CI 13007
Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
|
OCR Scan
|
st24c02ts59c11ts93c46m9306+11m9346ci 13007bud4813005 abux 115bud48a13005 ballastbud98ibuv-481mje-13007buv 471
|
PDF
|
mje13005-1
Abstract: 13005 ballast 13007 transistor 13007 ic st24c02 13007 applications 13007 TRANSISTOR TS93C46 ballast with 13005 MJE-13007
Contextual Info: {ZT SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
|
OCR Scan
|
st24c02ts59c11ts93c46m9306+10m9346mje13005-113005 ballast13007transistor 13007ic st24c0213007 applications13007 transistorballast with 13005mje-13007
|
PDF
|
SGSF465
Abstract: SGSF445 sgsf444 SGSF323 mje13005-1 MJE-13007 SGSIF443 transistor 13005 M9306 SGSF424
Contextual Info: {Z T SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
|
OCR Scan
|
st24c02ts59c11ts93c46m9306+14m9346sgsf664sgsf665sgsf663sgsf661sgsf465sgsf445sgsf444sgsf323mje13005-1mje-13007sgsif443transistor 13005sgsf424
|
PDF
|
IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
|
OCR Scan
|
irf 850mje13005-1transistors bu 40713005 a+613005 ballastirf 426irfp 450 application13007 applicationssgsp364irf 810
|
PDF
|
2N5576
Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
|
OCR Scan
|
diff1575op0a580-2405250ksa+15sft2686000n2n2341350kta75om02n5576mt1112n1828mp1537buy28b1700262n18212n25352n2585mp1552a
|
PDF
|
MHT1810
Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0mht18102n18211130032n463mht20082n2585a580-1202a580-1603asz16mp1534
|
PDF
|
High Voltage Bus-bars
Abstract: mj 13007 mj 13008 3790A C37-90 13009T
Contextual Info: Directives & Standards Technical Information EMC Electromagnetic Compatibility EMC General The aim of electromagnetic compatibility considerations is to avoid or minimize the influence of electromagnetic phenomena on a device, equipment or system and on living or
|
Original
|
high voltage bus-barsmj 13007mj 130083790a+2c37-9013009t
|
PDF
|
MP2143
Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0mp2143mp21452n463mp2143amt632n10292n2585asz16mp1534transistor 2sb235
|
PDF
|
EC35-3c8
Abstract: 3843B 13005 TRANSISTOR IC 3843B 4N50 transistor 13005 switching power supply with 3843b Z7156 EC35PCB1 EC35 TRANSFORMER
Contextual Info: TS3842B/3843B High Performance Current Mode Controller Designed for Off-Line and DC-to-DC converter applications. DIP-8 SOP-8 General Description The TS3842B and TS3843B series are high performance fixed frequency current mode controllers. This is specifically designed for Off-Line and DC-to-DC converter applications offering the designer a
|
Original
|
ts3842b/3843bts3842bts3843b54bsc+1310bsc27bsc05bscec35-3c83843b13005 transistoric 3843b4n50transistor 13005switching power supply with 3843bz7156ec35pcb1ec35 transformer
|
PDF
|
transistor TF78
Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0transistor tf78ac178asz16rt150b1130032n21342s8822sa231gft26 transistorat202
|
PDF
|
KL8503
Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0kl8503ck256ck258ck311ck312ck313ck3142sb26km7002ms7 package
|
PDF
|
TI3028
Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0ti3028ti3027ti-30282s52nkt501mp1560ati3029ti3030transistor b1181mp1535a
|
PDF
|
A400M
Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0a400masz162n18411130052n2585mp15342sc232sc242sc4372sc438
|
PDF
|
RT3062
Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0rt3062bly982sc9311768-08152sc10022sc10032sc8072sc830ta62002sc685
|
PDF
|
|
|
AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
|
OCR Scan
|
ad1662sb123 transistor2n1434asz16+1lt5085
|
PDF
|
B170008
Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om0b170008113003b170002b170003b170007a580-04032n2585b170004sdt8111b170005
|
PDF
|
2N2128
Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
|
OCR Scan
|
npn11075op0a580-2405250ksa+10sft2686000n2n2341350kta75om02n2128t4 06602n55772n5579md38
|
PDF
|
2SC102 transistor
Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
|
OCR Scan
|
npn11075op0a580-2405250ksa+15sft2686000n2n2341350kta75om02sc102 transistor2sc102transistor 2sc1021763-0625micro transistor 12032sc5192sc520tk30556tk30557tk30558
|
PDF
|
ZT2015
Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
|
OCR Scan
|
npn11075op0a580-2405250ksa+14sft2686000n2n2341350kta75om0zt2015sdt1000mht8012857ma400mstc10941205tb1700260805t
|
PDF
|
CX20549
Abstract: KB926 MCP67MV MCP67 6690AS MCP67MV- A2 athlon socket AM3 pin diagram G6179-100000 amd sempron pins G6179
Contextual Info: 5 4 3 2 1 Power On Sequence AC IN mode ACIN +5VALW/+3VALW +1.2VALW D EC->MCP67 D EC_RSMRST# (PWRGD_SB) ON_OFF ->EC EC->MCP67 PWRBTN_OUT# (PWRBTN#) MCP67->EC SLP_S5# EC->PWR SYS_ON 10~12ms >0ms +1.8V/+0.9V >0ms C PU6->MCP67 MEM_VLD MCP67->EC SLP_S3#
|
Original
|
mcp67mcp67--pu11--cx20549+8kb926mcp67mv6690asmcp67mv- a2athlon socket am3 pin diagramg6179-100000amd sempron pinsg6179
|
PDF
|
VEB mikroelektronik
Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente
|
OCR Scan
|
veb mikroelektronikdatenblattsammlungsy 625v40511d+6mikroelektronik datenblattsammlungdiode kd 514kd512amikroelektronik berlinhalbleiterwerk frankfurtveb kombinat mikroelektronik erfurt
|
PDF
|
POWER TRANSFORMER E154515
Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Contextual Info: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD
|
Original
|
power transformer e154515scheme e131175sampo e159656foxconn e253117+6e131175xepex e140166sony bando power transformerpower transformer e190246tamradio transformere199273
|
PDF
|
TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
|
OCR Scan
|
38v01transistor tip122 chn 949e2955tbd706+7tu f 1300313003 transistor npn power to 126transistor e2955tconstruction linear amplifier 2sc1945la 43018d679transistor bf 175
|
PDF
|
415v two phase welding machine str CIRCUIT DIAGRAM
Abstract: shell tellus c10 oil toroid international ltd P/N TT63-630 shell tellus c10 oil data sheet 33-20l capacitor
Contextual Info: ELMARK Has been a registered trademark for Europe since the year of 2000 and is part of the international company ELMARK HOLDING SC. Our company is licensed for the manufacture of the full range of professional low-voltage electrical equipment. The Headquarters of ELMARK HOLDING AD are situated in Varna, Bulgaria. There is our logistics center which
|
Original
|
415v two phase welding machine str circuit diagramshell tellus c10 oiltoroid international ltd p/n tt63-630shell tellus c10 oil data sheet+133-20l capacitor
|
PDF
|
