15 W RF POWER TRANSISTOR NPN Search Results

ferroxcube for ferrite beads 56-590-65

Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B
Contextual Info: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l­ tiplier applications in m ilitary and mobile FM equipment. •

j 6815 transistor

Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

HF10-12S

Abstract: ASI10593
Contextual Info: HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° A C B FEATURES: E • PG = 15 dB min. at 10 W/30 MHz

HF5-12S

Abstract: ASI10591 HF512S
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP

HF20-12S

Abstract: ASI10595 20WPEP
Contextual Info: HF20-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF20-12S is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. PACKAGE STYLE .380 4L STUD .112x45° A C FEATURES: B E E • PG = 15 dB min. at 20 W/30 MHz

ULBM15

Contextual Info: ULBM15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM15 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.5 dB at 15 W/470 MHz • Omnigold Metalization System

BLW77

Abstract: blw77 datasheet HF band power amplifier
Contextual Info: BLW77 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW77 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. PACKAGE STYLE .500 4L FLG FEATURES: • PG = 12 dB min. at 15-30 W/1.6-28 MHz

ASAT15

Abstract: ASI10518
Contextual Info: ASAT15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for General Purpose Class Operations up to 1.7 GHz. PACKAGE STYLE .250 2L FLG A A .020 x 45° Ø .130 NOM. FEATURES: .050 x 45° • Intenal Input Matching Network • PG = 9.2 dB at 15 W/1.7 GHz

HF10-12F

Abstract: ASI10592
Contextual Info: HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A E FEATURES: C Ø.125 NOM. FULL R J • PG = 15 dB min. at 10 W/30 MHz

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3019 is silicon NPN epitaxial planar typ e transistor Dimensions in mm designed fo r RF power am plifiers in U H F band. FEATURES • • High power gain: Gpe

BLV38

Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179
Contextual Info: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2628 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X

Low Noise uhf transistor

Abstract: high power npn UHF transistor RF POWER TRANSISTOR NPN RF TRANSISTOR uhf tv power transistor 15 w RF POWER TRANSISTOR NPN 2SC4245 rf power amplifier transistor NPN RF Transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION •High Current-Gain Bandwidth Product fT= 2400MHz TYP. @VCE = 10 V, IC = 2 mA ·Low Noise APPLICATIONS ·TV tuner , UHF mixer applications ·VHF~UHF band RF amplifier applications

BLX94C

Abstract: MBH100 BLX94
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended

PTB 20245

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Contextual Info: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

c38 transistor

Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
Contextual Info: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for

BFQ540

Abstract: RF POWER TRANSISTOR NPN RF TRANSISTOR
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFQ540 DESCRIPTION •High Gain ·High Output Voltage ·Low Noise APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER

2sc1972

Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

Ericsson 20082

Abstract: 15W-class
Contextual Info: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 Watts linear output power, it may be used for both CW and PEP applications.

SMD Transistor z6

Abstract: 37281 transistor 6 pin SMD Z2 transistor SMD Z2 motorola 986 MRF6408 z11 smd SMD 1206 RESISTOR 100 OHMS smd z5 transistor transistor amplifier 3 ghz 10 watts
Contextual Info: MOTOROLA Order this document by MRF6408/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Power Transistor Designed for PCN and PCS base station applications, the MRF6408 incorporates high value emitter ballast resistors, gold metallizations and offers

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •