1350 TRANSISTOR Search Results

1450 transistor

Abstract: 1350 transistor 1314AB60
Contextual Info: R.1.A.052699-PHAN 1314AB60 60 Watts PEP, 25 Volts, Class AB Linear 1350 – 1400 MHz ADVANCED RELEASE GENERAL DESCRIPTION The 1314AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF output power over the band 1350-1400 MHz. This

BC52

Contextual Info: Medium power general purpose transistors NPN medium power general purpose transistors SOT223 SC-73 SOT89 (SC-62) DFN2020-3 (SOT1061) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.0 x 2.0 x 0.65 1350 1350 1100 Package M3D109 Size (mm) Ptot (mW) Polarity NPN VCEO (V)

transistor 1850

Contextual Info: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP

RF POWER TRANSISTOR NPN

Contextual Info: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP

schematic diagram ac 150 kva generator

Abstract: SAMI Star LTV 236 wq Circuit Diagram of Fan Speed Control with potenti ALLEN-BRADLEY POTENTIOMETER 81E intel 8085 microprocessor stromberg 800 kva inverter circuit diagrams SEMICONDUCTORS GENERAL CATALOG TRANSISTORS THYRISTORS DIODES LEDS Diode Thyristor 800 kva inverter diagrams
Contextual Info: Aiien-Bradiey Bulletin 1350 Adjustable Frequency AC Motor Drives by Stromberg Instruction and Maintenance Manual For Bulletin 1350 Non-Regenerative Drive sizes: 50 KVA to 1000 KVA @ 460V AC 58 KVA to 1340 KVA @ 575V AC TABLE OF CONTENTS SECTION LIST OF TITLE

N4050

Abstract: 1350 transistor
Contextual Info: ERICSSON $ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Preliminary Key Features Description • • • • • The 20156 is a class C, NPN, common base RF PowerTransistor intended for 22 VDC operation across the 1350 -1850 MHz frequency band. It is rated at 8 Watts minimum output power

Contextual Info: Model 511065 COAXIAL RESONATOR OSCILLATOR 1350 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Maximum Ratings Voltage Tuning Option Specifications CHARACTERISTIC TYPICAL

Contextual Info: PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: • POUT 8.0 W  Gain 6.0 dB min.  Silicon Nitride Passivated

MSC72166

Abstract: 400X
Contextual Info: MSC72166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC72166 is Designed for High Power Pulsed IFF Avionics Applications. PACKAGE STYLE .400X.500 COMMON BASE MAXIMUM RATINGS IC 40 A VCC 50 V PDISS 1350 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C

MRF157

Contextual Info: MRF157 POWER FIELD EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE .900 2L SQ The ASI MRF157 is an Enhancement-Mode N-Channel MOS designed for linear large-signal output stages to 80 MHz. MAXIMUM RATINGS ID 60 Adc VDSS 125 V VDGO 125 V VGS ±40 V PDISS 1350 W @ TC = 25 °C

5v dpdt relay

Abstract: 10A relay 9 Volt DPDT Relay tyco mil relay relay studs
Contextual Info: 1350 Series AC Voltage Level Sensor, Relay Output Product Facts • ■ ■ Standard models combine AC 400 Hz. voltage-sensing circuit with 2A DPDT output relay. Various applications ■ Motor protection ■ Ground support equipment ■ Low or high line alarms

f541m43b

Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
Contextual Info: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed

TRANSISTOR W25

Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
Contextual Info: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with

Contextual Info: 1350 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

AY-3-1350

Abstract: chime circuit GENERAL INSTRUMENT ay-3-1350 musical door bell musical bell jingle circuit diagram of split ac door bell hallelujah 1760Hz
Contextual Info: AY-3-1350 Tunes Synthesizer FEATURES PIN C O N FIG U R A TIO N • 25 D ifferent Tunes Pius 3 Chimes ■ Mask Program m able w ith C ustom er Specified Tunes fo r Toys, M usical Boxes, etc. ■ M inim al External C om ponents ■ A utom atic S w itch-O ff Signal at End o f Tune fo r Power Savings

SEMICONDUCTOR J598

Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

SEMICONDUCTOR J598

Abstract: j598 ATC800B0R8BT500XT ATC800B J739
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

transistors BC 458

Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

j598

Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies

J717

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S21150HR3 MRF7S21150HSR3 J239 J508 Vishay capacitor axial
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 0, 11/2007 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

philips power transistor bd139

Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd
Contextual Info: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors

Contextual Info: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering