13002 C Search Results

g 13003

Abstract: LM 13003
Contextual Info: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa

PC 13003 TRANSISTOR

Abstract: PC 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR 13002 13003 transistor 13003 13003 TRANSISTOR PC 13003 TRANSISTOR 13003 TRANSISTOR npn
Contextual Info: MJE13002 NPN MJE13003 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13002 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 1.5 Collector current (Pulse)

transistor 13002

Abstract: 13002 npn ST-13002 transistor TO-92 13002 13002 transistor 13002 ST 13002 13002 TO-92 ST13002 13002 power transistor
Contextual Info: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400

X 13003

Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn
Contextual Info: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

3DD13002

Abstract: 06-CL
Contextual Info: TO-251 Plastic-Encapsulate Transistors 3D D 13002 TR A N SISTO R N PN FEATURES Power dissipation TO -2 5 1 Pcm; 1.25W (Tam b=25°C ) C o llecto r current 1 .BASE Icm- 2 .C O LLE C T O R 1A C ollecto r-b ase voltage 3 .E M IT T E R V(BR)CBO: 600 V u O perating and storage ju n ctio n tem perature range

13002 l

Abstract: c s 13002 TRANSISTOR transistor BR 13002
Contextual Info: M C C TO-251 Plastic-Encapsulate Transistors 3D D 13002 TRANSISTOR NPN FE A T U RE S L TO-251 P cm: 1.2 5W (Tam b=25°C ) 1 .B A S E Icm: 1 A 2 .C O L L E C T O R I M M * « * » 'voltage' V(BR)CBO: 600 V 3 . E M IT T E R 1 2 S B fftfcra tin g a n d s to r a g e ju n c t io n te m p e r a tu r e ra n g e

13002

Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

13002 TRANSISTOR

Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor 13002

Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor TO-92 13002

Abstract: 13002 TO-92 transistor x 13002 13002 T CSD 13002 13002 TRANSISTOR transistor 13002 tr 13002 transistor 13002 to-92 13002 TO 92 PACKAGE
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"

transistor w 13002

Abstract: 13002 and power transistor 13002 TRANSISTOR transistor TO-92 13002
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR CSD13002 TO-92 Plastic Package For Lead Free Parts, Devices Part # will be Perfixed with "T"

transistor t114

Abstract: transistor 13002 to-92
Contextual Info: LESHAN RADIO COMPANY, LTD. LR257 AC/DC Current Mode PWM power management controller The LR257 AC—DC is a high efficiency current-mode PWM power supply controller。 It drives an external NPN transistor for high voltage switching. Apply with BiCMOS technology, the

AN57864

Abstract: LUPA-1300-2 AN54468 crc 13002 144x128 FIX32 CHN 234 diode
Contextual Info: CYIL2SM1300AA LUPA 1300-2: High Speed CMOS Image Sensor Features • 1280 x 1024 Active Pixels ■ 14 µm X 14 µm Square Pixels FPN correction enables the sensor to output ready to use image data for most applications. To enable simple and reliable system

0294040.MXJ

Contextual Info: \ DWG. NO. SD-547 13-002 DO NOT SCALE DRAWING EC NO. DRWN: CH'K: APPR: CD EC NO. DRWN: CH'K: APPR: EC NO. DRWN: CH'K: APPR: EC NO. DRWN: CH'K: APPR: RELEASED CD EC NO. JD 2 0 0 0 -0 5 18 DRWN: M.ISOGAYA CH'K: S.ICHIKAWA APPR: H.IKESUGI M. 00 00 O —I m oo

35W amplifiers

Abstract: Xemod "RF Power Amplifiers" QPP-008
Contextual Info: QPP-008 35W, 925-960MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-008 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power

MILL MAX HYDRAULIC OIL 32

Contextual Info: #SH721 Viton Heat Shrink Tubing AMS-DTL-23053/13 (MIL-DTL23053/13 2:1 Shrink Ratio, Fluoroelastomer Tubing Flexible High Temperature Chemical an d Abrasion Resistant Applications Daburn SH721 is a heat shrinkable, flexible, fluoroelastomer sleeving that is used in high

KSB13002AR

Abstract: NPN transistor ECB TO-92 13002 TO 92 PACKAGE
Contextual Info: KSB130 002AR KSB13002AR ◎ SEMIHOW REV.A1,May 2008 KSB130 002AR KSB13002AR High Voltage Switch Mode Application • High Voltage, High Speed Switching • Suitable for Switching regulator, Inverters motor controls Max Operating temperature • 150℃ Max.

CuZn39Pb3

Abstract: R30-3010702 R30-3010802 R30-3010902
Contextual Info: DRAWING No.: Customer Information Sheet R30-30IXX02 SHEET 2 OF 2 | IF IN DOUBT - ASK | I PART No. LI L2 L3 PART No. LI L2 L3 R30-30I0402 4.00 4.0 2.50 R 3 0 - 3 0 I 1602 16.00 12.0 8.00 R30-30I0502 5.00 4.0 3.00 R 3 0 - 3 0 I 1802 18.00 12.0 8.00 R 3 0 -3010602

Contextual Info: VOLTAGE CONTROLLED OSCILLATORS S u rv a c e -M o u n t P ackage OUTPUT POWER 165S TYPICAL HARMONIC SUPPRESSION MHz/Volt TYPICAL PHASE NOISE dBc/Hz O ffset at 10 KHz/100 KHz +2.0 +2.5 +2.0 +2.0 ±2.5 8 -1 5 1 0 -2 0 5 .0 -6 .0 1 2 -2 0 1 0 -2 0 +12 +10 +14

mkp 1.27

Abstract: MKP 422
Contextual Info: MKP 422 Vishay BCcomponents Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications APPLICATIONS Low losses due to low contact resistance and low loss dielectric result in applications where high frequency occur or

BUV93

Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated

Je 243

Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Contextual Info: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp

AP3706

Abstract: ee13 bobbin 13002 tr 13002 APT13003E APT13003 transistor 13002 1N4007 EE16 FR107
Contextual Info: 5V350mA Charger Solution Using AP3706 May. 2008 BCD Semiconductor Manufacturing Limited 2008 All rights reserved Content „ „ „ „ „ „ „ Technical Specification Demo Board Schematic Bill of Material Transformer Specs Demo Board PCB Layout Test Results

13003

Abstract: 13003 application notes 2222 422 12703 transistor 13002 transistor 13003 MKP 422
Contextual Info: MKP 422 Vishay BCcomponents Metallized Polypropylene Filter Film Capacitors MKP Radial Potted Type for Surge Voltage Applications FEATURES 168x12 halfpage 7.5 and 10 mm lead pitch. Supplied loose in box and ammopack. Withstand surge voltages up to 1.5 kV.