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    ABB thyristor 5

    Abstract: abb s 212 ABB thyristor 13N6
    Contextual Info: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Ω Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original     		13n65005sya1035-0313n620013n5800+5ch-5600abb thyristor 5abb s 212abb thyristor13n6 PDF

    13N6500

    Abstract: Bidirectional control thyristor 13n65
    Contextual Info: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications


    Original     		13n65005sya1035-0313n620013n5800+3ch-5600bidirectional control thyristor13n65 PDF

    13n65

    Contextual Info: Key Parameters VSM = 6500 ITAVM = 1390 ITRMS = 2182 ITSM = 22000 VT0 = 1.20 rT = 0.600 Bi-Directional Control Thyristor V A A A V mΩ 5STB 13N6500 Doc. No. 5SYA 1035-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology


    Original     		13n650013n620013n5800ch-5600+113n65 PDF