1351 TRANSISTOR Search Results

LT1351

Abstract: LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351
Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

1351 NPN TRANSISTOR

Abstract: LT1351 LT1351CMS8 LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Transistor g29
Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

Contextual Info: LT1351 r j u n e TECH NO LO G Y 250|nA, 3MHz, 200V/p.s O p e ra tio n a l A m p lifier F€OTUR€S DCSCRIPTIOfl • 3MHz Gain Bandwidth ■ 200V/jis Slew Rate ■ 250fiA Supply Current ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable

780cb

Abstract: A138-00 1351F
Contextual Info: PDA REFERENCE DESIGN Evaluation Kit Hardware Manual Contents Introduction. 334 Specification.

ST25C

Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Contextual Info: MSB1218A-RT1 Preferred Device PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−70/SOT−323 package which is designed for low power surface

Contextual Info: r r u r LT135.1 m TECHNOLOGY 250|liA, 3MHz, 200V/fis Operational Amplifier F€ATUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/jas Slew Rate ■ 250|oA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor­

Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, OPI150TXV Features • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s

MPSA20 transistor

Abstract: MPS-A20
Contextual Info: Silicon r - - j Ief= I r^ j Transistors M PS-A 20 The MPS-A20 is a silicon planar epitaxial passivated NPN transistor, designed for general purpose am plifier applications. i_ L T J a b s o lu te m a x im u m ratings: VCEO VCBO VEB q SEATING PLANE V olts

Contextual Info: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/|as O p eration al Am plifier F€RTUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/|as Slew Rate ■ 250,uA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate

Contextual Info: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

OP235TX

Abstract: OP235TXV OP804TX OP804TXV OPI150TX OPI150TXV
Contextual Info: 0 P roduct B ulletin OPI150TX Septem ber 1996 OPIEK Optically Coupled Isolators Types OPI15QTX, OPI150TXV • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s

PHC2300

Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
Contextual Info: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221

CBC 184 transistor

Abstract: CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

transistor ac 132

Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019
Contextual Info: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

Contextual Info: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/jas O p e ra tio n a l A m p lifie r F€RTUR€S D C S C R IP TIO n • 3MHz Gain Bandwidth ■ 200V/ijs Slew Rate ■ 250|jA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate

transistor smd 12p

Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
Contextual Info: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band

transistor BC 245

Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time

A3018

Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
Contextual Info: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

Contextual Info: / T L in t A B ^ > 7 LT1351 TECHNOLOGY 250|iA, 3MHz, 200V/^s O p era tional A m plifier FCRTUR6S DCSCAIPTIOn • 3MHz Gain Bandwidth ■ 200V/jos Slew Rate ■ 250|iA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor­

Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL 6N135, 6N136 DATA GaA€As IRDE & PHOTO IC 6N135 DIGITAL LOGIC ISOLATION. U nit in mm LINE RECEIVER. POWER SUPPLY CONTROL 8 SWITCHING POWER SUPPLY ,‘t i 7 rr3 6 5 ti rr 3 4 TRANSISTOR INVERTER. 1 2 The TOSHIBA 6N135 and 6N136 consists of a high em itting diode

2N7222

Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ;n N-CHANNEL IRFM440 SN7SS8 JANTX8N7SS8 JANTXV8N7SSS [REF: MIL-S-10BOO/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International