14329 Search Results

pmi sw 01

Contextual Info: AD7524M Advanced LinCMOS 8-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER D 3 3 2 0 , SEPTEMBER 1989 • • Advanced LinCMOS™ Silicon-Gate Technology J PACKAGE T O P V IEW Easily Interfaced to Microprocessors o u t • On-Chip Data Latches • Monotonicity Over Entire A/D Conversion

clc014aje

Abstract: LMV8244 Video sync splitter lm DS34C86 LMH0074SQ DS8921 HV servo thermopile array 2N3960 DP838640 DS8921 equivalent
Contextual Info: Analog Design Guide for Xilinx FPGAs www.national.com/xilinx 2008 Vol. 1 Analog Solutions for FPGAs .2 Design Tools .3 PowerWise Solutions . 4-5 Data Conversion . 6-12 Amplifiers. 13-23

TSAL7200

Contextual Info: TSAL7200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs

TSAL6200

Contextual Info: TSAL6200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity

Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

TSAL7200

Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity

TSAL5100

Contextual Info: TSAL5100 Vishay Telefunken GaAs/GaAIAs IR Emitting Diode in 0 5 mm T-VA Package D escription TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­

Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

Contextual Info: TSAL7200 VISHAY Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

TSAL6200

Contextual Info: TSAL6200 Vishay Telefunken ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs

MIL-C-915

Abstract: UF3H 33-01UN BJ379 J374 M24643 M24643/33-01UN
Contextual Info: DATA CQNTAINEO IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. ANO SHALL n o t b e o i s c l o s e o . c o p i e d d r u s e d FOR PROCUREMENT OR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION OF TROMPETER H TABLE I DASH CPNNECTPR NP TYPE -I

high power infrared led

Abstract: TSAL7200
Contextual Info: TSAL7200 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

TSAL6200

Contextual Info: TSAL6200 VISHAY Vishay Semiconductors GaAs/GaAlAs IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.

Contextual Info: TSAL7200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 940 nm

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

sony ps3 eye camera

Abstract: 6d40 engine diagram sgx530* vector graphics manual dsi CVBS BTA 16 6008 PowerVR SGX series 5 "cmos camera "mc 7258 wiring diagram ccd camera mc 7218 wiring diagram ET 439 power module fuji
Contextual Info: Public Version AR Y OMAP OMAP34xx Multimedia Device Silicon Revision 3.1, 3.1.1 Texas Instruments OMAP™ Family of Products EL IM IN Version R PR Technical Reference Manual Literature Number: SWPU114R July 2007 – Revised April 2009 Public Version www.ti.com

TSAL7200

Contextual Info: TSAL7200 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description 94 8389 TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs

gs2988

Abstract: GS2989 Gennum GS2988 GS2965 QFN 64 9x9 footprint QFN-32 footprint GS2975A GS2978 1800mV GS2985
Contextual Info: 3Gb/s Serial Routing & Distribution 3Gb/s Serial Routing and Distribution – Generation 2 • • • • • All products 3Gb/s SDI capable Lower power than previous generation Lower jitter than previous generation More features to aid system design -40 to 85 ºC operating temperature range

32-way

Contextual Info: □RAWING No,: M20-610XXXX sto IF IN DOUBT - ASK SHEET 2 OF 2 2 .5 4 *r v n 1 ïr r* 1 H ^ YJ i . U Z / <s n 0 0 o o 0 0 0 o CD +l tn CD ’T J A LL DIMENSIONS IN mm THIRD ANGLE PROJECTION NOT TO SCALE “ T V D I II LO CM 0 0 0 0 — ~ l\ 0 C 0 0 0 —_ JL

Contextual Info: Tem ic TSAL6100 S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diode in 0 5 mm 'T-13A Package Description TSAL6100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technol­

21211

Contextual Info: TSAL6200 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power

k 6257 k epcos

Abstract: icl 7217 44907 thermistor epcos 4215 B57891M0103J000 epcos NTC Thermistor S 234 74538 B57891M0333 000 330130 51117
Contextual Info: NTC thermistors for temperature measurement Leaded NTC, lead spacing 2.5 mm Series/Type: Date: B57891 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

TSAL6200

Contextual Info: TSAL6200 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8389 TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs