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    13N50; Search Results

    13N50; Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 13N50A
    		AK Semiconductor 13N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 13A continuous drain current, 0.35 ohm typical on-resistance at 10V gate-source voltage, and TO-220F or TO-220C package. Original PDF
    badge SLF13N50A
    		Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm RDS(on) at VGS = 10V, low gate charge of 19.1nC, and 4.6pF Crss, suitable for high efficiency power conversion applications. Original PDF
    badge SLF13N50U
    		Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.40 ohm typical RDS(on) at VGS = 10V, low gate charge of 35nC, and fast switching performance suitable for high-efficiency power applications. Original PDF
    badge SLP_F13N50A
    		Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. Original PDF
    badge MDD13N50F
    		Microdiode Semiconductor 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 13A, RDS(on),max 0.52Ω@VGS=10V, Qg,typ 37nC, TO-220F-3L. Original PDF
    badge SL13N50FS
    		SLKOR Original PDF
    badge JMPC13N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge JMPF13N50BJ
    		Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge SLT13N50A
    		Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.52 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and TO-252 package for high efficiency power applications. Original PDF
    badge SLF13N50C
    		Maplesemi SLP13N50C and SLF13N50C are 500V, 13A N-channel MOSFETs with a typical RDS(on) of 386 mΩ at VGS = 10V, low gate charge of 44nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. Original PDF
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    13N50; Price and Stock

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    Rochester Electronics LLC FDPF13N50FT

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FDPF13N50FT Bulk 22,039 200
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    Rochester Electronics LLC FQPF13N50C

    QFC 500V 480MOHM TO220F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQPF13N50C Tube 15,735 158
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    Diodes Incorporated ZXT13N50DE6TA

    TRANS NPN 50V 4A SOT-26
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    DigiKey () ZXT13N50DE6TA Cut Tape 14,949 1
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    ZXT13N50DE6TA Tape & Reel 12,000 3,000
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    Avnet Americas ZXT13N50DE6TA Tape & Reel 40 Weeks 3,000
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    Mouser Electronics () ZXT13N50DE6TA 3,090
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    • 10 $0.68
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    ZXT13N50DE6TA 3,089
    • 1 $1.09
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    • 100 $0.45
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    RS ZXT13N50DE6TA Bulk 10
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    Bristol Electronics ZXT13N50DE6TA 597
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    NexGen Digital ZXT13N50DE6TA 5,960
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    Avnet Asia ZXT13N50DE6TA 40 Weeks 3,000
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    Avnet Silica ZXT13N50DE6TA 42 Weeks 3,000
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    Win Source Electronics ZXT13N50DE6TA 30,000
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    • 1000 $0.29
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    Rochester Electronics LLC FQI13N50CTU

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FQI13N50CTU Bulk 14,185 186
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    Rochester Electronics LLC FQA13N50C

    MOSFET N-CH 500V 13.5A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQA13N50C Tube 8,702 117
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