2SC2510
Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)
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2sc251030mhz28mhz150wpep+3-30db001mhz000mhz
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2SC2290
Abstract: 2SC2290A
Contextual Info: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)
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2sc2290a30mhz28mhz60wpep+2-30db2sc2290
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2SC2290
Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
Contextual Info: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)
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2sc229030mhz28mhz60wpep+5-30db001mhz000mhztransistor 2sc22902sc2290 equivalent
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2SC2879
Abstract: 2sc2879 transistor
Contextual Info: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency
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2sc287930mhz28mhz100wpep+4-24db000mhz001mhz2sc2879 transistor
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2SC2510
Abstract: 2SC2510A
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)
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2sc2510a30mhz28mhz150wpep+2-30db2sc2510
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74l00
Abstract: 2SC1764 12ID 1S1555 20ID 80WpeP
Contextual Info: TOSHIBA {D IS CRETE/ OPTO } 909 7 2 5 0 TO SHIBA DE DDDTMtD O I CD IS C R E T E / O P T O SI LICON NPN E P IT A X IA L P L A N A R TYPE Unit in mm 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE) FEATURES : • Specified 28V, 28MHz Characteristics
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30mhz28mhz80wpep-30db+6100ma74l002sc176412id1s155520id
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SF5D14
Abstract: sf5 toshiba SF5B thyristor H 65 TB 16A TOSHIBA THYRISTOR SF5B14
Contextual Info: THYRISTOR SILICON DIFFUSED TYPE MEDIUM power control SF5 B,D,G 14 Unit in mm applications. 01à7MAX. FE A T U R E S : . Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Vd r m Vrr m . Average On-State Current lT(AV)=5A i =xoo~-400V • JEDEC TO-66 Package.
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-400vsf5b14sf5d14sf5g14+7tc-16atb-2313b1asf5 toshibasf5bthyristor h 65 tb 16atoshiba thyristor
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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bce0003ds-167bce0003esec 2sc5088+9samsung uhf/vhf tv tuner2sc5066 datasheetrf bipolar transistortransistor 2sc50662sc5088 secmt6l04aemt4s200tau82mt6l63fs
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2SC2879A
Abstract: 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency
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2sc2879a30mhz28mhz100wpep+5-24db2sc2879 transistor2sc28792sc2879 equivalenttoshiba 2sc2879
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2SC2510
Abstract: 2sc2510 transistor application
Contextual Info: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)
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2sc251030mhz28mhz150wpep+4-30db001mhz000mhz2sc2510 transistor application
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100WPEP
Abstract: 2SC2879 2sc2879 equivalent
Contextual Info: SILICON NPN EPITAXIAL PLAN AR TY P E 2SC2879 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in m m LOW SUPPLY VOLTAGE USE FEATURES : . S p e c i f i e d 1 2 .5 V, : Output Power : Minimum Gain : Efficiency 28MHz Characteristics : P o=100WpEP : Gpe=10dB
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2sc2879-30mhz28mhz100wpep+5150pf022af47/if044/uf2sc2879 equivalent
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jointal Z
Abstract: NIKKEI JOINTAL 200 grease nikkei S-200 nikkei S200 25d13 nikkei jointal nikkei S-200 25D-13 nikkei S-200 grease 10D-13
Contextual Info: 4. HANDLING PRECAUTION When using sem i-conductors, supply o f thermal and/or mechanical stress to devices by improper handling o f them may result in signific ant deterioration in their electric characteristics and/or reliability. This section describes important notes for
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2SC2879
Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency
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2sc2879a30mhz28mhz100wpep+4-24db2sc2879toshiba 2sc28792sc2879 equivalent
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2sc2290
Contextual Info: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)
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2sc2290a30mhz28mhz60wpep+3-30db2-13b1a2sc2290
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2SC2510A
Abstract: 2sc2510 transistor application 2SC2510
Contextual Info: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)
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2sc2510a30mhz28mhz150wpep+3-30db2sc2510 transistor application2sc2510
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toshiba 2sc2879
Abstract: 2sc2879 equivalent
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency
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2sc2879a30mhz28mhz100wpep+4-24db13besentedtoshiba 2sc28792sc2879 equivalent
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2SC2290 equivalent
Abstract: 2SC2290A 2SC2290 60WPEP
Contextual Info: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)
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2sc2290a30mhz28mhz60wpep+3-30db2sc2290 equivalent2sc2290
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2SC2290
Abstract: TRANSISTOR 2sC2290 Linear IC Guide 2-13B1A 2SC22
Contextual Info: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)
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2sc229030mhz28mhz60wpep+7-30db001mhz000mhztransistor 2sc2290linear ic guide2-13b1a2sc22
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2SC2879
Abstract: 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector
Contextual Info: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency
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2sc287930mhz28mhz100wpep+7-24db000mhz001mhz2sc2879 equivalent2sc2879 transistortoshiba 2sc2879dust collector
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2N2222A-PL
Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A
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bfp520ot343rbfg410wbfp405+12bfp420bfp4502n2222a-pl2sc38832sc9018bf7592n3055-divss8050 smd2s-c38832sc945 smdsmd 2n3055bu415a
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