141W Search Results

Q62702-C2288

Contextual Info: BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ Type Marking Ordering Code Pin Configuration BCR 141W WDs 1=B Q62702-C2288 Package 2=E 3=C SOT-323

Contextual Info: MOTOROLA Order this document by 141WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual S w itching Diode M 1M A 141W A T1 M 1M A 142W A T1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the S C -7 0 package which

141W

Contextual Info: SIEMENS BCR 141W NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=22ki2, R2=22ki2 BCR 141W WDs Pin Configuration Q62702-C2288 1= B Package O II CO Marking Ordering Code LU II CM Type

Contextual Info: SIEMENS BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i= 2 2 k i2 , R 2= 2 2 k iì TT UT Pin Configuration W Ds 1 = B II CO Q 6 2 7 0 2 -C 2 2 8 8 Package o Marking Ordering Code

Contextual Info: MOTOROLA Order this document by 141WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M 1M A 141W K T 1 M 1M A 142W K T 1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the S C -70 package

VSO05561

Contextual Info: BCR 141W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=22kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 141W WDs Pin Configuration 1=B 2=E Package

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

motorola surface mount marking code

Abstract: motorola diode marking code M1MA141WAT1 M1MA142WAT1 SMD310 motorola silicon dual diode common cathode
Contextual Info: MOTOROLA Order this document by 141WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode 141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which

laptop repairing guide

Abstract: QS865A MJFR load sell transducer 4-20ma troubleshooting and repair lcd monitors LSF CAT5 Cable G60 laptop bta 600b CPS6000-M2 GALAXY MILLENNIUM
Contextual Info: CPS6000-M2 Frame-Mounted Battery Plant Model H5694720 Product Manual Select Code 167-793-112 Comcode CC848802595 Issue 8 January 2008 Notice: The information, specifications, and procedures in this manual are subject to change without notice. Lineage Power assumes no responsibility for any errors that may appear

Contextual Info: Technical Specification Half Brick 48Vin 15Vout 10A 150 Watt, No Heatsink, Isolated DC/DC Converter The PQ48150HGA10 PowerQor Giga converter is a next-generation, board-mountable, isolated, fixed switching frequency DC/DC converter that uses synchronous rectification to achieve extremely high

GSM home automation block diagram

Abstract: atmel 928 gsm radio transceiver superhet tx 433 saw 433.92 13.25311
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • Minimal External Circuitry Requirements for Complete System Solution Adjustable Output Power: 0 to 10 dBm Adjusted and Stabilized with External Resistor

T85 "Rocker Switches" 1E4

Abstract: 5503P T85 "Rocker Switches" PCB mount 3a 250v ac t85 C1520 r13 Rocker Switch 250V T85 16 6 5E4 8653 Rocker Switch H8600VB hp 1502
Contextual Info: 8800 Thinline Rocker Switches 10A 250Vac ៉ Ultra thin rocker switch 10 6 A 250Vac T100 6(2)A 250Vac T100 5E4 (50,000 Operations) Inrush 50A to EN60065:1998 ៉ Ratings up to 15A, 250Vac ៉ Single and twin gang UL CSA 15A 250Vac (Twin unit is 10A 250Vac)

Contextual Info: MOTOROLA Order this document by 141WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode 141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package

motorola diode marking code

Contextual Info: Order this data sheet by 141WAT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com m on A n ode Silico n Dual S w itc h in g Diode 141WAT1 M1MA142WAT1 Motorola Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode 141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

QPI-6LZ-01

Contextual Info: QPI-6   QUIETPOWER 14 A Active EMI Filter SIP for 48 Vdc Bus Description: Features: The QPI-6 active EMI filter attenuates conducted commonmode CM and differential-mode (DM) noise over the CISPR22 frequency range of 150 kHz to 30 MHz. The product

motorola diode marking code

Abstract: Device marking code 1M diode M1MA142W 141WK diode marking code MU 142WK
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M 1M 141W KT1 M1MA142W KT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the S C -7 0 package

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

LM1MA142WAT1G

Contextual Info: S-LM1MA142WAT3G LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: ON Semiconductort 141WAT1 M1MA142WAT1 Common Anode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low