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    13N6 Search Results

    13N6 Datasheets (1)

    AK Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 13N65A
    		AK Semiconductor 13A 650V N-channel MOSFET with low on-resistance of 0.52 ohm typical at VGS=10V, TO-220FG package, suitable for high-speed switching applications. Original PDF
    SF Impression Pixel

    13N6 Price and Stock

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    Rochester Electronics LLC SGP13N60UFDTU

    IGBT 600V 13A TO-220-3
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    DigiKey SGP13N60UFDTU Tube 9,677 157
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    STMicroelectronics STD13N60DM2

    MOSFET N-CH 600V 11A DPAK
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    DigiKey () STD13N60DM2 Digi-Reel 4,323 1
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    STD13N60DM2 Tape & Reel 2,500 2,500
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    Avnet Americas () STD13N60DM2 Ammo Pack 1
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    STD13N60DM2 Bulk 18 Weeks 2,500
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    Mouser Electronics () STD13N60DM2 3,109
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    Avnet Silica STD13N60DM2 19 Weeks 2,500
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    Rochester Electronics LLC FCP13N60N

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FCP13N60N Bulk 3,541 107
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    Rochester Electronics LLC SGP13N60UFTU

    IGBT 600V 13A TO-220-3
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    DigiKey SGP13N60UFTU Tube 2,764 826
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    MINEWSEMI MS21SF1-3N68AIR

    RF 868/915MHZ LORA MODULE
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    DigiKey MS21SF1-3N68AIR Tape & Reel 1,804 1
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    13N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A 680nm PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A 680nm PDF

    Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20080310b PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis photo general data type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A 680nm PDF

    ABB s

    Contextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


    Original     		13N6500 5SYA1035-04 13N6500 65echanical CH-5600 ABB s PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    SGW13N60UFD

    Contextual Info: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW13N60UFD SGW13N60UFD PDF

    gate turn-off

    Contextual Info: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •


    Original     		13N6500 5SYA1035-03 CH-5600 gate turn-off PDF

    13n60c

    Abstract: 13n60
    Contextual Info: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		13N60C5 O-220 20090209c 13n60c 13n60 PDF

    MA660

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 MA660 PDF

    Contextual Info: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original     		13N60C5 O-247 O-220 20080310a PDF

    13n60c

    Abstract: 13N60
    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20090209d 13n60c 13N60 PDF

    13N60

    Abstract: 13N60C5M
    Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20080523c 13N60 13N60C5M PDF

    13N60C5

    Abstract: 13N60 13n60c
    Contextual Info: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original     		13N60C5 13N60C5 O-247 O-220 13N60 13n60c PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    SGW13N60UF

    Contextual Info: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW13N60UF SGW13N60UF PDF

    ABB thyristor 5

    Abstract: abb s 212 ABB thyristor 13N6
    Contextual Info: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Ω Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original     		13N6500 5SYA1035-03 13N6200 13N5800 CH-5600 ABB thyristor 5 abb s 212 ABB thyristor 13N6 PDF