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    13N6 Search Results

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    STMicroelectronics STD13N65M2

    Transistor: N-MOSFET; MDmesh™ M2; 650V; 10A; 110W; DPAK
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    TME STD13N65M2 12,500 2,500
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    Mouser Electronics STD13N65M2 3,016
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    STMicroelectronics STD13N65M2 3,016 1
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    Ameya Holding Limited STD13N65M2 2,580
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    EBV Elektronik STD13N65M2 12,500 27 Weeks 2,500
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    Win Source Electronics STD13N65M2 50,704
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    Abracon Corporation ATFC-0201-3N6B-T

    Inductor: ceramic; SMD; 0201; 3.6nH; -25÷85°C
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    TME ATFC-0201-3N6B-T 10,000 10,000
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    Avnet Americas ATFC-0201-3N6B-T Tape & Reel 14 Weeks 10,000
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    Braemac Americas-Symmetry ATFC-0201-3N6B-T 1
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    Master Electronics ATFC-0201-3N6B-T
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    STMicroelectronics STL13N60M6

    Transistor: N-MOSFET; MDmesh™ M6; 600V; 7A; 52W; PowerFLAT 5x6
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    TME STL13N60M6 3,000 3,000
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    Avnet Americas STL13N60M6 Tape & Reel 36 Weeks 3,000
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    Mouser Electronics STL13N60M6 2,784
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    STMicroelectronics STL13N60M6 2,784 1
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    ComSIT USA STL13N60M6 2,600
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    Avnet Silica STL13N60M6 25 Weeks 3,000
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    EBV Elektronik STL13N60M6 3,000 25 Weeks 3,000
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    STMicroelectronics STD13N60M2

    Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD
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    TME STD13N60M2 1,597 1
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    Avnet Americas STD13N60M2 Tape & Reel 36 Weeks 2,500
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    Mouser Electronics STD13N60M2
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    Newark () STD13N60M2 Cut Tape 792 1
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    STMicroelectronics STD13N60M2 1
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    Bristol Electronics STD13N60M2 2,570 1
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    Rochester Electronics STD13N60M2 17,500 1
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    Ameya Holding Limited STD13N60M2 2,580
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    Avnet Silica STD13N60M2 27 Weeks 2,500
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    EBV Elektronik STD13N60M2 2,500 27 Weeks 2,500
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    Maritex STD13N60M2 1,975 1
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    Win Source Electronics STD13N60M2 61,000
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    STMicroelectronics STB13N60M2

    Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD
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    TME STB13N60M2 963 1
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    Mouser Electronics STB13N60M2
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    Newark () STB13N60M2 Cut Tape 992 1
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    STB13N60M2 Tape & Reel 992 100
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    STMicroelectronics STB13N60M2 1
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    Bristol Electronics STB13N60M2 1,000
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    Chip 1 Exchange STB13N60M2 454
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    Avnet Silica STB13N60M2 2,000 25 Weeks 1,000
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    13N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6951/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6951/s35a680nm PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a680nm PDF

    Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13n60c5mo-22020080310b PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis photo general data type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a680nm PDF

    ABB s

    Contextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


    Original
    13n65005sya1035-0465echanicalch-5600+1abb s PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a PDF

    SGW13N60UFD

    Contextual Info: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan
    sgw13n60ufd PDF

    gate turn-off

    Contextual Info: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •


    Original
    13n65005sya1035-03ch-5600gate turn-off PDF

    13n60c

    Abstract: 13n60
    Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original
    13n60c5o-22020090209c13n60c+113n60 PDF

    MA660

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original
    13n60c5mo-220ma660 PDF

    Contextual Info: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original
    13n60c5o-247o-22020080310a PDF

    13n60c

    Abstract: 13N60
    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13n60c5mo-22020090209d13n60c+113n60 PDF

    13N60

    Abstract: 13N60C5M
    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13n60c5mo-22020080523c13n60 PDF

    13N60C5

    Abstract: 13N60 13n60c
    Contextual Info: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original
    13n60c5o-247o-22013n60+113n60c PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6951/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6951/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6901/s35a PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original
    13n6951/s35a PDF

    SGW13N60UF

    Contextual Info: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan
    sgw13n60uf PDF

    ABB thyristor 5

    Abstract: abb s 212 ABB thyristor 13N6
    Contextual Info: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Ω Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original
    13n65005sya1035-0313n620013n5800+5ch-5600abb thyristor 5abb s 212abb thyristor13n6 PDF