1300 LASER DIODE RISE TIME Search Results
1300 LASER DIODE RISE TIME Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54LS298/BEA |
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54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) |
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| 54S153/BEA |
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54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) |
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| 54F257/BEA |
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54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) |
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| 54F257/B2A |
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54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906B2A) |
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| 54F257/BFA |
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54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BFA) |
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1300 LASER DIODE RISE TIME Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LDT-362Contextual Info: LASER DIODE INC IE SBÖSTÖS 00DDM34 S I LAD LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 " T-4T-07 LASER DIODE IN C . 1300nm EDGE EMITTING LED SERIES FEATURES ►High Peak Power ►Fast Rise Time ►Single and Multi mode Fiber Optic Pigtail Options ► Hermetic and Non-Hermetic Packages |
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00DDM34 LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 T-4T-07 1300nm LDT-362 | |
E2000
Abstract: laser 850 nm LED 1310 nm fiber coupled LED Laser International 850 nm LED "Photo Diode" Laser Diode LD Catalog HOD2236-111/BBA
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HOD2236-111/BBA HOD4090-111/BBA 006469-1-E E2000 laser 850 nm LED 1310 nm fiber coupled LED Laser International 850 nm LED "Photo Diode" Laser Diode LD Catalog HOD2236-111/BBA | |
IRE-387-002
Abstract: IRE387-002
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IRE-387-002 IRE-387-003 IRE-491 1300nm IRE387-002 | |
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Contextual Info: Laser Diode Drivers MODEL Power Supply Analog NUMBER Requirements Bandwidth +Vcc +Icc MHz Volts + mA Max Trigger Rate for specs MHz Max Trigger Rate MHz Prop Delay Rising nsec Rise & Fall Time nsec Iout DNL mA Bits max 20 100 40 200 1.6 2.9>5 1.7 2 200 120 |
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AD9660 AD9661A ADN2840 Page-160 | |
LDT-362
Abstract: 12AE6
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LDT-362, LDT-362E LDT-60005, LDT-60005E LDT-60001 1300nm LDT-362 12AE6 | |
2 Wavelength Laser Diode
Abstract: laser DFB 1300 rise
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C-13XX-DFB-RX-SXXXX TA-NWT-000983 C-13XX-DFB-PX-SXXXX/XXX-X OM-D-SP-0022-V2 NumberC-13XX-DFB-PX-SXXXX/XXX-X 2 Wavelength Laser Diode laser DFB 1300 rise | |
850 nm LED
Abstract: LED 1310 nm fiber coupled 1300 nm LED Honeywell DBM 01 E2000 HOD1121-411EBA laser 850 nm Laser Diode LD Catalog
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HOD2294-111/EBA HOD1121-411/EBA 006470-1-E 850 nm LED LED 1310 nm fiber coupled 1300 nm LED Honeywell DBM 01 E2000 HOD1121-411EBA laser 850 nm Laser Diode LD Catalog | |
1300 laser diode rise time
Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
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502CQF OT-184 1300 laser diode rise time Indium Gallium Arsenide Phosphide lasers indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k | |
thermistor 7 romContextual Info: LA S E R DIODE IN C la E D I SBñaTñS 1 GDD0411 • =1 | ■ T - W - o s r _ LCW -1300 SERIES LASER DIODE, INC. 4300nm Multimode Pigtailed Lasers FEATURES ► InGaAsP Buried Crescent Low Threshold Current Hermetically Sealed Package P Extended Operating Temperature Range |
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GDD0411 4300nm 100yum 50mWe thermistor 7 rom | |
2 Wavelength Laser Diode
Abstract: 1300 laser diode rise time laser DFB 1300 rise 90 ps
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C-13XX-DFB2 TA-NWT-000983 OM-D-SP-0009-V2 NumberC-13XX-DFB2 2 Wavelength Laser Diode 1300 laser diode rise time laser DFB 1300 rise 90 ps | |
503CQF
Abstract: Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips
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D00T737 503CQF 503CQF Indium Gallium Arsenide Phosphide lasers 1300 laser diode rise time laser diode philips | |
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Contextual Info: N AMER PHILIPS/DISCRETE fl7D D D E V ELO PM EN T DATA bbS3T31 DDOTTSS 0 • ' T^41-07 This data sheat contains advance Information and specifications are subject to change without notice. 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL |
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bbS3T31 502CQF T-184 | |
diode 1314
Abstract: 1300 laser diode rise time
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51704X 51705X 51704G 1704A STL51705G 1705A Q62702-PXXXX Q62702-PXXXX diode 1314 1300 laser diode rise time | |
diode 1314
Abstract: laser diode 1310 nm fiber coupled The Diode with Package Outlines 1300 laser diode rise time 300 mw IR Laser Diode
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51704X 51705X 51704G Q62702-Pxxxx 1704A 51705G 1705A diode 1314 laser diode 1310 nm fiber coupled The Diode with Package Outlines 1300 laser diode rise time 300 mw IR Laser Diode | |
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Contextual Info: SBH52414x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type • Ternary Photodiode at rear mirror for monitoring and control of radiant power |
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SBH52414x-FSAN D-13623, | |
VDSL splitterContextual Info: SBH52444x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode |
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SBH52444x-FSAN D-13623, VDSL splitter | |
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Contextual Info: SBH52444x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode |
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SBH52444x-FSAN D-13623, | |
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Contextual Info: SBH52454x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm • Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise / high bandwidth PIN diode |
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SBH52454x-FSAN D-13623, | |
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Contextual Info: SBH52414x-FSAN HIGH POWER BIDI Optical Standard Module for ATM-PON ONU Applications 1300 nm Emitting, 1550 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type • Ternary Photodiode at rear mirror for monitoring and control of radiant power |
Original |
SBH52414x-FSAN D-13623, | |
SBL51214G
Abstract: SBL51214N SBL51214Z SBL52214G SBL52214N SBL52214Z "beam splitter"
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SBL52214x D-13623, SBL51214G SBL51214N SBL51214Z SBL52214G SBL52214N SBL52214Z "beam splitter" | |
photodiode 1300nm sensitivity single mode
Abstract: "beam splitter"
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SBL52214x D-13623, photodiode 1300nm sensitivity single mode "beam splitter" | |
SBM52214Contextual Info: SBM52214x MEDIUM POWER BIDI Optical Standard Module 1300 nm Emitting, 1300 nm Receiving Dimensions in mm 1 1mm above TO-bottom connector type Absolute Maximum Ratings Module Operating temperature range at case, TC . –40°C to 85°C Storage temperature range, Tstg . –40°C to 85°C |
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SBM52214x D-13623, SBM52214 | |
SBM51214G
Abstract: SBM51214N SBM51214Z SBM52214G SBM52214N SBM52214Z
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SBM52214x D-13623, SBM51214G SBM51214N SBM51214Z SBM52214G SBM52214N SBM52214Z | |
Power DIODE A30
Abstract: a30 DIODE DIODE A30
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S235bOS 004b5bb Power DIODE A30 a30 DIODE DIODE A30 | |