13INCH Search Results

Contextual Info: Monolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8mm Tape and Reel 3 Use BAW156LT1 to order the 7 inch/3,000 unit reel Use BAW156LT3 to order the 13inch/10,000 unit reel

TC25

Contextual Info: 12NC CROSS REFERENCE 12NC to part number cross reference I 12NC to part num ber cross reference Description P/N 12NC General 0603 5% Reel 13inch 232270292002 RC21 General 0603 5% Reel (7inch) 232270296001 RC21 RC21 General 0603 5% Reel (10inch) 232270297001

Contextual Info: PART NUMBER CROSS REFERENCE Part number to 12NC cross reference 1 Part number to 12NC cros s reterence Description 12NC P/N General 1206 5% Reel 7inch 232271161. RC01 232271151. General 1206 5% Reel dOinch) RC01 232271181. General 1206 5% Reel (13inch)

Contextual Info: CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated

Contextual Info: CSD17312Q5 www.ti.com SLPS256A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17312Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance

M0139-01

Abstract: M0137-02 P0093-01
Contextual Info: CSD16410Q5A www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16410Q5A FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

OVM7692-RYAA

Abstract: OVM7962 OVM7692 camera edge correction defective pixel correction OVM7692-RAAA DVP MIPI SCCB ovm769 MDN 640
Contextual Info: OVM7692 lead free available in a lead-free package 640 x 480 CameraCubeChip product brief Feature-Rich VGA CameraCubeChip™ for Mobile and Picture Phone Applications The OVM7692 VGA CameraCubeChip delivers proven performance and an extended feature set in an ultracompact size to meet the performance and manufacturing

SLUP100

Abstract: texas instruments of ic 74 ls 83 M-018
Contextual Info: CSD87351Q5D SLPS287D – MARCH 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD87351Q5D NexFET™ power block is an optimized design for synchronous buck applications

Contextual Info: CSD18504Q5A www.ti.com SLPS366 – JUNE 2012 40V N-Channel NexFET Power MOSFETs Check for Samples: CSD18504Q5A FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating

SOX28

Abstract: KDS Crystals DOC KDS Crystals through hole
Contextual Info: M41ST87Y M41ST87W 5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM Features Embedded crystal • 5.0, 3.3, or 3.0 V operation ■ 400 kHz I2C bus ■ NVRAM supervisor to non-volatize external

CSD16325Q5

Abstract: G003
Contextual Info: CSD16325Q5 www.ti.com SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16325Q5 FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

sunnix6

Contextual Info: Rev : ISSUE NO : DATE OF ISSUE : 2010. 01. 05 SPECIFICATION MODEL : SPHWHTS6D313S0V1W3 [Rank : VF S1, S2 , CIE(V1), ΦV(W1, X1, Y1)] HIGH POWER LED - SUNNIX6 CUSTOMER : CHECKED CHECKED APPROVED SAMSUNG LED DRAWN CHECKED(Sales) CHECKED(Quality) APPROVED SAMSUNG LED CO,.LTD.

Contextual Info: Rev : 00 ISSUE NO : DATE OF ISSUE : 2009. 04. 13 SPECIFICATION MODEL : SLHNNRO521N0S0Q0E3 [Rank : S0 , (Q1, Q2), (E1, F1, G1)] HIGH POWER LED - SUNNIX5 CUSTOMER : CUSTOMER CHECKED CHECKED APPROVED SAMSUNG LED DRAWN CHECKED(Sales) CHECKED(Quality) APPROVED

CSD16406Q3

Abstract: G003
Contextual Info: CSD16406Q3 www.ti.com SLPS202A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16406Q3 FEATURES 1 • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

adi REEL label

Contextual Info: Rev : ISSUE NO : DATE OF ISSUE : 2010. 01. 05 SPECIFICATION MODEL : SPHWHTS6D303S0R0W4 [Rank : VF S1, S2 , CIE(R0), ΦV(W1, X1, Y1, Z1)] HIGH POWER LED - SUNNIX6 CUSTOMER CHECKED CHECKED APPROVED SAMSUNG LED DRAWN CHECKED(Sales) CHECKED(Quality) SAMSUNG LED CO,.LTD.

AD629

Abstract: AD629A AD629B INA117KU INA117P OP177 Amplifier thermocouple op177 AD5901 AD590 APPLICATIONS AD629ARZ-RL
Contextual Info: High Common-Mode Voltage, Difference Amplifier AD629 FUNCTIONAL BLOCK DIAGRAM Improved replacement for: INA117P and INA117KU ±270 V common-mode voltage range Input protection to ±500 V common mode ±500 V differential mode Wide power supply range ±2.5 V to ±18 V

sunnix6

Contextual Info: Rev : ISSUE NO : DATE OF ISSUE : 2010. 03.17 SPECIFICATION MODEL : SPHWHTS6D313S0W1W3 [Rank : VF S1, S2 , CIE(W1), ΦV(W1, X1, Y1)] HIGH POWER LED - SUNNIX6 CUSTOMER : CHECKED CHECKED APPROVED SAMSUNG LED DRAWN CHECKED(Sales) CHECKED(Quality) APPROVED SAMSUNG LED CO,.LTD.

samsung LED

Abstract: SPMRDT3225A0 Date code samsung resistors jedec jesd22-a108 lot date code samsung JESD22-A101 JESD22-A108 JESD22-A113 samsung resistors AEC-Q101
Contextual Info: Rev: ISSUE NO : DATE OF ISSUE : 2010. 06. 07 Contents SPECIFICATION 1. Product Outline MODEL : SPMRDT3225A0 - 2. Absolute Maximum Rating Approved rank : VF E1,E2,E3,E4 , λD(C1,C2), IV(CB,DA,DB) 3. Characteristics - 3

CM05 capacitor SERIES

Abstract: 3216 ceramic capacitor recommendable land CM05 capacitor KYOCERA CM05 surface Capacitor 47uf 100V 1210 x7r Kyocera CM316 capacitor 1005 x7r 3Kp Transistor CT21 1005 X7S 153
Contextual Info: Multilayer Ceramic Chip Capacitors Kyocera's series of Multilayer Ceramic Chip Capacitors are designed to meet a wide variety of needs. We offer a complete range of products for both general and specialized applications, including the general-purpose CM series, the high-voltage CF series , the low profile CT

Contextual Info: S98WS256PD0-003 Stacked Multi-chip Product MCP 256 Mbit (16 M x 16-Bit) 1.8 V Burst Mode Flash Memory 128 Mb (8M x 16-Bit) 1.8 V CellularRAM Type 2, Burst Mode Data Sheet S98WS256PD0-003 Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

PM12639S-1R2M-RC

Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller model ■ Input/output of DC/DC converters ■ Shielded construction ■ Power supplies for: oH S Features *R ■ Unit height of 3.7 mm ■ Inductance range: 0.67 µH to 1.2 µH ■ Current up to 28 A ■ RoHS compliant*

PM12651S-4R7M-RC

Abstract: PM12651S-9R0M-RC
Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller models ■ Input/output of DC/DC converters ■ Shielded construction ■ Power supplies for: oH S Features *R ■ Unit height of 5.9 mm ■ Inductance range: 0.22 µH to 10 µH ■ Current up to 45 A ■ RoHS compliant*

PM12645S-1R2M-RC

Abstract: PM12651S-4R7M-RC PM12651S-9R0M-RC PM12645S-2R7M-RC
Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller models ■ Input/output of DC/DC converters ■ Shielded construction ■ Power supplies for: oH S Features *R ■ Unit height of 5.9 mm ■ Inductance range: 0.22 µH to 10 µH ■ Current up to 45 A ■ RoHS compliant*

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to