14MMX22MM Search Results

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

K7P801866M

Abstract: SA12 SA13
Contextual Info: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999

Contextual Info: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

WED8L24513V

Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

Contextual Info: K7P803611M K7P801811M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999

Contextual Info: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Preliminary specification release Mar. 1999 Preliminary Rev. 1.0 - Final specification release

Contextual Info: K7P163612M K7P161812M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Register-Latch Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Aug. 2000 Advance Rev. 1.0 - V DDQ Min. changed to 1.4V - Package thermal characteristics added.

Contextual Info: K7P403611M K7P401811M 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

Contextual Info: K7P403623M K7P401823M 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

K7P161866M-HC30

Contextual Info: K7P163666M K7P161866M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Apr. 2000 Advance Rev. 0.1 - Leakage current test condition changed from VDD to VDDQ

KM718FV4011H-5

Abstract: KM718FV4011H-6 KM736FV4011H-5 KM736FV4011H-6 SA10 SA12 SA13 SA15
Contextual Info: KM736FV4011 KM718FV4011 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

Contextual Info: K7P163666A K7P161866A Advance. 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Revision History Draft Date Remark - Initial Document Dec. 2001 Advance - Absolute maximum ratings are changed VDD : 2.815 - > 3.13 VDDQ : 2.815 - > 2.4

K7D163674B

Contextual Info: K7D163674B K7D161874B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.

SRAM 8T

Contextual Info: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: KM736FV4022 KM718FV4022 PRELIMINARY 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

100-PIN

Abstract: GVT71256ZC36 GVT71512ZC18
Contextual Info: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are

Contextual Info: KM736FV4021 KM718FV4021 PRELIMINARY 128KX36 & 256KX18 SRAM 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Draft Date Rem ark Rev. No. H istory Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

6n7p

Abstract: SAL3
Contextual Info: KM736FV4011 KM718FV4011 PRELIMINARY 128KX36 & 256Kx18 SRAM 128Kx36 & 256Kx18 Synchronous Pipelined SRAM FEATURES • 128KX36 or 256Kx18 Organizations. • 3.3V Core/1,5V Output Power Supply. • HSTl Input and Output Levels. • Differential, HSTL Clock Inputs K, R.

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: K7P403623B K7P401823B 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Preliminary specification release Oct. 2002 Preliminary Rev. 0.1 - Update DC CHARACTERISTICS

KM718FV4022H-65

Abstract: KM718FV4022H-7 KM718FV4022H-75 KM736FV4022H-65 KM736FV4022H-7 KM736FV4022H-75 SA12 SA13
Contextual Info: KM736FV4022 KM718FV4022 PRELIMINARY 128Kx36 & 256Kx18 SRAM Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Rev. 0.0 - Preliminary specification release Rev. 0.1 - Change specification format. No change was made in parameters.

K7D161871B-HC30

Abstract: K7D163671B-HC33 K7D163671B-HC37
Contextual Info: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3

Contextual Info: K7P803622B K7P801822B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document. Jul. 2002 Preliminary Rev. 0.1 - Update Pin Discription. M2=VDDQ -> M2=VDD