyser Test platina: RK751

Contextual Info: P2180 Peak Reducing EMI Solution Features • FCC approved method of EMI attenuation. • Provides up to 15dB EMI reduction. • Generates a 1X low EMI spread spectrum clock from the input frequency. • Optimized for frequency range: o P2180: 20MHz to 40MHz

FLL21E090IK

Contextual Info: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,

ED1913

Abstract: cs 905 LD511
Contextual Info: Class A Compression Amplifier LD511 - HYB DATA SHEET DESCRIPTION • 64dB typical electrical gain • 0.94VDC voltage regulator • 7ms attack time, 40ms release time • 15dB threshold adjustment The LD511 is a Class A compression amplifier which can operate over a range of DC battery voltages from 1.1V

GR-468

Abstract: 4053S
Contextual Info: Multi-Rate SFP Transceiver IR2 SP-MR-IR2 Features • Single 3.3V supply • 40 km reach • 15dB min, 19.5 typical link budget • Commercial and Reduced Industrial temperature available • 1550nm DFB laser • SFP MSA SFF-8074i compliant • GR 253/STM G.957 compliant

MGF0920A

Abstract: IM335 pt 11400
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm