13005 2 Search Results

MJE13004

Abstract: 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130
Contextual Info: MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

13005

Abstract: MJE13005 transistor 13005 MJE-13005 13005 2 MJE13005 2 13005 equivalent equivalent mje13005 transistor mje13005 R3611
Contextual Info: SEMICONDUCTOR MJE13005 MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking K 1 MJE 2 13005 R 3 611 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name MJE MJE13005 13005 2006. 1. 9 3 hFE Grade R 4 Lot No. 611 Revision No : 0

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

mj 13007

Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
Contextual Info: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600

TR 13005 transistor

Abstract: 13005 2 transistor
Contextual Info: KSM13004/13005 TO-220 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

EB 13005

Abstract: transistor 13005 CIRCUIT
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Sym bol : KSE13004 Rating VcBO : KSE13005

transistor 13005 CIRCUIT

Abstract: 13005 2 transistor transistor 13005 13005 TRANSISTOR KSE13005 npn silicon transistor 13005 application note 13005 npn npn silicon transistor 13005 application KSE13004 13005 A
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage : KSE13004

13005 2 transistor

Abstract: EB 13005 e13005 2 13005 TRANSISTOR npn transistor 13005 transistor E 13005 E13005 TRANSISTOR npn e13005 Transistor 13005- 2 transistor d 13005
Contextual Info: NPN SILICON TRANSISTOR KSE13004/13005 HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable lor Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : KSE13004 : KSE13005 Collector Emitter Voltage: KSE13004

transistor 13005

Abstract: npn silicon transistor 13005 application note 13005 ST-13005 A 13005 A 13005 TO-220 13005 2 ST-13005 BR 13005 13005 st
Contextual Info: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

Contextual Info: 13005 ST AN DARD • · TO-220 A Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current DC IC 4 A TA=25 PC 1.5 W TC=25 PC 75 W Junction Temperature TJ 150 Storage Temperature TSTG -55-150 Collector Dissipation

Contextual Info: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

e13009

Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

transistor 13005

Abstract: KSE13005 D283AG-00 transistor E 13005
Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13005 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：D283AG-00 芯片厚度：240±20µm 管芯尺寸：2830x2830µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2

13005 equivalent

Abstract: 13005 mosfet 13005 equivalent internal L5988 74477 L5983 fsw25 C3225 CDRH8D28 L5988D
Contextual Info: L5983 1.5 A step-down switching regulator Features • 1.5 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100 % duty cycle

13005 A

Abstract: transistor 13005 transistor 13005 CIRCUIT 13005 s 13005 13005 TRANSISTOR 13005a 13005 2 transistor CDL13005 13005 power transistor
Contextual Info: CDL13005 TO-220 PLASTIC PACKAGE NPN PLASTIC POWER TRANSISTOR Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation upto Ta=25ºC

13005 2 transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005 TO-220 Plastic Package Used in Energy Saving Lights and Power Switch Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

transistor 13005

Abstract: 13005 transistor d 13005 13005 2 transistor CD13005 13005f 13005 applications CDA marking IC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

13005 2 transistor

Abstract: transistor sr 13005 transistor d 13005 13005 A transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13005 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION

E13005

Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR
Contextual Info: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA