15CC DIODE Search Results

Contextual Info: SA N S H A ELECTRIC MFG CO 37E 7TR1E43 D QQ00071 1 i SEN J _T z'i'cn DIODE MODULE SanRex Pow er Diode Module D F 40 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor

1.5 j63

Contextual Info: 5-5. Schottky Barrier Diodes •Surface Mount Type Maximum Ratings Absolute Maximum Ratings Type No V rm IF.AV IfSW VI (A) (A) V Tstg <X) Electrical Characteristics Ir V f (V) H 'lfl (mA) (mA) fig-I f Ta-tl00C No .W is e r m u per max per etemem eJenient tiereem

diode A28

Abstract: ma 7050 G952
Contextual Info: MICRO QUALITY / SEMICONDUCTOR. INC 70 Amp HV Schottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D 0 5 Package DIM. A 6 C D E F G JEDEC Package 203AB formerly DO-5 MILLIMETERS INCHES

6v3a

Abstract: 6v3 tube
Contextual Info: SYLVANIA ®^ J^T engineering data service 6V3A MECHANICAL DATA QUICK REFERENCE DATA B u l b . T - 6 Y2 B a s e . E9-1, Small Button 9-Pin

IN4156

Abstract: MZ2361 IN4157 IN4453
Contextual Info: Microsemi Corp. ' Tho diode e x p e n s SCOTTSDALE, A Z SANTA A N A, CA F o r m o r e i n f o r m a ti o n call: IN4156, IN4157, IN4453, IN4829, IN4830, IN5179 STABISTORS Also, Tight Tolerance MPDIOO thru MPD400A or MZ2360 and MZ2361 602 941-6300 PACKAGE

Contextual Info: sim THE RESISTOR PEOPLE THICK FILM TEMPERATURE COMPENSATION RESISTOR Exclusive thick film process -results in a very linear, negative, 300 ppm.' C resistance temperature characteristic Heat conducting ceramic substrate RGT SERIES Digital marking High conductivity plate-on

and gate 74LS138

Contextual Info: PRELIMINARY Semiconductor MM54HCT138/MM74HCT138 3-to-8 Line Decoder General Description This decoder utilizes mtcroCMOS Technology, 3.0 micron silicon gate N-weil CMOS, and are well suited to memory address decoding or data routing applications. Both circuits

Contextual Info: P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup

p4c423

Abstract: P4C422
Contextual Info: P4C423 HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup

Contextual Info: f j j P E R IC O M PI49FCT807T PI49FCT2807T Fast CMOS Clock Driver Product Features: • G uaranteed low skew: 0.25 ns • Low input capacitance • M inim um duty cycle distortion • 1:10 fanout • High speed: 3.5 ns propagation delay • T T L input and CM O S output com patible

P4C188

Abstract: P4C188L
Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology Standard Pinout (JEDEC Approved)

Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS à FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25 ns (Commercial) - 20/25/35/45/55 ns (Military) ■ Low Power (Commercial/Military) -7 1 5 m W Active-12 /1 5

Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Produced with PACE Technology

P4C187

Abstract: P4C187L
Contextual Info: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEA TU R ES • Full CMOS, 6T Cell Data Retention with 2.0V Supply ■ High Speed (Equal A cce ss and Cycle Times) -10/12/15/20/25 n s (Commercial) -15/20/25/35 n s (Military) Separate Data I/O

Linear Regulator sot-89-5

Abstract: T9T marking marking parade B535 TK11217 CIN001 1-12xx
Contextual Info: : i» ? i.TKKL2xxBiTKll 3xxB T A G E R EG U LA TO R WITH ON/OFF SWITCH APPLICATIONS Voltage- Precision ±60m V Built-in on/off Control 0.1 at ±2% or n A Max off tim e * Battery Powered *Cellular Telephones * Personal System s Com m unications Equipment current

GG01

Abstract: P4C188 P4C188L VIEW19
Contextual Info: PERFORMANCE SE MICONDUCTOR SOE » • T O b S S 1!? DODlflSD 52T « P S C P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C188L Military) Three-State Outputs TTL/CMOS Compatible Outputs

Contextual Info: PERFORMANCE SEMICO NDU CTOR SOE D • 70^25^7 Q00QST5 5 P4G187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS T - % - X l - 0 5 :- FEATURES Full CM O S, 6T Cell ■ Data Retention w ith 2.0V Supply High Speed (Equal Access and Cycle Tim es)

sem 2105

Contextual Info: PERFORMANCE SEMICONDUCTOR 20E J> • 70^55^7 OOOOt.51 2 ■ T -V 6 -3 M O P4C1982/P4C1982L, P4C1981 /P4C1981L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS A -

Contextual Info: P E R F O R MA N C E SEMI CONDUCTOR 20E D • 7 Q t 5 S =]7 OODObQ3 P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS r - < t b ■ # 3 - > jA FEATURES Full CM OS, 6T Cell High Speed (Equal Access and Cycle Tim es} -1 5 /1 7 /2 0 /2 5 /3 5 ns (Com m ercial)

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS FEATU RES Data Retention, 10 |xA Typical Current from 2.0V P4C198L/198AL (Military) • Full CMOS, 6T Cell High Speed (Equal A ccess and Cycle Times) -12/15/20/25/35 ns (Commercial)

P4C198

Abstract: P4C198A
Contextual Info: PE R F O R M A N C E SEMICONDUCTOR SÜE D • TDbSS'i? Ü Ü D 1 Û S Ô AID « P S C P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS 7^ v 6 ^ 3 - t FEATURES I Data Retention, 10 pA Typical Current from 2.0V P4C198L/198AL (Military)

Contextual Info: PERFORMANCE SEMICONDUCTOR SQE D • iütaST? aPÜQtll T T - f i-23 - P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS À FEATURES ■ Full CMOS, 6T Cell Data Retention, 10 nA Typical Current from 2.0V. ■ High Speed (Equal Access and Cycle Times)