14H45 Search Results

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

12270

Abstract: 5SHX 14H4502 IGCT thyristor ABB
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 Doc. No. 5SYA 1227-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs

Contextual Info: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link

14h45

Abstract: Abb diode 14H4505 a3700 5sdf14h4505
Contextual Info: Key Parameters VRRM = 4500 IFAVM = 1400 IFRMS = 2200 IFSM = 25 VF0 = 1.20 rF = 0.32 VDClink = 2200 V A A kA V Fast Recovery Diode 5SDF 14H4505 mΩ V Doc. No. 5SYA 1110-02 July 98 •Patented free-floating silicon technology •Low on-state and switching losses

igct abb

Abstract: IGCT thyristor ABB gct thyristor IGCT HFBR-2528 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

IGCT thyristor ABB

Abstract: MTA-156 IGCT 5szk A115 B115 HFBR-1528 HFBR-2528 VT115 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 1100 8.8x103 1.65 1.2 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4510 PRELIMINARY Doc. No. 5SYA1227-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

IGCT thyristor ABB

Abstract: 5SHX 14H4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 1100 8.8 1.65 1.2 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 mΩ Ω V Doc. No. 5SYA1227-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs

Contextual Info: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1400 25x103 1.2 0.32 2200 V A A V mΩ V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO

5SHX 14H4502

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 1100 ITSM = 9 VT0 = 1.5 rT = 1.4 VDClink = 2800 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 14H4502 PRELIMINARY Doc. No. 5SYA 1227- 02 Feb. 99 • • • • • • • • Features Direct fiber optic control

diode sy 170

Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.