*E13009F
Abstract: tr 13009 all transistor 13009 transistor 13009 p 13009 13009 NPN Transistor KSE13009FTU 13009 cross reference 13009 13009 TRANSISTOR
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted
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kse13008/13009o-220kse13008kse13009+11o-220fkse13009ftue13009ftr 13009all transistor 13009transistor 13009p 1300913009 npn transistor13009cross reference 1300913009 transistor
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transistor 13009
Abstract: kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 KSE13009
Contextual Info: KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted
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kse13008/13009o-220kse13008kse13009+8kse13009h2kse13009h2tutransistor 13009kse13009 h213009 npn transistor13009 power transistorcross reference 13009transistor switch 13009
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all transistor 13009
Abstract: transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 H 13009 NPN Transistor 13009 silicon
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008
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kse13008/13009o-220kse13008kse13009+10all transistor 13009transistor 130091300913009 transistor equivalent13009 transistortransistor switch 13009npn 1300913009 h13009 npn transistor13009 silicon
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transistor E 13009
Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR 13009 2 transistor D 13009 npn 13009
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Rating Unit VcBO
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kse13008/13009kse13008kse13009transistor e 13009+9all transistor 13009transistor d 13009transistor 13009e 13009 ftransistor en 1300913009 transistor13009 2 transistord 13009npn 13009
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transistor E 13009
Abstract: D 13009 K E13009 transistor 13009 transistor b 595 transistor d 13009 E 13009 L e 13009 f J 13009 - 2 E 13009 2
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Symbol Unit : K S E 1 3008 VcBO
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kse13008/13009kse13009kse13008transistor e 13009+9d 13009 ke13009transistor 13009transistor b 595transistor d 13009e 13009 le 13009 fj 13009 - 2e 13009 2
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e13009
Abstract: transistor 13009 transistor switch 13009 13009 TRANSISTOR 13009 H 13009 NPN Transistor power switching transistor 13009 13009 13009* transistor npn 13009
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : KSE13008 : KSE13009 Rating Unit
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kse13008/13009kse13008kse13009o-220+10e13009transistor 13009transistor switch 1300913009 transistor13009 h13009 npn transistorpower switching transistor 130091300913009* transistornpn 13009
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e 13009 d
Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Contextual Info: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:
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kse13008/13009kse13008kse13009e 13009 d+3transistor e 13009transistor e 13009 le 13009 2
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transistor E 13009
Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008
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kse13008/13009o-220kse13009kse13008+10transistor e 13009transistor d 13009transistor 13009d 13009 k13009 transistore 13009 lp 13009e 13009 fe13009transistor e 13009 l
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D 13009 K
Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
Contextual Info: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:
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500mavcb-10vd 13009 ke 13009 f+8e 13009 2j 13009 - 213009d 13009j 1300913009 hnpn 1300913009 applications
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13009 silicon
Abstract: 13009 TRANSISTOR MJE-13009 transistor 13009 EB 13009 13009 L T 13009 MJE13009 transistor MJE13009
Contextual Info: rZ Z S G S -T H O M S O N * 7# » i» !© « ! M JE 13009 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTVPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec T0-220 plastic package, intended for use in motor controls,
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mje13009t0-220o-220300ns+813009 silicon13009 transistormje-13009transistor 13009eb 1300913009 lt 13009transistor mje13009
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PHE13009
Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The P H E 13009 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,
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E 13009 2
Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use
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as3t31o-220mje13008bb53131+10e 13009 2transistor e 13009eb 13009 de 13009 lp 13009d 13009 ktransistor mjeeb 13009e 13009 dtransistor e 13009 l
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transistor E 13009
Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
Contextual Info: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS
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bfci53t31f-33-13t0-220mje13008+12june1988t-33-13transistor e 13009transistor d 13009d 13009 ke 13009 ltransistor 13009e 13009 fj 13009 - 2tr 13009transistor mje 1300913008 transistor
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transistor 13009
Abstract: transistor E 13009 13009 TRANSISTOR e 13009 f transistor E 13009 2 13009 KSE13009HE13009 d423a e 13009 l HE13009
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13009 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D423AG-00 芯片厚度：240±20µm 管芯尺寸：4230x4230µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2
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100mmd423ag-00kse13009he13009o-220+1310maib12aib10vic125victransistor 13009transistor e 1300913009 transistore 13009 ftransistor e 13009 213009d423ae 13009 lhe13009
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transistor E 13009
Abstract: 13009 H p 13009 13009 L transistor d 13009 all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
Contextual Info: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 1 ■ 2 Switch mode power supplies
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st13009o-220transistor e 1300913009 h+7p 1300913009 ltransistor d 13009all transistor 13009e 13009 le 13009e 13009 f
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transistor E 13009 l
Contextual Info: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 1 ■ 2 3 Switch mode power supplies
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st13009o-220transistor e 13009 l |
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transistor E 13009
Abstract: 13009 H ST13009 e 13009 f ST-13009 13009 l transistor d 13009 13009L E 13009 L p 13009
Contextual Info: ST13009 High voltage fast-switching NPN power transistor Features • Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 1 ■ 2 Switch mode power supplies
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st13009o-220transistor e 1300913009 h+7e 13009 fst-1300913009 ltransistor d 1300913009le 13009 lp 13009
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PC 13003 TRANSISTOR
Abstract: TO126 13003 TRANSISTOR
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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tip42co-220tip127o-126+3bu406apc 13003 transistorto126 13003 transistor
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PC 13003 TRANSISTOR
Abstract: 13009* transistor 13009 PNP Transistor NPN Transistor Pair transistor std 13007 13007* transistor 13007 TRANSISTOR
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistors/IC Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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tip42co-220tran-5000o-126+8bu406apc 13003 transistor13009* transistor13009 pnp transistornpn transistor pairtransistor std 1300713007* transistor13007 transistor
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transistor E 13009
Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10
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2n39032n39042n39052n3906+162n41232n41242n41252n4i262n44002n4401transistor e 13009transistor d 13009e 1300913007 m13007 2 transistor13009 pnp transistorje 13007transistor e 13007p 13009transistor j 13009
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CI 13007
Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
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st24c02ts59c11ts93c46m9306+11m9346ci 13007bud4813005 abux 115bud48a13005 ballastbud98ibuv-481mje-13007buv 471
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transistor MJ 13009
Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
Contextual Info: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching
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hr200202hmje13009ro-247120ns+14collector-emitt120183oc217oc260octransistor mj 13009e13009j 13009 to247e 13009 de 13009d 13009 kmj 1300913009 to-3ptransistor e 13009j 13009
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BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
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ot-23ksc2223ksc2715ksc1623+11ksc1674bd53aksa733ksc1330ksc945bd139bd433 to92kse 13007 lss8050 sot-23kse13009fksp10
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E 13009
Abstract: transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009
Contextual Info: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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he200206hmje13009o-220ab120ns+13183oc217oc260oce 13009transistor mj 13009e13009transistor e 13009mj 13009transistor d 13009d 13009 kj 13009 - 2tr 13009j 13009
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