14APR05 Search Results
14APR05 Datasheets Context Search
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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. UOC DIST AD 00 REVISIONS LTR K DESCRIPTION DATE REV PER 0G3C—0224—05 DWN APVD RB JG 14APR05 THE NOTED DIMENSIONS APPLY AT THE INTERSECTION OF THE POST AND HOUSING |
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14apr0531mar2000 | |
A205K
Abstract: 8-40 UNS-2A
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14apr0531mar2000a205k8-40 uns-2a | |
1SYC004Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y 1T C O E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - REVISIO N S RESERVED. AD C O R P O R A T IO N . 00 D E S C R IP T IO N A2 NOTES: ALL MATERIALS AND FINISHES SHALL COMPLY WITH |
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14apr051syc004 | |
BYT43
Abstract: BYT43A BYT43B BYT43D BYT43G BYT43J BYT43K BYT43M
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byt432002/95/ec2002/96/ecbyt43m+7 | |
BYT51
Abstract: BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M DIODE WITH SOD CASE
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byt512002/95/ec2002/96/ecod-57+9 | |
diode sod57
Abstract: L 9090 S330D
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s330d2002/95/ec2002/96/ecod-57+4 | |
BYV27-600
Abstract: BYV27600
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byv27-6002002/95/ec2002/96/ecmil-std-750+3 | |
AT90SC
Abstract: AT90SC19236R AT90SC25672R AT90SC320288RCT ISO7816 ISO7816-3
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384-byte128-byte6507bs14apr05+6 | |
byv27-20Contextual Info: BYV27/. Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristic Low forward voltage e2 Ultra fast recovery time Glass passivated junction Hermetically sealed package Lead Pb -free component |
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byv27/2002/95/ec2002/96/ecod-57+7 | |
BYV27-600Contextual Info: BYV27-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC |
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byv27-6002002/95/ec2002/96/ecod-57+3 | |
Ultra Fast Avalanche Sinterglass Diode
Abstract: SF4001 SF4002 SF4003 SF4004 SF4005 SF4006 SF4007
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sf40012002/95/ec2002/96/ecmil-std-750+9 | |
S330DContextual Info: S330D Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Low reverse current Hermetically sealed package Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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s330d2002/95/ec2002/96/ecod-57+2 | |
BYT62Contextual Info: BYT62 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Controlled avalanche characteristic Low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC |
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byt622002/95/ec2002/96/ecod-57+2 | |
BYV27-600Contextual Info: BYV27-600 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode Features • Glass passivated • Hermetically sealed axial-leaded glass e2 envelope • Low reverse current • Ultra fast soft recovery switching • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC |
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byv27-6002002/95/ec2002/96/ecmil-std-750+2 | |
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BA779
Abstract: BA779-GS08 BA779-GS18 BA779S BA779S-GS08 BA779S-GS18
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ba779ba779sot-232002/95/ec+5 | |
DOT30BContextual Info: BYT43 Vishay Semiconductors Super Fast Soft Recovery Avalanche Sinterglass Diode Features • • • • • • • Miniature axial leaded Glass passivated e2 Hermetically sealed glass envelope Low reverse current High reverse voltage Lead Pb -free component |
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byt432002/95/ec2002/96/ecbyt43a+7 | |
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Contextual Info: THIS C DR A WI N G COPYRI GHT IS UNPUBL IS HED. 19 RELEASED BY AMP INCORPORATED. ALL F OR P U B L I C A T I O N RIGHTS RESERVED. [J+] ^ 44i 44i 44 Jpg] D [§] [gi [gl [gl « [g] [§][§][§][§] [gi [gi ig] [gi [gl [g] [g] [g] [gl [gl [gl [gi « « 0 0 [g] [g] [g] [g] |
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27jun960b20-0820-97 | |
BYV26CV
Abstract: BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26C diode
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byv262002/95/ec2002/96/ecmil-std-750+9 | |
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Contextual Info: 70 MHz Bandpass Filter 0.5 MHz bandwidth Part Number SF0070BA03046S Integrated Circuit Systems, Inc. TYPICAL PERFORMANCE Horizontal: 1 MHz/div Vertical from top : Magnitude Phase Deviation Group Delay Variation 10 & 1 5 500 dB/div deg/div ns/div SPECIFICATION |
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sf0070ba03046s14-apr-05qf12/3 | |
8553Contextual Info: BA779-2 Vishay Semiconductors RF PIN Diodes - Dual in SOT-23 Features • Wide frequency range 10 MHz to 1 GHz • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 e3 1 1 Applications 2 3 18256 Current controlled HF resistance in adjustable |
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ba779-2ot-232002/95/ec2002/96/ec+5 | |
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Contextual Info: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current capability Lead Pb -free component |
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by5272002/95/ec2002/96/ecod-57+3 | |
byt51aContextual Info: BYT51. Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC |
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byt512002/95/ec2002/96/ecod-57+6 | |
BY228
Abstract: BY228-13 BY228-15
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by228/13by228/152002/95/ec2002/96/ec+5 | |
SF4001
Abstract: SF4002 SF4003 SF4004 SF4005 SF4006 SF4007
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sf40012002/95/ec2002/96/ecmil-std-750+9 | |