13W TRANSISTOR Search Results

13W TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

13W TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTOR SMD 13W Abstract: CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL Contextual Info: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN99066 replaces previous version AN98091 Philips Semiconductors Philips Semiconductors CFL 13W demo PCB with UBA2021 for Integrated lamp-ballast designs Application Note	Original	UBA2021 AN99066 AN98091) PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) TRANSISTOR SMD 13W CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL	PDF
MAAPGM0077-DIE Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAPGM0077-DIE Rev A Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAPGM0077-DIE is a 2-stage 13W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both	Original	MAAPGM0077-DIE MAAPGM0077-DIE	PDF
POET0078 Abstract: AS1113 POET0072 MO-220-VHHC-2 POET00 IEC61000-4 JESD22-A114 CISPR22 2.5 V, 20 W DC-DC Converter with Synchronous Rectification ethernet transformer center tap Contextual Info: Data Sheet AS1113 13W Powered Device with Integrated DC-DC Controller Revision 1.6, October 2007 DATASHEET AS1113 CONTENTS General	Original	AS1113 2002/95/EC POET0078 AS1113 POET0072 MO-220-VHHC-2 POET00 IEC61000-4 JESD22-A114 CISPR22 2.5 V, 20 W DC-DC Converter with Synchronous Rectification ethernet transformer center tap	PDF
MAAPGM0077-DIE Abstract: AN3016 AN3019 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAP-000077-SMB004 Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAPGM0077-DIE Rev B Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAPGM0077-DIE is a 2-stage 13W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It	Original	MAAPGM0077-DIE MAAPGM0077-DIE AN3016 AN3019 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAP-000077-SMB004	PDF
2sc2783 Contextual Info: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 40W Min. (f=470MHz, V cc = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC2783 470MHz, 2-13C1A 961001EAA2' 2sc2783	PDF
2SC2783 Abstract: VC-80 Series uhf 13W amplifier Contextual Info: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier	PDF
capacitor 4n7 6kv Abstract: 230v ac 5v adapter circuit schematic fqp33n10 equivalent 230V AC primary to 12V, 2A secondary transformer 9162 1.2V regulator transformer 230v to 35v BC184L equivalent QFP33N10 zoom 505 ii schematic 555 ic is output 230v ac Contextual Info: Design Example Report Title 13W Power Supply using TOP242P Input: 195 – 265 VAC Specification Output: 3.3V / 428mA, 2.5V / 215mA, 5V / 985mA, 6.6V / 668mA, 12V / 55mA Application Set Top Box Author Power Integrations Applications Department Document Number	Original	OP242P 428mA, 215mA, 985mA, 668mA, DER-23 EN55022) capacitor 4n7 6kv 230v ac 5v adapter circuit schematic fqp33n10 equivalent 230V AC primary to 12V, 2A secondary transformer 9162 1.2V regulator transformer 230v to 35v BC184L equivalent QFP33N10 zoom 505 ii schematic 555 ic is output 230v ac	PDF
hatfield attenuator Abstract: RF MOSFET MODULE RA13H1317M RA13H1317M-01 RA13H1317M-E01 metwn Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz	Original	RA13H1317M 135-175MHz RA13H1317M 13-watt 175-MHz hatfield attenuator RF MOSFET MODULE RA13H1317M-01 RA13H1317M-E01 metwn	PDF
AS1135 Abstract: schematic diagram 48V power supply Poe QFN PACKAGE thermal resistance smps isolated 24v output 30w JESD22-A114 11-LVMODE led driver pwm 350mA "power sourcing equipment" Contextual Info: Datasheet AS1135 13W/30W 802.3af/at Draft3.3 PoE Powered Device with Integrated DC-DC Controller Version 1.25 December 2008 DATASHEET Preliminary AS1135 TABLE OF CONTENTS TABLE OF CONTENTS . 2	Original	AS1135 3W/30W 2002/95/EC AS1135 schematic diagram 48V power supply Poe QFN PACKAGE thermal resistance smps isolated 24v output 30w JESD22-A114 11-LVMODE led driver pwm 350mA "power sourcing equipment"	PDF
RA13H4452M-01 Abstract: RA13H4452M Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01	PDF
rf power amplifier circuit by 400-470mhz Abstract: RA13H4047M RA13H4047M-01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to	Original	RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz rf power amplifier circuit by 400-470mhz RA13H4047M-01	PDF
RA13H8891MA Abstract: RA13H8891MA-01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to	Original	RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-01	PDF
H11S Abstract: RA13H8891MB-01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to	Original	RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01	PDF
H11S Abstract: RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to	Original	RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz	PDF

RA13H4047M-E01 Abstract: RA13H4047M RA13H4047M-01 rf power amplifier circuit by 400-470mhz Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to	Original	RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz RA13H4047M-E01 RA13H4047M-01 rf power amplifier circuit by 400-470mhz	PDF
PC8610 Abstract: microprocessor Contextual Info: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)	Original	PC8610 0926Bâ PC8610 microprocessor	PDF
hatfield attenuator Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz	Original	RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz hatfield attenuator RF MOSFET MODULE RA13H3340M-01 RA13H3340M-E01	PDF
RA13H4452M-01 Abstract: hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M RA13H4452M-E01 RF POWER amplifier 10 watt Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz	Original	RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01 hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M-E01 RF POWER amplifier 10 watt	PDF
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYPE DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in H F band mobile radio applications. FEATURES • High power gain: Gpe > 1 4 d B • @f = 27M H z, V cc = 12V , P0 = 13W	OCR Scan	2SC3133 2SC3133	PDF
H11S Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to	Original	RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz H11S RA13H8891MA-01 RA13H8891MA-E01	PDF
RA13H1317M Abstract: RA13H1317M-01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to	Original	RA13H1317M 135-175MHz RA13H1317M 13-watt 175-MHz RA13H1317M-01	PDF
RA13H3340M Abstract: RA13H3340M-01 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to	Original	RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz RA13H3340M-01	PDF
POET0072 Contextual Info: AS1113 — 13W Powered Device with Integrated DC-DC Controller GENERAL DESCRIPTION FEATURES The AS1113 is a single-chip, highly integrated CMOS solution for Power over Ethernet PoE . Applications include Voice over IP (VoIP) Phones, Wireless LAN Access Point, Security and Web	Original	AS1113 AS1113 2002/95/EC POET0072	PDF
RA13H4047M Abstract: RA13H4047M-101 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to	Original	RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz RA13H4047M-101	PDF

13W TRANSISTOR Search Results

13W TRANSISTOR Result Highlights (5)

13W TRANSISTOR Datasheets Context Search

TRANSISTOR SMD 13W

MAAPGM0077-DIE

POET0078

MAAPGM0077-DIE

2sc2783

2SC2783

capacitor 4n7 6kv

hatfield attenuator

AS1135

RA13H4452M-01

rf power amplifier circuit by 400-470mhz

RA13H8891MA

H11S

H11S

RA13H4047M-E01

PC8610

hatfield attenuator

RA13H4452M-01

H11S

RA13H1317M

RA13H3340M

POET0072

RA13H4047M