1316A Search Results

Contextual Info: 1 C B A PART No PGSA-0407A PANEL THICKNESS 0.4-1.0 PANEL HOLE DIA 7 0.1 PGSA-1013A 1-1.5 13 0.1 PGSA-1316A 1-1.4 16 0.1 PGSA-1519A 1-1.5 19 0.1 PGSA-1822A PGSA-2024A1 PGSA-2024A PGSA-2327A 0.8-1.6 0.8-1.2 1-1.6 0.4-1.0 27.1 0.1 PGSA-2529A 0.4-1.1 29 0.1 'A' REF

PGSA-1013A

Abstract: 1316A
Contextual Info: PANEL THKNS. RANGE PART NO. PGSA— 0407A PGSA-1013A PGSA— 1316A PGSA— 1519A PGSA— 1822A PGSA— 2024A1 PGSA— 2024A PGSA— 2327A PGSA— 2529A .01 6— .039 .039— .059 .039— .055 .039— .059 .0 3 1 -.0 6 3 .0 3 1 -.0 3 9 .039— .047 .01 6— .039

XBGA012-W-1316AEL

Abstract: AN30259A
Contextual Info: DATA SHEET Part No. AN30259A Package Code No. XBGA012-W-1316AEL Publication date: May 2012 Ver. AEB 1 AN30259A Contents „ Overview ………………………………………………….………………………………………………………… 3

AN30259A

Abstract: XBGA012-W-1316AEL RESIN molding epoxy resin BGA OUTLINE DRAWING AN3025
Contextual Info: Package Standards 1. Outline Drawing Total pages Page 6 2 Unit:mm Package Code : XBGA012-W-1316AEL Body Materia l : Br/Sb Free Epoxy resin Reroute Material : Cu Bump - - Established Revised : SnAgCu Exclusive use for AN30259A Semiconductor Company, Panasonic Corporation

F16GZ51

Abstract: f16jz51 SF16JZ51 TOSHIBA THYRISTOR
Contextual Info: SF16GZ51, SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51, SF16JZ51 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 16A

F25JZ51

Abstract: F25GZ51 TOSHIBA Thyristor F25JZ51 SF Toshiba Thyristor SF25GZ51 SF25JZ51
Contextual Info: TOSHIBA SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF25GZ51, SF25JZ51 MEDIUM POWER CONTROL APPLICATIONS. • Unit in mm y= 1 5 .8 ± 0 .5 Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V rrm • Average On-State Current ! t A V = 25A

Contextual Info: VBO 13 Single Phase Rectifier Bridge IdAV = 18 A VRRM = 800-1600 V Standard and Avalanche Types VRSM VBRmin V V 900 1300 1230 1500 1430 1700 1630 VRRM Standard V Types 800 VBO 13-08NO2 1200 VBO 13-12NO2 1400 VBO 13-14NO2 1600 VBO 13-16NO2 + Avalanche Types

Contextual Info: 4bûb2Eb DDD1375 flTH « I X Y O 6 Rectifier Bridges, 1~ il ! — w i - -wN — -N - Rectifier Bridges, 1 ~ with DCB-Ceram ic Base V RRM Type K E 72 873 (M) ► New VBO 13-16N02 • VBO 13-14N 02 VBO 13-12N02 VBO 13-08N02 VBO 13-16A 02 • VBO 13-14A 02

B2HKF

Abstract: B2U 250 105-14N 40-08N B2HKF 250 160-14N 22-16 diode 15-16io5 13-12A02 S 4012 R
Contextual Info: ¡bihi; 1~ Rectifier Bridges ! L -w — L -H - 1 ! 1~ Rectifier Bridges with Avalanche Diodes, B2U 1 v vRMS IdAV ^@ T C *FSM V T0 rT ^ th J C 45° C 10 ms A V mQ ‘C 2.5 40 3.0 0.75 3.4 0.85 3.4 2.8 0.7 3.2 0.8 3.4 VBO 13-12A 02 VBO 13-16A 02 1200 1600 400

Contextual Info: TO SH IBA SF16GZ51,SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51, SF16JZ51 M EDIUM PO W ER CONTROL APPLICATIONS. U nit in mm 15.8±0.5 , • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Vd rm \ _ VRRM j • Average On-State C urrent

F25JZ51

Abstract: TOSHIBA Thyristor F25JZ51 F25GZ51
Contextual Info: T O SH IB A SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF25GZ51, SF25JZ51 Unit in mm M EDIUM PO W ER CONTROL APPLICATIONS. 15.8 ± 0.5 • Repetitive Peak Off-State Voltage V d rm \ =400> 600y Repetitive Peak Reverse Voltage V r r m J • Average On-State Current

Contextual Info: TOSHIBA SM 16GZ51,SM 16JZ51 TO SHIBA BI-DIRECTIO NAL TRIODE THYRISTOR SILICON DIFFUSED TYPE SM16GZ51, SM16JZ51 U nit in mm AC POWER CONTROL APPLICATIONS • Repetitive Peak off-State Voltage v DRM = 400> 600 v • R.M.S On-State C urrent rT RMS = 16A •

Contextual Info: TOSHIBA SF16GZ51,SF16JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF16GZ51, SF16JZ51 Unit in mm M EDIUM PO W ER CONTROL APPLICATIONS jt3 .6 i0 .2 15.8 + 0.5 • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Isolation Voltage

Contextual Info: VBO 13 IdAV = 18 A VRRM = 800-1600 V Single Phase Rectifier Bridge Standard and Avalanche Types VRSM VBRmin① VRRM V 900 1300 1500 1700 V V 800 1200 1400 1600 1230 1430 1630 Standard Avalanche Types Types VBO 13-08NO2 VBO 13-12NO2 VBO 13-14NO2 VBO 13-16NO2

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

Contextual Info: VBO 13 IdAV = 18 A VRRM = 800-1600 V Single Phase Rectiier Bridge Standard and Avalanche Types + VRSM VBRmin VRRM Standard Avalanche V V V Types Types 900 800 VBO 13-08NO2 1300 1230 1200 VBO 13-12NO2 VBO 13-12AO2 1700 1630 1600 VBO 13-16NO2 VBO 13-16AO2

M16JZ51

Contextual Info: TOSHIBA SM16GZ51,SM16JZ51 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ51, SM16JZ51 AC POWER CONTROL APPLICATIONS U nit in mm • Repetitive Peak off-State Voltage V D RM = 400, 600V • R.M.S On-State Current lT RMS = 16A • High Commutating (dv / dt)

buz71a

Abstract: A1316-A3 BUZ71 SM 71A diode diode L 2 . 71 sm 71a
Contextual Info: S IE M E N S BUZ 71 BUZ 71 A SIPMOS Power MOS Transistors ^D S = Id = ^ D S o n = • • • • BUZ 71 S2 50 . . 60 V 13 . . 14 A 0.1 . .0 .1 2 N channel Enhancem ent mode A valanche-proof Package: TO -220 A B 1) Type Ordering code BUZ 71 C 67078-S 1 31 6-A 2

tda10046

Abstract: tdm1316al TDM1316AL TUNER tda10046 tuner tuner dtt cofdm dvb MODULATOR 1316AL cofdm dvb chip encoder PR1910 UDA1334
Contextual Info: DTT STB system solution The fastest way to bring complete system solutions to market Philips Semiconductors’ DTT system solution paves the way to a production-ready STB for the low cost free-to-air market. By drastically reducing manufacturers’, OEMs’ and ODMs’

40-12N06

Abstract: VBO 40-08N06 160-12N07 30-14N07 160-16N07 25-16A02 VBO 24 52-08N07 VBO 22-08n08 VBO 20-16N02
Contextual Info: 1~ Rectifier Bridges h ik â \ L -W — i - W - J ! 1~ Rectifier Bridges with Avalanche Diodes, B2U v RRM Type ► New VBO 13-12A02 VBO 13-16A02 VBO VBO VBO VBO 20-12A02 20-16A02 25-12A02 25-16A02 v 1dAV @ T1C vRMS • ^FSM 45°C 10 ms A VT0 rT "^VJM p p thJH

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

74LVC04

Abstract: 74LVC04 Philips 74LVC04D 74LVC04DB
Contextual Info: NAPC/PHILIPS SEMICOND b3E D • bbS3R24 GOÖ3fl7b TT7 « S I C 3 Philips Semiconductors Objective Specification Hex inverter 74LVC04 QUICK REFERENCE DATA FEATURES GND = O V ; T amb = 25°C; tr = t, < 2.5 ns • Wide supply voltage range of 1.2 V to 3.6 V • In accordance with JEDEC

SM2LZ47 equivalent

Abstract: RGK 13/1 TRIAC 13001 S6785G equivalent SF Toshiba Thyristor toshiba thyristor SF SM10LZ47 16A1A TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS SM8LZ47
Contextual Info: Thyristors and Triacs PRODUCT GUIDE 1 Overview Features Thyristors GeneralPurpose Thyristors A variety of non-insulated and insulated thyristors is available. Non-insulated thyristors range from 0.3 A to 10 A and insulated thyristors range from 3 A to 25 A.

F25GZ51

Abstract: sf25gz51
Contextual Info: TOSHIBA SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE Ç F 7 R I7 R 1 Unit in mm MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Isolation Voltage • • !5.8 ±0.5 .