135W Search Results

Contextual Info: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package

13MM

Abstract: transistor Common Base configuration capacitor 50 uf Rogers 6010.5
Contextual Info: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry

Astec Semiconductor

Abstract: AEQ75Y48
Contextual Info: Astec Industry Standard 75 Amps AEQ75Y48 Total Power: Input Voltages: No. of Outputs: 135W 48V Single High Efficiency Quarter Brick Electrical Specs Input Input Range Input Surge Efficiency 36 to 75 VDC 100V /100ms 89% typical Output Output Current Line/Load Regulation

135w

Abstract: Q62702-C2287 MARKING WjS
Contextual Info: BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=47KΩ Type Marking Ordering Code Pin Configuration BCR 135W WJs 1=B Q62702-C2287 Package 2=E 3=C SOT-323

Contextual Info: S IE M E N S BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=10k£2, R2=47K£i Marking Ordering Code Pin Configuration BCR 135W WJs Q62702-C2287 1 =B Package LU II OJ Type

2SK3270-01

Contextual Info: 2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

AEQ75Y48

Abstract: REV01
Contextual Info: Astec Industry Standard 75 Amps AEQ75Y48 Total Power: Input Voltages: No. of Outputs: 135W 48V Single High Efficiency Quarter Brick Electrical Specs Input Input Range Input Surge Efficiency 36 to 75 VDC 100V /100ms 89% typical Output Output Current Line/Load Regulation

Contextual Info: an A M P company Radar Pulsed Power Transistor, 135W, 20jis Pulse, 1% Duty 2.9 - 3.1 GHz PH2931 -135S • • • • • • • • V2.00 suo üfe Features NPN Silicon P ow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ra tio n

VSO05561

Contextual Info: BCR 135W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R 2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 135W WJs Pin Configuration 1=B 2=E Package

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: PH2931-135S
Contextual Info: PH2931-135S Radar Pulsed Power Transistor 135W, 2.9-3.1 GHz, 20µs Pulse, 1% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: Medical Medical Adapter 15W 25W 30W 65W 85W 90W 105W 135W 150W 180W 220W 400W 5V 9V 12V 15V 18V 19V 20V 24V 28V 30V 32V 36V 48V Available or in develpment FSP015 Series Wall Mount Model Watts Output Voltage Output Current Efficiency AC Socket Dimension(mm)

2SK3272-01L

Contextual Info: 2SK3272-01L,S N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

Contextual Info: 2SK3272-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

mosfet 4800

Abstract: MOSFET 100V 2SK3216-01 power mosfet 200A diode k 1140
Contextual Info: 2SK3216-01 N-channel MOS-FET 100V > Features - 25mΩ ±200A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

13MM

Contextual Info: z-s?=‘= .-= - = -M= ZF an AMP company * 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry

2SK3270-01

Contextual Info: 2SK3270-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Contextual Info: Rated 85W Peak 135W SKYNET SNP-Z08 SERIES SNP-Z08 Series 100 Watt Open Frame Power Supply General Purpose Measures: 4.5 x 2.5 x 1.18” Features: ● Only 1.18 inch height ● With ITE & Medical safety ● Efficiency between 81% to 87% ● Operation from 0oC to 70oC by convection

CH2507S

Abstract: lm3931 FBJ3216HS800 MAX1999 QUANTA SSM14 imz2 lm3932 LM393-1 LM393 SOP8
Contextual Info: 5 4 ADP IN 135W D 3 VA_ADP BEAD 2 1 VA_DOCK MOS FOR N.B. VA MAX: 150W N-MOS DIODE CONN. D ADP IN (150W) VA_ADP 3V(4A) & 5V(5A) CONN. SUSON ISOLATE RC DELY SYSTEM'S VA SUSON_PR MOS S0 C V +2.5V V 3VPCU V V +3VSUS V V +3V V 5VPCU V V +5VSUS V V +5V V BUS_PWR

613 MOSFET

Contextual Info: 2SK3270-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±80A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

2SK3218-01

Abstract: MOSFET 150V
Contextual Info: 2SK3218-01 N-channel MOS-FET 150V > Features - 43mΩ ±160A 135W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

LM3886 circuit diagram

Abstract: LM3886 lm3886 application note SNAS091B why we use heat sink compound LM3886 Overture Audio Power Amplifier Series lm3886 output circuit LM388
Contextual Info: LM3886 LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute Literature Number: SNAS091B LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

Contextual Info: 2SK3271-01 N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±100A 155W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier

12V DC to 3 Phase 36V AC INVERTERS

Abstract: 8000w inverter CXA-0384 PAF600F280-28 CXA-L0605-VJL CXA-P1212C-WJL power supply 2000w 24V 50A ipb48004 electronic transformer halogen 12v CXA-0231
Contextual Info: P o w e r P r o d u c t s TDK Corporation of America 1221 Business Center Drive, Mount Prospect, IL 60056 Phone: +1 847 803-6100 Fax: +1 (847) 803-1125 Email: POWER@tdktca.com Visit our website: www.tdk.com O v e r v i e w P o w e r P r o d u c t s O v e r v i e w