13104 Search Results

Contextual Info: Doc No. TT4-EA-13104 Revision. 4 Product Standards Zener Diode DZ2W02700L DZ2W02700L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ24027 in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5  Excellent rising characteristics of zener current Iz

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

F0501

Abstract: MB85R1002 MB85R1002PFTN
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-1E Memory FRAM CMOS 1 M Bit 64 Kx16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x 16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

MB85R1002

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-3E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

1399G14

Abstract: 1399G19 13506 1399G6 1399g1
Contextual Info: 8 6 7 5 CGC 8/13/98 CMS 8/1/02 1399G6 SHORT SPACERS ECRN 13506 : ADDED 1399G6 .95 24.1 LONG SPACER .05 [1.3] TYP. C .66 16.6 5 UPDATED TO CAD PER ECRN 13104 1 D 4 DATE BY: DESCRIPTION OF CHANGES REV. C 2 ANDERSON POWER PRODUCTS RESERVES THE RIGHT TO ALTER PRODUCT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

PSEUDO SRAM

Abstract: MB85R1002 din 3102
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

cqc0300

Abstract: BFC2 435 mkp339
Contextual Info: MKP339 X2 www.vishay.com Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES • AEC-Q200 qualified • 7.5 mm to 27.5 mm lead pitch. Supplied loose in box, taped on ammopack or reel • Material categorization: For definitions of compliance please see

NTCS0805E3.....T

Abstract: NTCS0805E4474JXT NTCS0805E3T
Contextual Info: 2381 615 1./NTCS0805E4. Vishay BCcomponents Surface Mount, NTC Thermistors FEATURES • TCR from 6 to 2 %/K even at high temperatures • Tolerance on B25/85 down to 1 % • AgPd terminations • Suitable for wave or reflow soldering • Old part number was 2322 615 1.

24CO8

Abstract: a19t transistor 24co4 IC circuit diagram pin configurations of 24co4 1 24co4 S5933QE Sandy Bridge eeprom 24co2 24CO2 CSI 24C04
Contextual Info: A PPLIED M ICRO C IRCUITS C ORPORATION PCI PRODUCTS DATA BOOK For Marketing and Application Information Contact: Please refer to AMCC’s website at www.amcc.com for the latest Device Summary information for the S5920 and S5933 PCI products. Applied Micro Circuits Corporation

Contextual Info: ADS8383 SLAS005C − DECEMBER 2002 − REVISED FEBRUARY 2005 18ĆBIT, 500ĆkHz, UNIPOLAR INPUT, MICROPOWER SAMPLING ANALOGĆTOĆDIGITAL CONVERTER WITH PARALLEL INTERFACE FEATURES D Zero Latency APPLICATIONS D Medical Instruments D Optical Networking D Transducer Interface

ADS8284

Abstract: ADS8318 ADS8319 ADS8327 ADS8328 ADS8380 ADS8382 ADS8482
Contextual Info: ADS8284 www.ti.com. SLAS628 – MARCH 2009 18-BIT, 1-MSPS, PSEUDO-BIPOLAR DIFFERENTIAL SAR ADC WITH ON-CHIP ADC

PtRh10-Pt

Abstract: IEC 584-2 ua 471 T1526 NICR-NIal PtRh30-PtRh6 P0422 n610 P0412 P0425
Contextual Info: Äàò÷èêè òåìïåðàòóðû - KC381 - 3/00 T1526 Òåðìîýëåêòðè÷åñêèå äàò÷èêè òåìïåðàòóðû ñòåðæíåâûå ñ êåðàìè÷åñêîé ïðåäîõðàíèòåëüíîé òðóáêîé Ñ610 • Òåðìîýëåìåíò S, B, K.

M37721S2BFP

Abstract: M5M418160CJ-7 stk 430 130 REL 07 B1-1.0 m37721 M37720s1afp SXX16 M5M418160 MODEL 7720 A1 ba 4916
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

nec V850e2m manual

Abstract: v850E2M architecture v850e2 architecture
Contextual Info: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

70223

Abstract: 30363 bfc2383
Contextual Info: MMKP 383 Vishay BCcomponents AC and Pulse Double Metallized Polypropylene Film Capacitors MMKP Radial Potted Type FEATURES 168x12 halfpage w l h 7.5 mm bent back pitch. 15 to 27.5 mm lead pitch. Low contact resistance. Low loss dielectric. Small dimensions for high density packaging. Supplied

en132400

Abstract: vishay 2222 339 24105
Contextual Info: MKP 339 X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES l 168x12 halfpage l w h 7.5 to 27.5 mm lead pitch. Supplied loose in box, taped on ammopack or reel w h h' F' lt P Ødt e3 Lead (Pb)-free product (1) F

2322 615 13103 vishay

Abstract: NTCS0805E3.....T 473JXT NTCS0805E4474JXT NTCS0805E3T
Contextual Info: 2381 615 1./NTCS0805E4. Vishay BCcomponents Surface Mount, NTC Thermistors FEATURES • TCR from 6 to 2 %/K even at high temperatures • Tolerance on B25/85 down to 1 % • AgPd terminations • Suitable for wave or reflow soldering • Old part number was 2322 615 1.

MC9S12XF512RMV1

Abstract: S12XF temperature controller CHB 401 asea MBT 225 PMF15B6C MC9S12XF256 P112l ifr 2310 Operating Manual ASEA motor b3 freescale superflash
Contextual Info: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512RMV1 Rev.1.20 10-Nov-2010 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most

Ericsson TSR 491 628

Abstract: NT 1307c ericsson TSR 491 641 Ericsson nokia 1600 schematic diagram schematic diagram UPS active power 600 schematic diagram UPS 600 Power free marking code H02 schematic diagram UPS active power 400 tsi620-10gclv
Contextual Info: Tsi620 RapidIO Switch / RapidIO-to-PCI Bridge User Manual Preliminary October 2007 80D7000_MA001_02 Titlepage Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi620, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.

LG E500

Abstract: 4000 CMOS texas instruments 16 PIN PIR controller IC PINOUT JTAG connector Samsung Nexus S NAN transistor TO-66 pic 8259 cable 1747 pic pin outs MPC8560 tsec rgmii configuration adb 634 MPC826* debug register
Contextual Info: MPC8540 PowerQUICC III Integrated Host Processor Reference Manual MPC8540RM Rev. 1 07/2004 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405, Denver, Colorado 80217 1-480-768-2130 800 521-6274

ADS8381

Abstract: ADS8381I ADS8381IB ADS8381IBPFBR ADS8381IBPFBT ADS8381IPFBR ADS8381IPFBT ADS8383 flexible array transducer khz
Contextual Info: ADS8381 SLAS364D − APRIL 2002 − REVISED FEBRUARY 2005 18ĆBIT, 580ĆkHz, UNIPOLAR INPUT, MICRO POWER SAMPLING ANALOGĆTOĆDIGITAL CONVERTER WITH PARALLEL INTERFACE FEATURES D 580-kHz Sample Rate D 18-Bit NMC Ensured Over Temperature D Zero Latency D Low Power: 115 mW at 580 kHz

32473

Abstract: 196DLC Philips 2222 capacitors
Contextual Info: Philips Components Product specification Double layer capacitors 196 DLC FEATURES • Polarized capacitor with high charge density, alternative product to rechargeable backup batteries handbook, 4 columns • Dielectric: electric double layer • Radial leads, cylindrical case,