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    SEMICONDUCTOR J598

    Abstract: j598 ATC800B0R8BT500XT ATC800B J739
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    mrf8s21172hmrf8s21172hr3mrf8s21172hsr3semiconductor j598+4j598atc800b0r8bt500xtatc800bj739 PDF

    j598

    Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    mrf8s21172hmrf8s21172hr3mrf8s21172hsr3j598 PDF

    Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    mrf8s21172hmrf8s21172hr3mrf8s21172hsr3 PDF

    SEMICONDUCTOR J598

    Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
    Contextual Info: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original
    mrf8s21172hmrf8s21172hr3mrf8s21172hsr32110-mployees+8semiconductor j598j598j325j280j895j739multicomp capacitoratc800b0r8bt500xt PDF