14N05 Search Results

STK14N06

Contextual Info: S G S - T H O M ¿ 5 S T K 14N05 S T K 14N06 S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V R D S o n dss 14N05 50 V < 0.12 STK14N06 60 V 0.12 < Id a a 14 A 14 A • TYPICAL RDS(on) = 0.1 Q

Contextual Info: In fin e o n SPD 14N05 |n lp ro v e d « W " ' technologies SIPMOS PowerTransistor Product Sum m ary Features Drain source voltage • N channel • Enhancement mode • Avalanche rated Drain-Source on-state resistance Continuous drain current 55 V f l DS on

14N05

Abstract: SPU14N05 P-TO252 Q67040-S4115-A2 SPD14N05 12J8
Contextual Info: SPD 14N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175˚C operating temperature

14N05

Abstract: Q67040-S4115-A2
Contextual Info: SPD 14N05 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175˚C operating temperature

14N05

Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Contextual Info: 14N05L, 14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Contextual Info: 14N05L, 14N05LSM, 14N05L Data Sheet Title FD1 05L D14 5LS P14 5L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using

f14n05l

Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334
Contextual Info: 14N05L, 14N05LSM, 14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: FP14N05L RFD14N05LSM9A 14N05
Contextual Info: 14N05L, 14N05LSM, 14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: 14N05L, 14N05LSM Data Sheet N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

14n05l

Abstract: 14N05LSM RFD14N05L
Contextual Info: is HARFRIS U U R F D 14N 0 5 L , R F D 14N 0 5 L S M , R F P 1 4 N 0 5 L. S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D EC TO-22QAB • 14A , 50V • ^DS{ON = 0.10012

14n05l

Abstract: 14N05 RFD14N05LSM9A TB334 AN9321 RFD14N05L RFD14N05LSM RFP14N05L
Contextual Info: 14N05L, 14N05LSM, 14N05L Data Sheet January 2002 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
Contextual Info: 14N05L, 14N05LSM, 14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

f14n05l

Contextual Info: 14N05L, 14N05LSM, 14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14N05

Abstract: FT4N05 F14N05
Contextual Info: f f ï H A ^ 8 E“ ' R R 14N05, 14N05SM, 14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel

tt 2246

Abstract: Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L
Contextual Info: 14N05L, 14N05LSM, 14N05L Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09870. Ordering Information PACKAGE 2246.3 Features These are N-channel power MOSFETs manufactured using

Contextual Info: 14N05L, 14N05LSM, 14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and