13N6 Search Results
13N6 Price and Stock
STMicroelectronics STD13N65M2Transistor: N-MOSFET; MDmesh™ M2; 650V; 10A; 110W; DPAK |
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STD13N65M2 | 12,500 | 2,500 |
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STD13N65M2 | 3,016 |
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STD13N65M2 | Tape & Reel | 2,119 | 100 |
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| STD13N65M2 | Cut Tape | 2,119 | 1 |
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STD13N65M2 | 3,016 | 1 |
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STD13N65M2 | 2,580 |
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STD13N65M2 | 12,500 | 27 Weeks | 2,500 |
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STD13N65M2 | 50,704 |
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Abracon Corporation ATFC-0201-3N6B-TInductor: ceramic; SMD; 0201; 3.6nH; -25÷85°C |
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ATFC-0201-3N6B-T | 10,000 | 10,000 |
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ATFC-0201-3N6B-T | Tape & Reel | 14 Weeks | 10,000 |
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ATFC-0201-3N6B-T | 1 |
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ATFC-0201-3N6B-T |
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STMicroelectronics STL13N60M6Transistor: N-MOSFET; MDmesh™ M6; 600V; 7A; 52W; PowerFLAT 5x6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STL13N60M6 | 3,000 | 3,000 |
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STL13N60M6 | Tape & Reel | 36 Weeks | 3,000 |
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STL13N60M6 | 2,784 |
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STL13N60M6 | 2,784 | 1 |
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STL13N60M6 | 2,600 |
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STL13N60M6 | 25 Weeks | 3,000 |
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STL13N60M6 | 3,000 | 25 Weeks | 3,000 |
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STMicroelectronics STD13N60M2Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; DPAK; ESD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD13N60M2 | 1,597 | 1 |
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STD13N60M2 | Tape & Reel | 36 Weeks | 2,500 |
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STD13N60M2 |
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STD13N60M2 | Cut Tape | 792 | 1 |
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| STD13N60M2 | Tape & Reel | 792 | 100 |
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STD13N60M2 | 1 |
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STD13N60M2 | 2,570 | 1 |
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STD13N60M2 | 17,500 | 1 |
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STD13N60M2 | 2,580 |
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STD13N60M2 | 27 Weeks | 2,500 |
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STD13N60M2 | 2,500 | 27 Weeks | 2,500 |
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STD13N60M2 | 1,975 | 1 |
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STD13N60M2 | 61,000 |
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STMicroelectronics STB13N60M2Transistor: N-MOSFET; unipolar; 600V; 7A; 110W; D2PAK; ESD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STB13N60M2 | 963 | 1 |
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STB13N60M2 |
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STB13N60M2 | Cut Tape | 992 | 1 |
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| STB13N60M2 | Tape & Reel | 992 | 100 |
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STB13N60M2 | 1 |
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STB13N60M2 | 1,000 |
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STB13N60M2 | 454 |
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STB13N60M2 | 2,000 | 25 Weeks | 1,000 |
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13N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6901/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6901/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6951/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6951/s35a680nm | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6901/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6901/s35a680nm | |
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Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions |
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13n60c5mo-22020080310b | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis photo general data type background suppression light source pulsed red laser diode |
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13n6901/s35a680nm | |
ABB sContextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer Patented free-floating silicon technology |
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13n65005sya1035-0465echanicalch-5600+1 | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
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13n6901/s35a | |
SGW13N60UFDContextual Info: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters |
OCR Scan |
sgw13n60ufd | |
gate turn-offContextual Info: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • |
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13n65005sya1035-03ch-5600gate turn-off | |
13n60c
Abstract: 13n60
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13n60c5o-22020090209c13n60c+1 | |
MA660Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions |
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13n60c5mo-220ma660 | |
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Contextual Info: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol |
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13n60c5o-247o-22020080310a | |
13n60c
Abstract: 13N60
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13n60c5mo-22020090209d13n60c+1 | |
13N60
Abstract: 13N60C5M
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13n60c5mo-22020080523c13n60 | |
13N60C5
Abstract: 13N60 13n60c
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13n60c5o-247o-22013n60+1 | |
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Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
13n6951/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
13n6951/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
13n6901/s35a | |
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Contextual Info: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode |
Original |
13n6951/s35a | |
SGW13N60UFContextual Info: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters |
OCR Scan |
sgw13n60uf | |
ABB thyristor 5
Abstract: abb s 212 ABB thyristor 13N6
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13n65005sya1035-0313n620013n5800+5 | |