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    13N50; Search Results

    13N50; Datasheets (10)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 13N50A
    AK Semiconductor 13N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 13A continuous drain current, 0.35 ohm typical on-resistance at 10V gate-source voltage, and TO-220F or TO-220C package. Original PDF
    badge SLF13N50U
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.40 ohm typical RDS(on) at VGS = 10V, low gate charge of 35nC, and fast switching performance suitable for high-efficiency power applications. Original PDF
    badge SLP_F13N50A
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. Original PDF
    badge SLF13N50A
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm RDS(on) at VGS = 10V, low gate charge of 19.1nC, and 4.6pF Crss, suitable for high efficiency power conversion applications. Original PDF
    badge SL13N50FS
    SLKOR Original PDF
    badge JMPC13N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge MDD13N50F
    Microdiode Semiconductor 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 13A, RDS(on),max 0.52Ω@VGS=10V, Qg,typ 37nC, TO-220F-3L. Original PDF
    badge SLT13N50A
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.52 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and TO-252 package for high efficiency power applications. Original PDF
    badge JMPF13N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. Original PDF
    badge SLF13N50C
    Maplesemi SLP13N50C and SLF13N50C are 500V, 13A N-channel MOSFETs with a typical RDS(on) of 386 mΩ at VGS = 10V, low gate charge of 44nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. Original PDF
    SF Impression Pixel

    13N50; Price and Stock

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    Diodes Incorporated ZXT13N50DE6TA

    TRANS NPN 50V 4A SOT-26
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    DigiKey () ZXT13N50DE6TA Cut Tape 65,969 1
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    ZXT13N50DE6TA Digi-Reel 65,969 1
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    ZXT13N50DE6TA Reel 64,975 3,000
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    Avnet Americas ZXT13N50DE6TA Reel 12 Weeks 3,000
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    Mouser Electronics ZXT13N50DE6TA 4,005
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    Bristol Electronics ZXT13N50DE6TA 597
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    Win Source Electronics ZXT13N50DE6TA 30,000
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    onsemi FQPF13N50CF

    MOSFET N-CH 500V 13A TO220F
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    DigiKey FQPF13N50CF Tube 831 1
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    Mouser Electronics FQPF13N50CF 855
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    Newark () FQPF13N50CF Bulk 1,000 50
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    FQPF13N50CF Bulk 150
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    Rochester Electronics FQPF13N50CF 4 1
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    TME FQPF13N50CF 40 1
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    Richardson RFPD FQPF13N50CF 1,000
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    Avnet Asia FQPF13N50CF 9 Weeks 1,000
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    Avnet Silica FQPF13N50CF 550 10 Weeks 50
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    Chip Stock FQPF13N50CF 155
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    EBV Elektronik FQPF13N50CF 11 Weeks 50
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    onsemi FQA13N50CF

    MOSFET N-CH 500V 15A TO3PN
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    DigiKey FQA13N50CF Tube 400 1
    • 1 $4.60
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    Vishay Intertechnologies IRFB13N50APBF

    MOSFET N-CH 500V 14A TO220AB
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    DigiKey IRFB13N50APBF Tube 20 1
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    Bristol Electronics IRFB13N50APBF 66
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    TTI IRFB13N50APBF Tube 150 50
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    TME IRFB13N50APBF 1
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    Chip Stock IRFB13N50APBF 4,281
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    HUBER+SUHNER 13_N-50-0-1-133_NE

    13_N-50-0-1/133_NE
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    DigiKey 13_N-50-0-1-133_NE Bulk 14 1
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