D 13009 K
Abstract: e 13009 f E 13009 2 J 13009 - 2 13009 D 13009 j 13009 13009 H npn 13009 13009 applications
Contextual Info: TELEFUNKEN ELECTRONIC 1 ?E ]> • a^SOCHb OOO'ifc.M1} 0 TE 13008- TE 13009 T m iilF ty ilfiK lK l e le c tro n ic C rut*« Technotogw* r - 35-13 Silicon NPN Power Transistors Applications: Switching mode power supply, motor control and electronic ballast Features:
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500mavcb-10vd 13009 ke 13009 f+8e 13009 2j 13009 - 213009d 13009j 1300913009 hnpn 1300913009 applications
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transistor E 13009
Abstract: transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L p 13009 e 13009 f e13009 transistor E 13009 l
Contextual Info: KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008
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kse13008/13009o-220kse13009kse13008+10transistor e 13009transistor d 13009transistor 13009d 13009 k13009 transistore 13009 lp 13009e 13009 fe13009transistor e 13009 l
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SC2335
Abstract: SE 130 13007k SC5024 SC5030 E13008 sc536 5027 to-220 se to220 KSC5027
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.3. Switching Transistors 2.3.1 TO-126, TO-220 & T 0 -3 P Type Tran sistors Condition vCE Ic A (V) (A) M IN 4 K SE 130 04 5 2 8 K SE 130 06 5 12 K S E 13008 375 0.5 400 0.5 300 450 500 800 ic Condition hFE Device (NPN) VcEO (V)
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o-126o-220o-220f-220f+10sc2335se 13013007ksc5024sc5030e13008sc5365027 to-220se to220ksc5027
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E 13009 2
Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use
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as3t31o-220mje13008bb53131+10e 13009 2transistor e 13009eb 13009 de 13009 lp 13009d 13009 ktransistor mjeeb 13009e 13009 dtransistor e 13009 l
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transistor E 13009
Abstract: transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR
Contextual Info: i r ^53^31 D O n iS ? 1 D E V EL O P M EN T DATA MJE 13008 MJE 13009 This data she« contains advance information and specifications are subject to change without notice. N AMER P H I L I P S / D I S C R E T E ESE D -r-3 3 -1 3 SILICON DIFFUSED POWER TRAN SISTO RS
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bfci53t31f-33-13t0-220mje13008+12june1988t-33-13transistor e 13009transistor d 13009d 13009 ke 13009 ltransistor 13009e 13009 fj 13009 - 2tr 13009transistor mje 1300913008 transistor
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SR 13009
Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits
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te13008te13009sr 13009e 13009+8e13009transistor sr 13009transistor e 13009d 13009 k13008 transistore 13009 le 13009 fj 13009 - 2
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Contextual Info: 130-08 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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transistor E 13009
Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10
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2n39032n39042n39052n3906+162n41232n41242n41252n4i262n44002n4401transistor e 13009transistor d 13009e 1300913007 m13007 2 transistor13009 pnp transistorje 13007transistor e 13007p 13009transistor j 13009
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BD53A
Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623
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ot-23ksc2223ksc2715ksc1623+11ksc1674bd53aksa733ksc1330ksc945bd139bd433 to92kse 13007 lss8050 sot-23kse13009fksp10
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BUD48
Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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d44q1d44q3d44q5buv27+10bud48bud48dibud 48bux23buv41buv40buw38buw52bux348tr mje 350
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ksd 250v 10a
Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623
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ot-23ksc1623812/kscsa812/ksc+14ksa812/ksc1623ksc1674/ksc1675ksc838/ksc1676ksc945/ksc815ksd 250v 10ab0x34cksd 202ksa 3.3ksc1330ir 733sa992uhf fm 1845 if508afksa733
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ksd 250v 10a
Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715
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ot-23ksc2223ksc2715ksc1674+13ksc1674/ksc167ksc838/ksc167ksd 250v 10aksd 202ksd 18013003 bdksd 250vksd 75bow 94cbdx 44bksd 250v 5ad5072
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transistor E 13009
Abstract: transistor d 13009 n752 E13009 E 13009 J 13009 - 2 E 13009 TRANSISTOR motorola e 13009 p D 13009 K e 13009 l
Contextual Info: MOTOROLA SC XSTRS/R 1 S E 0 I ti3ti725M 0 G Ö 5 4 0 3 F r - MOTOROLA TECHNICAL DATA e s i g n e r s 3 * - / 3 MJE13008 MJE13009 SEMICONDUCTOR D 3 | D a t a . S h e e t 12 A M P E R E NPN SILICON POWER TRANSISTORS 3 0 0 and 4 0 0 V O L T S 100 W A T T S SWITCHMODE SE R IE S
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ti3ti725mmje13008mje13009transistor e 13009+9transistor d 13009n752e13009e 13009j 13009 - 2e 13009 transistor motorolae 13009 pd 13009 ke 13009 l
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transistor D2006
Contextual Info: Ordering number : EN7896D LB8652T LB8652LP Monolithic Digital IC Driver for Digital Still Cameras Features • Actuator driver for digital camera built into one chip no simultaneous drive (1) Saturation output for AF - stepping motor (two-phase, 1 - 2 phases excitation possible)
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en7896dlb8652tlb8652lptransistor d2006 |
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2SC102 transistor
Abstract: 2sc102 2N2902 TK30556 1763-0625 2SC5220 2SC519 2SC520 TK30557 TK30558
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110buy56-4buy56-6buy56-10+13buy72-4buy72-6buy72-102sc102 transistor2sc1022n2902tk305561763-06252sc52202sc5192sc520tk30557tk30558
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2SC102 transistor
Abstract: transistor 2Sc102 2SC102 1763-0625 MM4647 usaf521es071m 10MSA 2SC519 2SC520 TK30557
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110usaf520es070m2n150850m5a+1413on032on0600di2n15092sc102 transistortransistor 2sc1022sc1021763-0625mm4647usaf521es071m10msa2sc5192sc520tk30557
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2sc102
Abstract: 2SC102 transistor T0-63 1763-0625 2sc113 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110bsw88200msa15on0+14bsw89bsx81200m5absx81a2sc1022sc102 transistort0-631763-06252sc1132sc5192sc520tk30556tk30557tk30558
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2SC102 transistor
Abstract: 2N2342 2sc102 TK30556 2N2902 M10A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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2sc102 transistor2n23422sc102tk30556+22n2902m10a
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SC102 transistor
Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om02sc102 transistor2sc102transistor 2sc1021763-0625micro transistor 12032sc5192sc520tk30556tk30557tk30558
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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tfk diodes byw 7613009 jt 43byw 56 equivalenttfk diodes 148+6tfk u 264tfk 804tfk 421diode byw 60diode byt 45 jbyt 45 j
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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2M3055
Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047
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2n30552n37152n37162n3771+162m37722n37912n37922n42342n43982n43992m3055b0w94cmje5202m588613007 hfmj 130082n5337iu 1047tip120 pnpbd908
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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