13N1 Search Results

Contextual Info: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions

Contextual Info: □ IXYS IXTH 13N110 MegaMOS FET Vd s s D25 D DS on = 1100 V* = 13 A = 0.92 Q N-Channel Enhancement Mode éi Maximum Ratings Symbol TestC onditions V DSS Td = 25°C to 150°C 1100 V v DGR Td = 25°C to 150°C; RGS = 1 M£i 1100 V V GS Continuous ±20 V

13N100

Abstract: 10N100 13n10
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM

13N110

Contextual Info: IXTH 13N110 VDSS MegaMOSTMFET ID25 RDS on = 1100 V = 13 A = 0.92 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1100 V VGS Continuous ±20 V

IXYS DS 145

Abstract: 13N100
Contextual Info: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS

Contextual Info: IXTH 13N110 VDSS MegaMOSTMFET ID25 RDS on = 1100 V = 13 A = 0.92 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1100 V VGS Continuous ±20 V VGSM Transient ±30

4715-01

Contextual Info: 13N1649NC 13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency

DQ45-A

Abstract: 033J1
Contextual Info: 13N1649NC 13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle

Contextual Info: . 13N16644JCA 13N16734JCA 16M x 64/72 One-Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • Intended for PC133 applications • Clock Frequency: 133MHz • Clock Cycle: 7.5ns • Clock Assess Time: 5.4ns

kingston memory schematic

Abstract: EMC 2428 power supply connector 21x4x EBSA-285 pc motherboard schematics kmm366s203b intel schematics
Contextual Info: DIGITAL Semiconductor EBSA-285 Evaluation Board Reference Manual Order Number: EC–R6M5B–TE The EBSA-285 is an evaluation board for the SA-110 StrongARM microprocessor and the 21285 Core Logic controller. The evaluation board is a PCI card that can be used in various configurations.

1SCA022

Abstract: OESA630DV12PL oesa 630 OS25F1210 1SCA022434R7810 OS160D 1SCC311006C0201 OS125D OESA630D3PL 1SCA022716R0180
Contextual Info: Low Voltage Products Fusegear, PowerLine switch fuses OS and OESA Switch fuses 16.80 DIN AC23/400V OS16D OS35D 7.5 kW 15 kW OS40D 15 kW OS32D OS63D 18.5 kW 15 kW OS125D OS160D 30 kW 55 kW OS200D 75 kW OS250D 110 kW BS AC23/415V OS20B OS32B 7.5 kW 15 kW OS32B OS63B

multiple SHT11 interface

Abstract: EBSA-285 21x4x kingston memory schematic
Contextual Info: DIGITAL Semiconductor EBSA-285 Evaluation Board Reference Manual Order Number: EC–R6M5B–TE The EBSA-285 is an evaluation board for the SA-110 StrongARM microprocessor and the 21285 Core Logic controller. The evaluation board is a PCI card that can be used in various configurations.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: . 13N16644JCA 13N16734JCA 16M x 64/72 One-Bank Unbuffered SDRAM Module Preliminary Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • Intended for PC133 applications • Clock Frequency: 133MHz • Clock Cycle: 7.5ns • Clock Assess Time: 5.4ns

10N100

Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C

Contextual Info: IXYS HiPerFET Power MOSFETs ^D25 IX F H / IX F M 10 N 1 0 0 1000 V 10 A 1 .2 0 Q IX F H / I X F M 12 N 1 0 0 1000 V 12 A 1 .0 5 Q IX F H 1 3 N 1 0 0 1000 V 1 2 .5 A 0 .9 0 Q N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions

Contextual Info: 13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: 13N1649NC 13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 1 Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency • • • • • • -10 3 jfc K Clock Frequency

Contextual Info: 13N1649NC 13N1809NC 1M X 64/80 1 B ank U nbuffered S D R A M M odule Features 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM Performance: -10 CAS Latency I fcK ! t CK i Clock Frequency i Clock 100

3000 watts subwoofer circuit diagram

Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION

13n10

Abstract: 13N10 mosfet NTP13N10
Contextual Info: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

TP2350B

Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS

ADQ36

Contextual Info: = =¥= = — = ’= 13N1649NC 13N1809NC Preliminary 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: 10 CAS Latency