150O Search Results

dl2450

Abstract: Duracell specifications CR2450 Duracell specifications DL2450 duracell cr2450 Duracell DL2450 CR2450 BATTERY CR2450 200 HR 6G
Contextual Info: SIZE DL2450 Lithium Manganese Dioxide Battery CR2450 SPECIFICATIONS Minimum No Load Voltage: 3.1 V Minimum On Load Voltage: 2.1V on 150Ohms at 1000 Minimum Life 565 H 3.32k Ohms Hr/Day 2 V Rated Capacity 486 mAh on 3.32kOhms to 2V Volume 2.3 cm3 Weight 6g

1SS187

Contextual Info: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

1SS193

Contextual Info: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

1SS190

Contextual Info: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

FAR-F5KB-881M50-B4EA

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard Specification System GSM850 Rx 50/150ohms Date Part Number FAR-F5KB-881M50-B4EA Version 3.1c March 31, 2010 Table 1. Electrical specifications Passband: 869 ~ 894 MHz Condition Item Specification Unit

TRANZORB

Abstract: HGTD8P50G1 HGTD8P50G1S
Contextual Info: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC

Contextual Info: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant includes all homogeneous materials FEATURES • HIGH TEMPERATURE 150OC *See Part P Number N b System S for f Details

Contextual Info: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Description Features • 675 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors- High Temperature 150oC , High Reliability SMD Tantalum Molded Chip AND TEC I INNOVAT O L OGY TH3 Series Tantalum N HN CAPACITORS O 19 62-2012 TH3 - High Temperature Molded Solid Tantalum Chip Capacitors

AEI24-3571

Contextual Info: RoHS HYBRID TRANSFORMER AEI24-3571 Hybrid transformer, 600ohm to 150ohm /38ohm refer to shematic Operating (ambient) temperature: -40ºC to +85ºC Fully RoHS compliant, All insulating materials and plastics rated for UL94V-0 or equivalent. 714-665-1140 ALLIED COMPONENTS INTERNATIONAL

Contextual Info: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant FEATURES includes all homogeneous materials • HIGH TEMPERATURE 150OC *See Part Number System for Details • CAPACITANCE VALUES UP TO 1,000µF

Contextual Info: MCC MPSA42
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components THRU MPSA43 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

Contextual Info: MCC Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature x MPSA94
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Case Material: Molded Plastic.

marking eh

Contextual Info: MCC BCW66H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction

pin configuration pnp transistor BC558

Abstract: BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A bc557 transistor BC556b BC557C polarity bc558 transistor c 557B
Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor

Contextual Info: MCC Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature x MPSA94
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Case Material: Molded Plastic.

transistor marking s79

Contextual Info: MCC BCW68H
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features PNP Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Frequency l Epitaxial Planar Die Construction

bc557 and application

Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x Case Material: Molded Plastic.

2N3819 equivalent

Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
Contextual Info: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating

transistor bc548 bp

Abstract: transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c
Contextual Info: MCC BC546A/B/C BC547A/B/C BC548A/B/C
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon Through Hole Package 150oC Junction Temperature x x

BC557C

Abstract: transistor bc558 features
Contextual Info: MCC BC556,B BC557,A,B,C BC558,B
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x • Amplifier Transistor

sot-23 marking code .S79

Abstract: BCX70G BCX70H marking ag s79 marking code transistor marking s79
Contextual Info: MCC BCX70G THRU BCX70K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l For Switching and AF Amplifier applications.