13MAY02 Search Results
13MAY02 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
521-9214Contextual Info: TH IS DRAWING IS U N P U B LIS H E D . C COPYRIGHT R ELEASED FOR PUBLICATIO N BY TYCO ELECTRONICS CORPORATION. - - LOC R EVISIO N : D I5 T EH 00 A LL RIGHTS R E S E R V E D . LTR c D E SC R IPTIO N REV/EC —OB 10 —0 0 8 1 —02 DATE DWN APVD 13MAY02 |
OCR Scan |
13may02mar20521-9214 | |
M48T212V
Abstract: M48T212Y M4TXX-BR12SH MTD20P06HDL SOH44
|
Original |
m48t212ym48t212v44-lead44-pin+3 | |
M40Z300
Abstract: M40Z300W M4ZXX-BR00SH SOH28
|
Original |
m40z300m40z300wm4zxx-br00shsoh28 | |
SMPS CIRCUIT DIAGRAM 12v 5v
Abstract: flyback smps CMPD2836 Si4812DY Si9137 Si9137DB Si9137LG SSOP-28 5v pc smps pwm design SMPS CIRCUIT DIAGRAM for computers
|
Original |
si9137300-khz/30-ma28-pin+11 | |
"MARKING CODE L5"
Abstract: BAT60WS
|
Original |
bat60wsod-32330k/box100ma+2 | |
Si8900EDBContextual Info: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B |
Original |
275-mmsi8900edb-t210-sprocket93-5211-x+5 | |
Si9169BQ-T1
Abstract: Si9169DQ-T1 TSSOP-20 Si9165 Si9169 si91
|
Original |
si9169200-mas-20675--rev13-may-02+5 | |
|
Contextual Info: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET |
Original |
si8902edb8902e63sn/37pbs-20616--rev+1 | |
s6 general semiconductor
Abstract: General Semiconductor diode marking s6 diode s6 650 General Semiconductor general semiconductor s6 GENERAL SEMICONDUCTOR MARKING s6 marking code DIODE d6 SD103CWS surge diode marking code d6 Vishay s6
|
Original |
sd103awssd103cwsod-323sd103+12 | |
30V 200mA schottky barrier diode
Abstract: General Semiconductor minimelf diodes color ALL103A 10V Schottky Diode LL103A LL103B LL103C SD103A SD103AW
|
Original |
ll103all103cdo-35sd103a+9 | |
|
Contextual Info: TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. r— CONTACT REV 1SIONS D I ST 47 p LTR W A A A A A v 0.76cm MI N GOLD OVER RELEASED PER OU1B- 0 15 8- 0 0 |
OCR Scan |
y2001040ct200ii3jun0013may02+3 | |
minimelf diodes color
Abstract: BAT41 equivalent glass diode color codes BAT41 LL41
|
Original |
od-80cdo-35bat41d1/10k+7 | |
M48T201V-85MH1FContextual Info: M48T201Y M48T201V 5.0 or 3.3V TIMEKEEPER Supervisor FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ CONVERTS LOW POWER SRAM INTO NVRAMs YEAR 2000 COMPLIANT BATTERY LOW FLAG INTEGRATED REAL TIME CLOCK, POWERFAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL |
Original |
m48t201ym48t201v44-lead85mh1e+1 | |
|
Contextual Info: 1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g |
Original |
1n4454do-204ahdo-35150ma+4 | |
|
|
|||
BAT85
Abstract: BAS85 DO-204AH
|
Original |
bat85do-204ahdo-35bas85+3 | |
88109
Abstract: 1N4448 1N4448W IMBD4448 LL4448
|
Original |
1n4448w150maod-123do-35+6 | |
8p8c jack filter
Abstract: RJ45 8P8C
|
Original |
-35db100mhz13may028p8c jack filter+1 | |
|
Contextual Info: Si4724CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D D 4.5- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.0105 W @ VDD = 4.5 V |
Original |
si4724cys-20628--rev13-may-02 | |
Vishay Diode SOD-123
Abstract: 1N4150 1N4150W LL4150 marking code A4 Switching diode 50V 200mA
|
Original |
1n4150wod-123d3/10k30k/box+7 | |
General Semiconductor
Abstract: SD101C SD101A SD101AW SD101CW DO-204AH LL101 LL101A LL101C
|
Original |
sd101asd101cll101od-123+7 | |
|
Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 BY TYCO E L E C T R O N I C S R E L E A S E D FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. REV 1SIONS D I ST 47 p LTR MI N GOL D OVER N T I N-LEAD MATERIAL: CONTACT O T Y :50 |
OCR Scan |
27jjm13my2i7mar2000 | |
|
Contextual Info: TH 1 S DRAW 1NG C 1S U N P U B L 1SHED. C O P Y R I G H T 20 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L RIGHTS LOC RE S E RV E D. r— C O N T A C T AREA TYP I CA L U \r — r— AD \f — n |
OCR Scan |
||
|
Contextual Info: 2 TH I S DRAW ING IS U NP UBL I S HE D. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O P Y R I G H T 20 CORPORATION. ALL RIGHTS LOC AD RE S E RV E D. REV 1SI ONS D I ST 47 p LTR D E S C R 1P T I O N RELEASED PER OU1B- 0 1 5 8 - 0 0 |
OCR Scan |
||
1N4151
Abstract: 1N4151W LL4151 88107 general semiconductor
|
Original |
1n4151wod-123do-351n4151+4 | |