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    144N1 Price and Stock

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    Infineon Technologies AG DDB6U144N16RBPSA1

    - Trays (Alt: DDB6U144N16RBPSA1)
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    Avnet Americas DDB6U144N16RBPSA1 Tray 15
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    Rochester Electronics DDB6U144N16RBPSA1 4,221 1
    • 1 $128.95
    • 10 $128.95
    • 100 $121.21
    • 1000 $113.48
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    Infineon Technologies AG DDB6U144N16RBOSA1

    Diode Module, 1.6 kV, 150 A, 1.65 V, Bridge - Trays (Alt: DDB6U144N16RBOSA1)
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    Avnet Americas DDB6U144N16RBOSA1 Tray 10
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    Newark DDB6U144N16RBOSA1 Bulk 1
    • 1 $76.67
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    Bristol Electronics DDB6U144N16RBOSA1 7 1
    • 1 $81.68
    • 10 $78.41
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    Vyrian DDB6U144N16RBOSA1 10,484
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    Essentra Components N-1-BK

    Cable Mounting & Accessories Clamp,Screw Mnt,Black,1/16 in Hold
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    Mouser Electronics N-1-BK 2,708
    • 1 $0.10
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    • 100 $0.07
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    Essentra Components N-12B

    Cable Mounting & Accessories Clamp,Screw Mnt,Natural,3/4 in Hold
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    Mouser Electronics N-12B 1,326
    • 1 $0.33
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    • 100 $0.24
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    Essentra Components N-10B

    Cable Mounting & Accessories Clamp,Screw Mnt,Natural,5/8 in Hold
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    Mouser Electronics N-10B 1,224
    • 1 $0.29
    • 10 $0.25
    • 100 $0.21
    • 1000 $0.18
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    Find more 144N1 price and stock on Findchips.com

    144N1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    147N12N

    Contextual Info: 144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ ID 56 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb144n12n3ipi147n12n3ipp147n12n3pg-to263-3+4pg-to262-3pg-to220-3144n12n147n12n PDF

    147N12N

    Abstract: IPP147N12N3 G IEC61249-2-21 PG-TO220-3 f56a 144N12N DS 56-s
    Contextual Info: 144N12N3 G IPI147N12N3 G OptiMOS 3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ 56 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb144n12n3ipi147n12n3ipp147n12n3iec61249-2-21+8pg-to263-3pg-to262-3pg-to220-3147n12nipp147n12n3 gf56a144n12nds 56-s PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76 PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d PDF

    147N12N

    Abstract: JESD22 PG-TO220-3 144N1
    Contextual Info: 144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ 56 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb144n12n3ipi147n12n3ipp147n12n3pg-to263-3+6pg-to262-3pg-to220-3144n12n147n12njesd22144n1 PDF