140NS Search Results

2SK140

Abstract: 2SK1406 t1624
Contextual Info: P o w e r F-MOS FET 2SK1406 2S K 1406 Silicon N-Channel Power F-MOS FET P ackage Dim ensions • Features • • • • Low RRD o„ = 0.32il (typ.) High speed switching tf= 140ns (typ.) Secondary breakdown free High voltage power Unit: mm 5.2max. 15.5max.

IXFK240N15T2

Abstract: IXFX240N15T2 PLUS247
Contextual Info: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Mosfet 75V 120A

Abstract: Power Mosfet 75V 120A IXFN240N15T2
Contextual Info: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

ixfn420n10t

Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
Contextual Info: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

IOL15

Contextual Info: CD4086BMS CD CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate Decem ber 1992 Pinout Features CD4086BMS TOP VIEW • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns OVP. at10V • High Voltage Type 20V Rating) • INHIBIT and ENABLE Inputs *E B& j > in h +EHZECE+ r r

AN541

Abstract: harris AN541
Contextual Info: HA-2540 ÎH HARRIS S E M I C O N D U C T O R 400MHz, Fast Settling Operational Amplifier November 1996 Description Features • Very High Slew R a te . 400V/|xs • Fast Settling T im e . 140ns

HCF4086B

Abstract: HCF4086BEY HCF4086BM1 HCF4086M013TR
Contextual Info: HCF4086B EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE • ■ ■ ■ ■ ■ ■ ■ MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 140ns Typ. at 10V INHIBIT AND ENABLE INPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

Contextual Info: Power F-MOS FET 2SK1406 2SK1406 Silicon N-Channel Power F-MOS FET Package Dim ensions • Features • Low R rd „„ =0 .3 2 n (typ.) Unit: mm • High speed switching tf= 140ns (typ.) 5.2max. 15.5max. 6.9mm. • Secondary breakdown free 3.2- • High voltage power

byp303

Abstract: C67047-A2253-A2 BYP 303
Contextual Info: BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5

CD4076B

Abstract: CD4086BMS IOH15
Contextual Info: CD4086BMS CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate December 1992 Features Pinout • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns Typ. at 10V CD4086BMS TOP VIEW • High Voltage Type (20V Rating) A 1 • INHIBIT and ENABLE Inputs B 2 J = INH + ENABLE +

Contextual Info: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C

2SK2045

Contextual Info: Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=140ns . · Micaless package facilitating easy mounting.

Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFN240N15T2 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

jeida dram 88 pin

Abstract: STI321000C2
Contextual Info: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic

IRS25411

Abstract: SO8 NARROW 156V IRS2540 IRS254 irs25411pbf IRS25401
Contextual Info: LIGHTING High-Voltage Buck Control ICs for Constant LED Current Regulation THE POWER MANAGEMENT LEADER Features: • Micropower Startup less than 500µA • ± 2% voltage reference • 140ns deadtime • PWM Dimmable • Free running frequency • 200V (IRS25401) and 600V (IRS25411)

2SK2045

Abstract: 42871
Contextual Info: Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=140ns . · Micaless package facilitating easy mounting.

Contextual Info: H "» CD4086BMS CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate December 1992 Pinout Features CD4086BMS • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns Typ. at 10V TOP VIEW • High Voltage Type (20V Rating) • INHIBIT and ENABLE Inputs *E • 100% Tested for Quiescent Current at 20V

Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK220N17T2 IXFX220N17T2 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

10 GHz rf delay line

Abstract: PN9000 Aeroflex PN9000 PN9240 PN9712 PN9711 rf delay line PN9710 PN9713 phase shifter
Contextual Info: Tommorrow’s Phase Noise Testing Today PN9000 AUTOMATED PHASE NOISE MEASUREMENT SYSTEM DELAY LINE OPTIONS DELAY LINE DELAY LINE TO RF 50Ω τ =100 INPUT TO LO 50Ω 50Ω TO DL INPUT 50Ω 50Ω φ 50Ω τ=20/140nS TO LO INPUT TO LO 0 dBm Min 50Ω 50Ω

G20N60B3

Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC

G20N60B3D

Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated

G20N60B3

Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050
Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC

140NSF

Contextual Info: 140NSF R Naina Semiconductor Ltd. Fast Recovery Diodes, 140A Features • • • • • Diffused Series Industrial grade Excellent surge capabilities Available in Normal and Reverse polarity Optional Avalanche Characteristic Electrical Specifications (TA = 250C, unless otherwise noted)

HCF4086B

Abstract: HCF4086BEY HCF4086BM1 HCF4086M013TR
Contextual Info: HCF4086B EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE • ■ ■ ■ ■ ■ ■ ■ MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 140ns Typ. at 10V INHIBIT AND ENABLE INPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS