13N50 Search Results

13n50

Abstract: IXYS DS 145 MAX1352
Contextual Info: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20

Contextual Info: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions V A W ns Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous

13N50

Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: Power MOSFET IXTC 13N50 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50K Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

Contextual Info: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient

IXTH12N50A

Abstract: 13N50 1M500
Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ISOPLUS 220TM Symbol Test Conditions Maximum Ratings

13N50

Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and

8140115

Abstract: 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G
Contextual Info: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 2 — 9 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.

13N50

Abstract: .15 k 250
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

13N50

Abstract: 8140115 nxp marking code M2
Contextual Info: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400

104 k5k capacitor

Abstract: k5k 104 capacitor 104 capacitor k5k ibm thinkpad t42 bmdc ibm thinkpad t40 ibm t42 M1E wireless ibm t40 lcd 1802 dfx
Contextual Info: IBM Mobile Systems ThinkPad Computer Hardware Maintenance Manual August 2004 This manual supports: ThinkPad T40/T40p, T41/T41p, T42/T42p MT 2373/2374/2375/2376/2378/2379 ThinkPad Dock II (MT 2877) Note Before using this information and the product it supports, be sure to read the general information

13n50c

Contextual Info: TM 13N50C/13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

mm036

Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

13N50

Abstract: VDD25 MTN13N50FP
Contextual Info: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C405FP Issued Date : 2008.12.01 Revised Date : 2009.04.20 Page No. : 1/8 BVDSS : 500V RDS ON : 0.48Ω 13N50FP ID : 13A Description The 13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best

810 souriau

Abstract: ATC100B RO4350 souriau 810
Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

BLS2933-100

Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
Contextual Info: BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor at a supply voltage of 32 V for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.